AGR09085EF

AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code division multiple access (CDMA), global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and time division multiple access (TDMA) single and multicarrier class AB wireless base station amplifier applications. This device is manufactured on an advanced LDMOS technology offering stateof-the-art performance, reliability, and best-in-class thermal resistance. Packaged in an industry-standard package incorporating internal matching and capable of delivering a minimum output power of 85 W, it is ideally suited for today's RF powe r amplifier applications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR09085EU AGR09085EF Sym Value Unit R JC 0.7 0.7 °C/W Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Drain Current—Continuous Total Dissipation at TC = 25 °C: AGR09085EU AGR09085EF Derate Above 25 C: AGR09085EU AGR09085EF Operating Junction Temperature Storage Temperature Range Sym Value VDSS 65 VGS –0.5, 15 ID 8.5 PD 250 250 1.43 1.43 200 Unit Vdc Vdc Adc W W/°C °C °C YLE 1 TJ 06, STYLE 1 AGR09085EU (unflanged) AGR09085EF (flanged) TSTG –65, 150 Figure 1. Available Packages Features Typical performance ratings are for IS-95 CDMA, pilot, sync, paging, and traffic codes 8—13: — Output power (POUT): 20 W. — Power gain: 18 dB. — Efficiency: 28%. — Adjacent channel power ratio (ACPR) for 30 kHz bandwidth (BW): (750 kHz offset: –45 dBc). 1.98 MHz offset: –60 dBc). — Return loss: 10 dB. High-reliability, gold-metalization process. Best-in-class thermal resistance. Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. Si LDMOS. Industry-standard packages. 85 W minimum output power. * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Table 3. ESD Rating* AGR09085E HBM MM CDM Minimum (V) 500 50 1500 Class 1B A 4 * Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. PEAK Devices Agere employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and JESD22-C101A (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Electrical Characteristics Recommended operating conditions apply unless otherwise specified: TC = 30 °C. Table 4. dc Characteristics Parameter Off Characteristics 200 Drain-source Breakdown Voltage (VGS = 0, ID = 300 µA) Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V) On Characteristics Forward Transconductance (VDS = 10 V, ID = 1 A) Gate Threshold Voltage (VDS = 10 V, ID = 400 µA) Gate Quiescent Voltage (VDS = 28 V, IDQ = 800 mA) Drain-source On-voltage (VGS = 10 V, ID = 1 A) Table 5. RF Characteristics Parameter Dynamic Characteristics Output Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) COSS CRSS — — 48 2.3 — — pF pF Symbol Min Typ Max Unit GFS VGS(TH) VGS(Q) VDS(ON) — — — — 6 — 3.6 0.12 — 4.8 — — S Vdc Vdc Vdc Symbol V(BR)DSS IGSS IDSS Min 65 — — Typ — — — Max — 2.6 100 8 Unit Vdc µAdc µAdc Functional Tests (in Supplied Test Fixture) Agere Systems Supplied Test Fixture) (Test frequencies (f) = 865 MHz, 880 MHz, 895 MHz) Linear Power Gain (VDS = 28 V, POUT = 8 W, IDQ = 800 mA) Output Power (VDS = 28 V, 1 dB compression, IDQ = 800 mA) Drain Efficiency (VDS = 28 V, POUT = P1dB, IDQ = 800 mA) Third-order Intermodulation Distortion (100 kHz spacing, VDS = 28 V, POUT = 90 WPEP, IDQ = 800 mA) Input VSWR Ruggedness (VDS = 28 V, POUT = 85 W, IDQ = 800 mA, f = 880 MHz, VSWR = 10:1, all angles) IM3 VSWRI — GL P1dB 17 85 — — — 18 105 55 30 2:1 — — — — — dB W % dBc — No degradation in output power. AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Test Circuit Illustrations for AGR09085E VGG R4 C25 C24 R3 FB1 C23 C12 C11 R2 C10 C9 C8 Z17 Z11 R1 C15 C13 C14 RF OUTPUT Z12 Z13 Z14 C16 Z15 Z16 C17 C18 C19 C20 C21 C22 C27 VDD Z1 RF INPUT C1 Z2 C2 Z3 Z4 Z5 Z6 Z7 Z8 Z10 Z9 2 1 DUT 3 PINS: 1. DRAIN 2. GATE 3. SOURCE C3 C4 C7 C5 C6 A. Schematic 2 3 1 Parts List: Microstrip line: Z1 0.834 in. x 0.066 in.; Z2 0.665 in. x 0.066 in.; Z3 0.290 in. x 0.066 in.; Z4 0.050 in. x 0.180 in.; Z5 0.650 in. x 0.180 in.; Z6 0.050 in. x 0.800 in.; Z7 0.132 in. x 0.800 in.; Z8 0.105 in. x 0.800 in.; Z9 0.057 in. x 0.800 in.; Z10 0.543 in. x 0.700 in.; Z11 0.108 in. x 0.700 in.; Z12 0.760 in. x 0.180 in.; Z13 0.200 in. x 0.180 in.; Z14 0.470 in. x 0.066 in.; Z15 0.495 in. x 0.066 in.; Z16 1.100 in. x 0.050 in.; Z17 1.100 in. x 0.050 in. ATC ® chip capacitor: C1, C8, C16, C17: 47 pF 100B470JW; C3 2.7 pF 100B2R7BW; C4, C13, C14: 12 pF 100B120JW; C5, C6, C9, C18: 10 pF 100B100JW; C7 5.6 pF 100B5R6BW. 0603 chip capacitor: C10, C19: 220 pF. Kemet® chip capacitor: C11, C26: 0.01 µF C1206C103KRAC7800; C12, C20, C23: 0.1 µF C1206C104KRAC7800. Johanson Giga-Trim® variable capacitor, 27291SL: C2, C15: 0.8 pF to 8 pF. Sprague ® tantalum chip capacitor: C21, C24, C25, C27: 10 µF, 35 V; C22 22 µF, 35 V. 1206 size chip resistor (0.25 W): R1 (fixed film RM73B2B510J) 51 ; R2, (fixed film RM73B2B563J) 56 k ; R3 (fixed film RM73B2B120J) 12 ; R4 (fixed film RM73B2B122J) 1.2 k . Kreger® ferrite bead: FB1 2743D19447. Taconic® ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5. B. Component Layout Figure 2. AGR09085E Test Circuit AGR 09085 E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics 0.11 0.12 0.38 0.13 0.37 0.14 0.36 0.1 50 45 0 .09 0.4 1 0.4 110 0.39 100 0.9 90 1.0 0.15 0.35 80 0.6 60 0.4 12 0 0. 07 13 0. 06 0. 44 5 65 0. 0. 43 0 T CI PA CA I A PT CE US ES V Yo) jB/ E (+ NC 0.7 2 0.2 70 0.0 0.4 75 EN T (+ j X/ Z ,O o) R 14 5 0.4 0 5 0.0 6 15 0 CE CO M 0.4 PO N 0.6 4 0.0 Ð > W A V EL E N GTH S TOW A RD 0.0 0.49 GEN ERA 0.48 ± 180 TO 170 RÐ 0.4 > 7 160 90 80 0.8 RE AC TA N 1. 0 85 U CT IVE IN D 0.1 0.9 1.0 1.2 0.2 0.5 0.6 0.7 0.8 1.4 1.8 0.3 0.4 Z0 = 5 Ω L OA D < Ð RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo) 0.2 0.49 D OW A R HST N GT -170 EL E 0.1 -90 f1 o) jB/ Y E (NC 0.4 0.48 -160 -85 f3 ZS 0.6 0. 8 1. 0 0.2 WA V MHz (f) 865 (f1) 880 (f2) 895 (f3) ZL Ω ZS Ω (Complex Source Impedance) (Complex Optimum Load Impedance) 0.35 – j0.73 1.66 + j1.22 0.35 – j0.77 1.67 + j1.18 0.33 – j0.82 1.69 + j1.14 GATE (2) ZS DRAIN (1) ZL SOURCE (3) INPUT MATCH TA 7 DUT OUTPUT MATCH Figure 3. Series Equivalent Input and Output Impedances 1.6 Agere Systems Inc. 2.0 0.4 f3 0.6 ZL 0. 8 f1 1. 0 1.4 0.2 8 0.0 0.8 1.2 40 70 55 35 0. 4 0.3 0.2 0.1 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) 0 -10 -20 ACPR (dBc) S -30 ACP+ -40 -50 -60 -70 0.00 ALT1+ ALT5.00 10.00 15.00 20.00 25.00 30.00 35.00 ACP- POUT (W)S TEST CONDITIONS: VDD = 28 Vdc, IDQ = 0.8 A, TC = 30 °C. FREQUENCY = 880 MHz; IS-95 CDMA PILOT, PAGING, SYNC, TRAFFIC CODES 8 THROUGH 13; OFFSET 1 = 750 kHz; OFFSET 2 = 1.98 MHz; OFFSET 1 AND 2 BW = 30 kHz. Figure 4. ACPR vs. POUT 19 18 0 POWER GAIN (dB) a 17 16 15 14 13 12 11 10 860 POWER GAIN POUT = 100 W POUT = 10 W -4 -6 -8 RETURN LOSS -10 -12 -14 -16 865 870 875 880 885 890 895 -18 900 FREQUENCY (MHz)A TEST CONDITIONS: VDD = 28 Vdc, IDQ = 0.8 A, TC = 30 °C, WAVEFORM = CW. Figure 5. Power Gain and Return Loss vs. Frequency INPUT RETURN LOSS (dB) -2 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) 20 18 880 MHz POWER 865 MHz 895 MHz POWER GAIN (dB) dB 16 14 12 10 8 6 4 2 0 0.00 20.00 40.00 60.00 80.00 100.00 POUT (W)Z 120.00 140.00 160.00 TEST CONDITIONS: VDD = 28 Vdc, IDQ = 0.8 A, TC = 30 °C, WAVEFORM = CW. Figure 6. Power Gain vs. Power Out 160 140 120 POUT (W) Z 100 865 MHz 880 MHz POUT 895 MHz 90 80 70 60 50 865 MHz EFFICIENCY 40 30 20 3.50 DRAIN EFFICIENCY (%)Z 100 80 60 40 20 0 0.00 0.50 1.00 1.50 2.00 2.50 3.00 PIN (W)Z TEST CONDITIONS: VDD = 28 Vdc, IDQ = 0.8 A, TC = 30 °C, WAVEFORM = CW. Figure 7. Power Out and Drain Efficiency vs. Input Power AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) 0.00 -10.00 -20.00 IMD (dBc)Z -30.00 IM5+/-40.00 -50.00 -60.00 0.00 IM3+/- IM7+/- 20.00 40.00 60.00 80.00 100.00 120.00 140.00 160.00 POUT (WPEP)Z TEST CONDITIONS: VDD = 28 Vdc, IDQ = 0.8 A, TC = 30 °C. FREQUENCY 1 = 880.0 MHz; FREQUENCY 2 = 880.1 MHz. Figure 8. 2-Tone IMD vs. POUT AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Package Dimensions All dimensions are in inches. Tolerances are ±0.005 in. unless specified. AGR09085EU PINS: 1. DRAIN 2. GATE 3. SOURCE 1 PEAK DEVICES AGR09085EU XXXX 1 3 2 3 2 AGR09085EF PINS: 1. DRAIN 2. GATE 3. SOURCE 1 PEAK DEVICES AGR09085EF XXXX 1 3 2 3 2 XXXX - 4 Digit Trace Code