AGR09070EF

AGR09070EF Introduction 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR09070EF Sym Value Unit The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifier applications. This device is manufactured on an advanced LDMOS technology, offering state-of-the-art performance and reliability. Packaged in an industry-standard package and capable of delivering a minimum output power of 70 W, it is ideally suited for today's wireless base station RF power amplifier applications. R JC 0.80 °C/W Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Drain Current—Continuous Total Dissipation at TC = 25 °C: AGR09070EF Derate Above 25 C: AGR09070EF Operating Junction Temperature Storage Temperature Range Sym Value VDSS 65 VGS –0.5, +15 ID 8.5 PD — TJ 219 1.25 200 Unit Vdc Vdc Adc W W/°C °C TSTG –65, +150 °C Figure 1. AGR09070EF (flanged) Package Features Typical performance ratings for GSM EDGE (f = 941 MHz, POUT = 21 W): — Modulation spectrum: @ ±400 kHz = –60 dBc. @ ±600 kHz = –72 dBc. Typical performance over entire GSM band: — P1dB: 85 W typ. — Power gain: @ P1dB = 18.25 dB. — Efficiency @ P1dB = 56% typ. — Return loss: –12 dB. High-reliability, gold-metalization process. Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. 70 W minimum output power. * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Table 3. ESD Rating* AGR09070EF HBM MM CDM Minimum (V) 500 50 1500 Class 1B A 4 * Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. PEAK Devices Agere employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and JESD22-C101A (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Electrical Characteristics Recommended operating conditions apply unless otherwise specified: TC = 30 °C. Table 4. dc Characteristics Parameter Off Characteristics 200 Drain-source Breakdown Voltage (VGS = 0, ID = 300 µA) Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) Zero Gate Voltage Drain Leakage Current (VDS = 26 V, VGS = 0 V) On Characteristics Forward Transconductance (VDS = 10 V, ID = 1.0 A) Gate Threshold Voltage (VDS = 10 V, ID = 400 µA) Gate Quiescent Voltage (VDS = 26 V, IDQ = 800 mA) Drain-source On-voltage (VGS = 10 V, ID = 1.0 A) Table 5. RF Characteristics Parameter Dynamic Characteristics Reverse Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Power Gain (VDS = 26 V, POUT = 70 W, IDQ = 800 mA) Drain Efficiency (VDS = 26 V, POUT = P1dB, IDQ = 800 mA) EDGE Linearity Characterization2 (POUT = 21 W, f = 941 MHz, VDS = 26 V, IDQ = 800 mA) Modulation Spectrum @ ±400 kHz Modulation Spectrum @ ±600 kHz Output Power (VDS = 26 V, 1 dB gain compression, IDQ = 800 mA) Input VSWR Ruggedness (VDS = 26 V, POUT = 70 W, IDQ = 800 mA, VSWR = 10:1, all angles) 1. Across full GSM band, 921 MHz—960 MHz. 2. Measured according to 3GPP GSM 05.05. Symbol V(BR)DSS IGSS IDSS GFS VGS(TH) VGS(Q) VDS(ON) Min 65 — — — — — — Typ — — — 6 — 3.6 0.12 Max — 2.6 100 8 — 4.8 — — Unit Vdc µAdc µAdc S Vdc Vdc Vdc Symbol CRSS COSS Min — — Typ 2.3 48 Max — — Unit pF pF Functional Tests (in Supplied Test Fixture) Agere Systems Supplied Test Fixture)1 GL 17 50 18.25 56 — — dB % — — P1dB VSWRI — — 70 — –60 –72 85 1:6 — — — — dBc dBc W — No degradation in output power. AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Test Circuit Illustrations for AGR09070EF Z15 VGG FB1 VDD C16 C17 C18 C19 C20 Z9 Z10 Z11 Z12 Z13 C15 Z14 RF OUTPUT C10 C9 C8 C7 C6 R1 Z8 C11 C12 C13 C14 Z1 RF INPUT C1 Z2 Z3 Z4 Z5 C3 Z6 Z7 2 1 DUT 3 PINS: 1. DRAIN 2. GATE 3. SOURCE C2 C4 C5 A. Schematic Parts List: Microstrip line: Z1 0.431 in. x 0.066 in.; Z2 0.327 in. x 0.066 in.; Z3 0.214 in. x 0.066 in.; Z4 0.285 in. x 0.100 in.; Z5 0.510 in. x 0.530 in.; Z6 0.107 in. x 0.530 in.; Z7 0.058 in. x 0.530 in.; Z8 0.455 in. x 0.530 in.; Z9 0.132 in. x 0.530 in.; Z10 0.070 in. x 0.530 in.; Z11 0.535 in. x 0.100 in.; Z12 0.181 in. x 0.100 in.; Z13 0.245 in. x 0.066 in.; Z14 0.315 in. x 0.066 in.; Z15 1.700 in. x 0.050 in. ATC ® chip capacitor: C1, C6, C15, C16: 47 pF 100B470JW500X; C2, 2.2 pF 100B1R2JW500X; C4, C5, C11, C12: 12 pF 100B120JW500X; C7, 22 pF 100B220JW500X; C13, 2.7 pF 100B2R7BW500X; C17, 10 pF 100B100JW500X. Sprague ® tantalum surface-mount chip capacitor: C10, C20 10 µF, 35 V. Kemet® 1206 size chip capacitor: C9, C19: 0.1 µF C1206104K5RAC7800. Murata ® 0805 size chip capacitor: C8, C18: 0.01 µF GRM40X7R103K100AL. Johanson Giga-Trim® variable capacitor: C3, C14: 0.8 pF to 8.0 pF 27271SL. 1206 size chip resistor: R1 51 . Fair-Rite ® ferrite bead: FB1 2743019447. Taconic® ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5. B. Component Layout Figure 2. AGR09070EF Test Circuit AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Preliminary Data Sheet November 2003 Typical Performance Characteristics 0.0 Ð > W A V EL E N GTH S TOW A RD 0.0 0.49 0.48 ± 180 170 U CT IN D 90 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 Ð D< RD L OA TOW A 7 TH S 0.4 -170 EN G V EL WA