AGR19090EU

AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz— 1990 MHz), wide-band code division multiple access (W-CDMA), global system for mobile communication (GSM/EDGE), time-division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications. GSM Features Typical performance over entire GSM band: — P1dB: 90 W typical. — Continuous wave (CW) power gain: @ P1dB = 14.0 dB. — CW Efficiency @ P1dB = 50% typical. — Return loss: –12 dB. Device Performance Features High-reliability, gold-metalization process. Low hot carrier injection (HCI) induced bias drift over 20 years. AGR19090EU (unflanged) AGR19090EF (flanged) Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. Device can withstand 10:1 voltage standing wave ratio (VSWR) at 28 Vdc, 1930 MHz, 90 W CW output power. Large signal impedance parameters available. Figure 1. Available Packages N-CDMA Features Typical 2 carrier N-CDMA performance: VDD = 28 V, IDQ = 850 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz, IS-95 CDMA (pilot, sync, paging, traffic codes 8—13). Peak/average (P/A) = 9.72 dB at 0.01% probability on CCDF. 1.2288 MHz transmission bandwidth (BW). Adjacent channel power ratio (ACPR) measured over 30 kHz BW at f1 – 885 kHz and f2 + 885 kHz. Third-order intermodulation (IM3) distortion measured over a 1.2288 MHz BW at f1 – 2.5 MHz and f2 + 2.5 MHz. — Output power (POUT): 18 W. — Power gain: 15.0 dB. — Efficiency: 25.8%. — IM3: –34.5 dBc. — ACPR: –50 dBc. ESD Rating* AGR19090E HBM MM CDM Minimum (V) 500 50 1500 Class 1B A 4 EDGE Features Typical EDGE performance (1960 MHz, 26 V, IDQ = 800 mA): — Output power (POUT): 36 W. — Power gain: 15.0 dB. — Efficiency: 38%. — Modulation spectrum: @ ±400 kHz = –61.0 dBc. @ ±600 kHz = –73.0 dBc. — Error vector magnitude (EVM) = 2.2%. * Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. PEAK Devices Agere employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and JESD22-C101A (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. AGR 19090 E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Electrical Characteristics Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR19090EU AGR19090EF Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 °C: AGR19090EU AGR19090EF Derate Above 25 °C: AGR19090EU AGR19090EF Operating Junction Temperature Storage Temperature Range Symbol VDSS VGS PD PD — — TJ Value 65 –0.5, 15 230 230 1.33 1.33 200 –65, 150 Unit Vdc Vdc W W W/°C W/°C °C °C Symbol RθJC RθJC Value 0.75 0.75 Unit °C/W °C/W TSTG * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Recommended operating conditions apply unless otherwise specified: TC = 30 °C. Table 3. dc Characteristics Off Characteristics 130 Drain-source Breakdown Voltage (VGS = 0 V, ID = 300 µA) Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V) On Characteristics Forward Transconductance (VDS = 10 V, ID = 0.67 A) Gate Threshold Voltage (VDS = 10 V, ID = 270 µA) Gate Quiescent Voltage (VDS = 28 V, ID = 800 mA) Drain-source On-voltage (VGS = 10 V, ID = 0.67 A) Parameter Symbol V(BR)DSS IGSS IDSS GFS VGS(th) VGS(Q) VDS(on) Min 65 — — — — — — Typ — — — 6.0 — 3.7 0.08 Max — 2.7 150 8 — 4.8 — — Un i t Vdc µAdc µAdc S Vdc Vdc Vdc AG R190 90E 90 W, 1930 MHz —1990 MHz, PCS LDMOS RF Power Transistor Electrical Characteristics (continued) Recommended operating conditions apply unless otherwise specified: TC = 30 °C. Table 4. RF Characteristics Parameter Dynamic Characteristics Symbol Min Typ Max Unit CRSS — 2.0 — pF Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) (Part is internally matched both on input and output.) (in Agere Systems Supplied Test Fixture) Functional Tests (in Supplied Test Fixture) GPS 14.5 15.5 — dB Common-source Amplifier Power Gain (VDD = 28 Vdc, POUT = 18 W average, 2-Carrier N-CDMA, IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) Drain Efficiency η — 25.8 — % (VDD = 28 Vdc, POUT = 18 W average, 2-Carrier N-CDMA, IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) Third-order Intermodulation Distortion IM3 — –34.5 — dBc (VDD = 28 Vdc, POUT = 18 W average, 2-Carrier N-CDMA, IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; IM3 measured in a 1.2288 MHz integration BW centered at f1 – 2.5 MHz and f2 + 2.5 MHz, referenced to the carrier channel power) ACPR — –50 — dBc Adjacent Channel Power Ratio (VDD = 28 Vdc, POUT = 18 W average, 2-Carrier N-CDMA, IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; ACPR measured in a 1.2288 MHz integration BW centered at f1 – 2.5 MHz and f2 + 2.5 MHz, referenced to the carrier channel power) IRL — –12 — dB Input Return Loss (VDD = 28 Vdc, POUT = 18 W average, 2-Carrier N-CDMA, IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) Output Power at 1 dB Gain Compression P1dB 90 95 — W (VDD = 28 V, POUT = 90 W CW, f = 1990 MHz, IDQ = 800 mA) Ruggedness Ψ No degradation in output (VDD = 28 V, POUT = 90 W CW, IDQ = 800 mA, f = 1930 MHz, power. VSWR = 10:1 [all phase angles]) AGR 19090 E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Test Circuit Illustrations for AGR19090E R2 VGG R3 R4 FB1 C9 Z8 2 C11 C17 C12 C13 C14 C16 C15 Z9 Z10 C16 Z11 C2 Z12 RF OUTPUT VDD + C7 Z13 Z7 Z14 1 3 DUT C10 C3 C4 C5 Z1 RF INPUT C8 Z2 C1 Z3 Z4 Z5 Z6 PINS: 1. DRAIN, 2. GATE, 3. SOURCE A. Schematic B. Component Layout Parts List: ? Microstrip line: Z1 0.390 in. x 0.065 in.; Z2 0.300 in. x 0.065 in.; Z3 0.070 in. x 0.065 in.; Z4 0.400 in. x 0.260 in.; Z5 0.100 in. x 0.540 in.; Z6 0.160 in. x 0.770 in.; Z7 0.275 in. x 1.160 in.; Z8 0.550 in. x 1.130 in.; Z9 0.300 in. x 0.205 in.; Z10 0.120 in. x 0.065 in.; Z11 0.165 in. x 0.065 in.; Z12 0.555 in. x 0.065 in.; Z13 0.185 in. x 0.030 in.; Z14 0.845 in. x 0.050 in. ® ? ATC B case chip capacitors: C1, C2, 10 pF, 100B100JCA500X; C7, C11, 8.2 pF, 100B8R2CA500X. ® ? Sprague tantalum SMT: C9, C10, C15 22 µF, 35 V. ® ? Kemet : B case chip capacitors: C3, C14 0.10 µF, CDR33BX104AKWS; tantalum capacitor: C16, 1 µF, 50 V T491C. ® ? Vitramon 1206: C5, C12: 22000 pF. ® ? Murata : 0805: C4, C13 0.01 µF, GRM40X7R103K100AL. ? 0603: C12 220 pF. ® ? Johanson Giga-Trim variable capacitors: C8, C18 0.4 pF—2.5 pF. ? Fixed film chip resistors (0.25 W, 0.08 x 0.13): R2 4.7 Ω; R3 1.02 kΩ; R4 560 kΩ. ® ? Fair-Rite ferrite bead: FB1: 2743019447. ® ? Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, εr = 3.5. Figure 2. AGR19090E Test Circuit AG R190 90E 90 W, 1930 MHz —1990 MHz, PCS LDMOS RF Power Transistor Typical Performance Characteristics 0.0 Ð > W A V EL E 0.49 N GTH S TOW A RD 0.48 0.0 D