AGR21090EF

AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor (LDMOS) RF power transistor suitable for wideband code-division multiple access (W-CDMA), and single and multicarrier class AB wireless base station power amplifier applications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR21090EU AGR21090EF Sym Rı JC Rı JC Value 0.7 0.7 Unit °C/W °C/W Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 °C: AGR21090EU AGR21090EF Derate Above 25 ˇ C: AGR21090EU AGR21090EF CW RF Input Power (VDS = 31 V) Operating Junction Temperature Storage Temperature Range Sym Value Unit 65 Vdc VDSS VGS –0.5, 15 Vdc PD PD — — — TJ 250 250 1.4 1.4 30 200 W W W/°C W/°C W °C °C AGR21090EU (unflanged) AGR21090EF (flanged) Figure 1. Available Packages Features Typical performance for 2 carrier 3GPP W-CDMA systems. F1 = 2135 MHz and F2 = 2145 MHz with 3.84 MHz channel BW, adjacent channel BW = 3.84 MHz at F1 – 5 MHz and F2 + 5 MHz. Third-order distortion is measured over 3.84 MHz BW at F1 – 10 MHz and F2 + 10 MHz. Typical P/A ratio of 8.5 dB at 0.01% (probability) CCDF: — Output power: 19 W. — Power gain: 14.5 dB. — Efficiency: 26%. — IM3: –33 dBc. — ACPR: –36 dBc. — Return loss: –12 dB. High-reliability, gold-metalization process. Low hot carrier injection (HCI) induced bias drift over 20 years. Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. Device can withstand a 10:1 voltage standing wave ratio (VSWR) at 28 Vdc, 2140 MHz, 90 W continuous wave (CW) output power. Large signal impedance parameters available. TSTG –65, 150 * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Table 3. ESD Rating* AGR21090E HBM MM CDM Minimum (V) 500 50 1500 Class 1B A 4 * Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. PEAK Devices Agere employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and JESD22-C101A (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Electrical Characteristics Recommended operating conditions apply unless otherwise specified: TC = 30 °C. Table 4. dc Characteristics Parameter Off Characteristics Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) 100 Drain-source Breakdown Voltage (VGS = 0, ID = 300 µA) V(BR)DSS IGSS IDSS GFS 65 — — — — — — 6.4 3 150 9 — — µAdc µAdc S Vdc Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V) On Characteristics Forward Transconductance (VDS = 10 V, ID = 1 A) Gate Threshold Voltage (VDS = 10 V, ID = 300 µA) Drain-source On-voltage (VGS = 10 V, ID = 1 A) Gate Quiescent Voltage (VDS = 28 V, ID = 800 mA) VGS(TH) VDS(ON) VGS(Q) 2.8 3.0 — 3.4 3.7 4.8 4.6 — Vdc Vdc Vdc 0.11 Table 5. RF Characteristics Parameter Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) (This part is internally matched on both the input and output.) Common-source Amplifier Power Gain* Symbol Dynamic Characteristics CRSS — 2.1 — pF Min Typ Max Unit Functional Tests (in Supplied Test Fixture) Agere Systems Supplied Test Fixture) Drain Efficiency* GPS η IM3 ACPR IRL 14.0 24 — 14.5 –33 –36 –12 93 26 — — dB dBc dBc dB W % Third-order Intermodulation Distortion* (IM3 distortion measured over 3.84 MHz BW @ f1 – 10 MHz and f2 + 10 MHz) Adjacent Channel Power Ratio* (ACPR measured over BW of 3.84 MHz @ f1 – 5 MHz and f2 + 5 MHz) –32 –35 –9 — — — Input Return Loss* Power Output, 1 dB Compression Point (VDD = 28 V, fC = 2140.0 MHz) P1dB ψ 85 Output Mismatch Stress (VDD = 28 V, POUT = 90 W (CW), IDQ = 800 mA, fC = 2140.0 MHz VSWR = 10:1; [all phase angles]) No degradation in output power. * 3GPP W-CDMA, typical P/A ratio of 8.5 dB at 0.01% CCDF, f1 = 2135 MHz, and f2 = 2145 MHz. VDD = 28 Vdc, IDQ = 800 mA, and POUT = 19 W average. Nominal operating voltage 28 Vdc. Qualified for a maximum operating voltage of 32 Vdc ±0.5 V. AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Test Circuit Illustrations for AGR21090E FB1 VGG R3 R4 + C4 C5 C3 + C2 Z6 R2 Z7 Z9 2 Z10 Z8 DUT C13 C14 C15 C16 C17 C7 Z11 C8 C9 Z12 C18 + C10 C11 Z14 + VDD Z13 C6 RF OUTPUT PINS: 1. DRAIN 2. GATE 3. SOURCE Z1 RF INPUT C1 Z2 C19 Z3 Z4 Z5 1 3 A. Schematic Parts List: � Microstrip line: Z1 0.889 in. x 0.065 in.; Z2 0.370 in. x 0.065 in.; Z3 0.160 in. x 0.250 in.; Z4 0.080 in. x 0.400 in.; Z5 0.195 in. x 1.000 in.; Z6 0.050 in. x 0.860 in.; Z7 0.050 in. x 0.880 in.; Z8 0.050 in. x 0.880 in.; Z9 0.180 in. x 1.060 in.; Z10 0.110 in. x 1.060 in.; Z11 0.260 in. x 1.060 in. x 0.065 in. taper; Z12 0.195 x 0.065 in.; Z13 0.395 in. x 0.065 in.; Z14 0.555 in. x 0.065 in. ® � ATC chip capacitor: C1, C6: 8.2 pF 100B8R2JW500X; C2, C7, C13: 6.8 pF 100B6R8JW500X. ® � Sprague tantalum surface-mount chip capacitor: C3, C5, C11, C17: 22 µF, 35 V. ® � Kemet 1206 size chip capacitor: C10, C16: 0.1 µF C1206104K5RAC7800. ® � Murata 0805 size chip capacitor: C9, C15: 0.01 µF GRM40X7R103K100AL. ® � Johanson Giga-Trim variable capacitor: C18, C19: 0.4 pF to 2.5 pF 27281SL. � 1206 size chip capacitor: C4, C8, C14: 22000 pF. � 1206 size chip resistor: R2 4.7 Ω, R3 1.02 kΩ, R4 560 kΩ. ® � Fair-Rite ferrite bead: FB1 2743019447. ® � Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, εr = 3.5. B. Component Layout Figure 2. AGR21090E Test Circuit AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics 0.0 Ð > W A V EL E N GTH S TOW A RD 0.0 0.49 0.48 ± 180 170 U CT 0.6 Z0 = 5 Ω IN D 90 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 10 20 Ð D< RD L OA TOW A 7 TH S 0.4 -170 EN G V EL WA