AGR18045E

AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifier applications. This device is manufactured using advanced LDMOS technology offering state-of-the-art performance and reliability. It is packaged in an industrystandard package and is capable of delivering a minimum output power of 45 W, which makes it ideally suited for today’s RF power amplifier applications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case Sym Rı JC Value 1.5 Unit °C/W Table 2. Absolute Maximum Ratings* Parameter Sym Value Drain-source Voltage VDSS 65 Gate-source Voltage VGS –0.5, 15 Drain Current Continuous ID Total Dissipation at TC = 25 °C PD 115 Derate Above 25 ° C — 0.67 Operating Junction TemperaTJ 200 ture Storage Temperature Range TSTG –65, 150 Unit Vdc Vdc Adc W W/°C °C °C Figure 1. Available (flanged) Package Features Typical performance ratings for GSM EDGE (f = 1.840 GHz, POUT = 15 W) — Error vector magnitude (EVM): 1.9% — Power gain: 15 dB — Drain efficiency: 32% — Modulation spectrum: @ ±400 kHz = –63 dBc. @ ±600 kHz = –73 dBc. Typical continuous wave (CW) performance over entire digital communication system (DCS) band: — P1dB: 49 W typical (typ). — Power gain: @ P1dB = 14 dB. — Efficiency: @ P1dB = 53% typ. — Return loss: –12 dB. High-reliability, gold-metallization process. Low hot carrier injection (HCI) induced bias drift over 20 years. Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. 45 W minimum output power. Device can withstand 10:1 voltage standing wave ratio (VSWR) at 26 Vdc, 1.840 GHz, 45 W CW output power. Large signal impedance parameters available. * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Table 3. ESD Rating* AGR18045E HBM MM CDM Minimum (V) 500 50 1500 Class 1B A 4 * Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. PEAK Devices Agere employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and JESD22-C101A (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Electrical Characteristics Recommended operating conditions apply unless otherwise specified: TC = 30 °C. Table 4. dc Characteristics Parameter Off Characteristics Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) = 38 Drain-source Breakdown Voltage (VGS = 0 V, ID = 200 µA) V(BR)DSS IGSS IDSS GFS 65 — — — 3.8 — — — — — 3.2 — — 1.5 75 4 — — µAdc Vdc Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 26 V, VGS = 0 V) On Characteristics Gate Threshold Voltage (VDS = 10 V, ID = 150 µA) Drain-source On-voltage (VGS = 10 V, ID = 0.5 A) Forward Transconductance (VDS = 10 V, ID = 0.4 A) µAdc S Gate Quiescent Voltage (VDS = 26 V, ID = 400 mA) Table 5. RF Characteristics Parameter Drain-to-gate Capacitance (VDS = 26 V, VGS = 0 V, f = 1 MHz) Drain-to-source Capacitance (VDS = 26 V, VGS = 0 V, f = 1 MHz) VGS(TH) VDS(ON) VGS(Q) 4.8 — — 0.22 Vdc Vdc Vdc Symbol Dynamic Characteristics CRSS COSS Min — — Typ 1.0 24 Max — — Un i t pF pF EDGE Linearity Characterization (POUT = 15 W, f = 1.840 GHz, VDS = 26 V, IDQ = 400 mA) Modulation spectrum @ ±400 kHz Modulation spectrum @ ±600 kHz Drain Efficiency (VDS = 26 V, POUT = 15 W, IDQ = 400 mA) Power Gain (VDS = 26 V, POUT = 15 W, IDQ = 400 mA) (in Agere Systems Supplied Test Fixture) Functional Tests* (in Supplied Test Fixture) GL η — 15 32 — — dB % — — P1dB IRL ψ — — –63 –73 49 — — — — dBc dBc W Input Return Loss Output Power (VDS = 26 V, 1 dB gain compression, IDQ = 400 mA) Ruggedness (VDS = 26 V, POUT = 45 W, IDQ = 400 mA, VSWR = 10:1 [all angles]) No degradation in output power. — –12 dB * Across full DCS band, 1.805 GHz—1.880 GHz. AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Test Circuit Illustrations for AGR18045E R1 VGG C5 C4 Z1 RF INPUT C1 Z2 FB1 C3 Z3 Z12 Z11 Z4 2 1 3 Z5 DUT Z6 Z7 Z8 Z9 C2 Z10 RF OUTPUT PINS: 1. DRAIN, 2. SOURCE, 3. GATE VDD C6 C7 C8 C9 C10 A. Schematic J3 C5 FB1 C4 R1 C3 C6 C7 C9 C8 C10 J1 J2 C1 C2 Parts List: ? Microstrip line: Z1 0.840 in. x 0.066 in.; Z2 0.598 in. x 0.066 in.: Z3 0.135 in. x 0.866 in.; Z4 0.175 in. x 0.866 in.; Z5 0.148 in. x 0.650 in.; Z6 0.212 in. x 0.650 in.; Z7 0.190 in. x 0.320 in.; Z8 0.200 in. x 0.140 in.; Z9 0.253 in. x 0.066 in.; Z10 0.745 in. x 0.066 in.; Z11 0.050 in. x 0.820 in.; Z12 0.050 in. x 0.950 in. ® ? ATC chip capacitors: C1: 20 pF, 600F200JT250; C2: 10 pF, 100B100JW500; C3, C6: 8.2 pF, 600F8R2CT250. ® ? Murata chip capacitors: C4, C7: 0.047 µF, LLL317R71H473KD01L; C8: 0.01 µF, GRM216R71H103KA01; C9: 0.1 µF, GRM21BR71H104KA01. ® ? Sprague tantalum surface-mount chip capacitors: C9, C10: 22 µF, 35 V, T495X226KO3SAS. ® ? Vishay 1206 size chip resistor: R1: 4.7 kΩ, CRCW12064R75F100. ® ? Amphenol connectors: J1, J2: 901-10019. ® ? WECO connector: J3: 140-A-524-SMD/6. ® ? Fair-Rite ferrite bead: FB1: 2743019447. ® ? Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, εr = 3.5. B. Component Layout Figure 2. AGR18045E Test Circuit AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Typical Performance Characteristics 0.0 Ð > W A V EL E N GTH S TOW A RD 0.0 0.49 0.48 ± 180 170 U CT 0.6 Z0 = 4 Ω IN D 90 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.6 1.8 1.4 2.0 3.0 4.0 5.0 10 20 D< RD L OA TOW A 7 TH S 0.4 -170 EN G V EL WA