AH322-S8PCB1960

AH322 2W High Linearity InGaP HBT Amplifier Product Features • 400 – 2700 MHz • +33 dBm P1dB • +50 dBm Output IP3 • 13.4 dB Gain @ 2140 MHz • 500 mA Quiescent Current • +5 V Single Supply • MTTF > 100 Years • Lead-free/RoHS-compliant SOIC-8 Package Product Description The AH322 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance for various narrowbandtuned application circuits with up to +50 OIP3 and +33 dBm of compressed 1dB power. It is housed in a leadfree/RoHS-compliant SOIC-8 package. All devices are 100% RF and DC tested. The AH322 is targeted for use as a driver amplifier in wireless infrastructure where high linearity and medium power is required. The AH322 is ideal for the final stage of small repeaters or as driver stages for high power amplifiers. In addition, the amplifier can be used for a wide variety of other applications within the 400 to 2700 MHz frequency band. Functional Diagram 1 8 2 3 7 6 4 5 Applications • • • • Final stage amplifiers for Repeaters High Power Amplifiers Mobile Infrastructure LTE / WCDMA / EDGE / CDMA Function Iref Input Output / Vcc Vbias GND GND Pin No. 8 3 6, 7 1 Backside Paddle 2, 4, 5 Specifications (1) Parameter Operational Bandwidth Test Frequency Gain Input R.L. Output R.L. Output P1dB Output IP3 (2) WCDMA Channel Power (3) @ -50 dBc ACLR Typical Performance Units Min MHz MHz dB dB dB dBm dBm dBm dB V mA mA 400 2140 13.4 14.7 7.8 +33 +50 +24.1 4.8 +5 500 30 Typ Max 2700 Parameter Frequency Gain Input Return Loss Output Return Loss WCDMA Channel Power (3) @ -50 dBc ACLR Units MHz dB dB dB dBm dBm dBm dB V mA mA 940 19.4 18 8.5 +23.6 +33.0 +47.6 8.5 Typical 1960 14.1 11.3 11.8 +24.4 +33.3 +50.2 4.5 +5 30 500 2140 13.4 14.7 7.8 +24.1 +33 +50 4.8 Noise Figure Vcc, Vbias Quiescent Collector Current (4) Iref Output P1dB Output IP3 (2) Noise Figure Vcc, Vbias Iref Quiescent Collector Current 600 500 1. Test conditions unless otherwise noted: 25ºC, +5V Vsupply, 2140 MHz, in tuned application circuit. 2. 3OIP measured with two tones at an output power of +21 dBm / tone separated by 1 MHz, 940 MHz. OIP3 measured with two tones at an output power of +24 dBm / tone separated by 1 MHz, 1960 MHz and 2140 MHz respectively. The suppression on the largest IM3 product is used to calculate the OIP3 using a 2:1 rule. 3. 3GPP WCDMA, TM1+64DPCH, ±5 MHz Offset, no clipping, PAR = 10.2 dB @ 0.01% Probability. 4. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6 and 7. Absolute Maximum Rating Parameter Storage Temperature RF Input Power, CW, 50 , T = 25ºC Device Voltage, Vcc, Vbias Device Current Device Power Thermal Resistance, Rth Junction Temperature, Tj Rating -65 to +150 °C Input P10 dB +8 V 1400 mA 8W 18.6 °C / W +200 °C Ordering Information Part No. AH322-S8G AH322-S8PCB900 AH322-S8PCB1960 AH322-S8PCB2140 Description 2W High Linearity InGaP HBT Amplifier (lead-free/RoHS-compliant SOIC-8 Pkg) 920 - 960 MHz Evaluation Board 1930 - 1990 MHz Evaluation Board 2110 - 2170 MHz Evaluation Board . Operation of this device above any of these parameters may cause permanent damage. Standard T/R size = 1000 pieces on a 7” reel. TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: info-sales@tqs.com • W eb site: www.TriQuint.com April 2009 AH322 2W High Linearity InGaP HBT Amplifier Typical Device Data S-Parameters (Vcc = +5 V, Icq = 500 mA, T = 25 °C, calibrated to device leads) 1.0 1.0 6 0. 0. 6 45 0. 4 0. 8 0. 8 Gain and Maximum Stable Gain 40 35 30 25 20 15 10 5 0 -5 0 0.5 1 1.5 2 Frequency (GHz) 2.5 3 2.14 GHz 7.19 dB 2.14 GHz 22.7 dB 0 S11 Swp Max 4GHz 2. 0 S22 Swp Max 4GHz 2. 0 0 3. 10 .0 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0 . -0 -0 .0 -2 -0 -0 .6 .6 -0 .8 -0 .8 . -2 0 Swp Min 0.01GHz Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in pink color, [DB (S (2, 1)]. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the blue line [DB (GMAX)]. The impedance plots are shown from 0.01 – 4 GHz, with markers placed in 0.5 GHz increments. S-Parameters (Vcc = +5 V, Icq = 500 mA, T = 25 °C, unmatched 50 ohm system, calibrated to device leads) Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) 50 -0.74 -174.58 29.75 109.51 -43.47 25.51 100 -0.53 -179.31 24.21 98.59 -43.22 17.83 200 -0.45 176.71 18.46 89.55 -42.49 8.135 400 -0.44 170.07 12.77 80.82 -42.04 5.31 600 -0.56 163.11 9.78 73.71 -41.41 10.52 700 -0.61 159.9 8.73 69.49 -41.21 11.31 800 -0.64 156.03 7.94 65.68 -40.26 12.5 1000 -0.78 147.66 6.8 56.95 -39.65 7.88 1200 -0.87 138.49 6.11 46.99 -38.34 2.45 1400 -1.08 128.32 5.8 36.79 -37.99 -3.1 1600 -1.4 117.39 5.83 25.05 -37.52 -14.57 1800 -1.94 106.19 6.17 10.83 -37.39 -27.07 2000 -3.2 95.9 6.8 -7.89 -37.45 -42.22 2200 -5.84 94.01 7.36 -33.75 -38.56 -69.38 2400 -6.52 112.96 6.5 -64.88 -41.93 -115.31 2600 -4.45 121.06 4.77 -92.83 -41.83 167.17 2800 -2.44 117.78 2.24 -121.06 -38.13 103.07 3000 -1.26 108.49 -1.12 -142.85 -34.99 62.15 S22 (dB) -1.15 -1.22 -1.19 -1.22 -1.18 -1.12 -1.17 -1.22 -1.26 -1.33 -1.49 -1.46 -1.41 -1.21 -0.9 -0.4 -0.27 -0.35 -1.0 -1.0 S22 (ang) -135.3 -157.31 -170.3 -178.39 176.07 173.93 171.69 166.82 162.15 157.29 152.31 147.31 143.05 138.4 133.24 126.56 119.41 112.36 Application Circuit PC Board Layout Circuit Board Material: Top RF layer is .014” Getek, єr = 4.0, 4 total layers (0.062” thick) for mechanical rigidity 1 oz copper, Microstrip line details: width = .026”, spacing = .026” The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning shunt capacitors – C8, C5 and C2. The markers and vias are spaced in .050” increments. TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: info-sales@tqs.com • W eb site: www.TriQuint.com -3 4 .4 -4 .0 -5 .0 .0 -4 .0 -5 . 0 2 -0 . .2 -0 Swp Min 0.01GHz -10.0 0. 2 2.14 GHz r 0.493722 x 0.825153 4. 0 0 5. 0. 4 -1 0.0 -3 .0 DB(MSG()) De_emebedded S_parameter DB(|S(2,1)|) De_emebedded S_parameter 3. 0 0 4. 2.14 GHz r 0.0838672 x 0.36526 5. 0 0. 2 10 .0 . April 2009 AH322 2W High Linearity InGaP HBT Amplifier 824 - 894 MHz Application Circuit Typical RF Performance at 25 °C Frequency (MHz) Gain Input Return Loss Output Return Loss Output P1dB Channel Power (1) (@-55 dBc IS-95 CDMA ACPR) units dB dB dB dBm dBm dBm dBm mA V V 824 19.7 16 7 +33.0 +24.4 +23.7 +46.2 848 19.7 16 8 +33 +24.4 +23.7 +46.3 600 +5 +5 894 19.7 13 12 +32.6 +23.8 +23 +45.1 Channel Power Output IP3 (3) (2) (@ -50 dBc WCDMA ACLR) (21 dBm / tone, 1MHz spacing) Quiescent Current, Icq Vpd (4) Vcc Notes: 1. ACPR test set-up: IS-95 CDMA, 9 channels fwd, ±750 KHz offset, 30 KHz, Meas BW, PAR = 9.7 dB @ 0.01% Prob. 2. ACLR test set-up: 3GPP WCDMA, TM1±64 DPCH, ±5MHz offset no clipping, PAR = 10.34 dB @ 0.01% Probability. 3. OIP3 is measured at 21 dBm / tone output power with 1 MHz spacing. 4. Vpd is used as device power down voltage (low = RF off). 5. The edge of L2 is placed at 265 mils from edge of AH322 RFout pin (12 º @ 850 MHz). 6. The edge of C2 is placed at 250 mils from edge of AH322 RFout pin (11 º @ 850 MHz). 7. The edge of C8 is placed at 25 mils from edge of AH322 RFout pin (1 º @ 850 MHz). 8. Do not exceed +5.5V supply or TVS diode D3 will be damaged. 9. Zero ohm jumpers may be replaced with copper traces in the target application layout. 10. DNP implies Do Not Place. C8 L2 C5 Small Signal Performance 20 19 G ain (d B) 18 17 16 15 800 0 -5 Re tu rn L o ss (d B ) -10 -15 -20 -25 900 ACLR (dBc) -30 -35 ACLR vs. Output Power 3GPP WCDMA, TM1+64DPCH, ±5MHz offset Freq., PAR = 10.34 % @ Prob. 824 MHz 848 MHz 894 MHz -40 -45 -50 -55 -60 20 21 22 23 24 Output Power (dBm) 25 26 Gain S11 S22 820 840 860 Frequency (MHz) 880 ACPR vs. Output Power IS-95 CDMA, 9 CH. Fwd., ±750 KHz offset frequency, PAR = 9.7 dB @ 0.01 % Prob. OIP3 vs. Output Power 1MHz spacing, 25C -40 -45 ACPR (dBc) -50 -55 -60 -65 -70 20 21 22 23 24 Output Power (dBm) 25 26 824 MHz 848 MHz 894 MHz 50 47 OIP3 (dBm ) 44 41 824 MHz 848 MHz 894 MHz 38 35 18 19 20 21 22 23 24 Output Power / tone (dBm) 25 26 . TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: info-sales@tqs.com • W eb site: www.TriQuint.com April 2009 AH322 2W High Linearity InGaP HBT Amplifier 920 - 960 MHz Application Circuit (AH322-S8PCB900) Typical RF Performance at 25 °C Frequency (MHz) Gain Input Return Loss Output Return Loss Output P1dB Channel Power (1) (@-55 dBc IS-95 CDMA ACPR) units dB dB dB dBm dBm dBm dBm dB mA V V 920 19.2 16.6 7.8 +33 +24.3 +23.5 +47.3 8.2 940 19.4 18 8.5 +33 +24.4 +23.6 +47.6 8.5 600 +5 +5 960 19.2 15.3 9.4 +33 +24.3 +23.5 +47.2 9 Channel Power (2) (@ -50 dBc WCDMA ACLR) Output IP3 (3) (21 dBm / tone, 1MHz spacing) Noise Figure Quiescent Current, Icq Vpd (4) Vcc Notes: 1. ACPR test set-up: IS-95 CDMA, 9 channels fwd, ±885 KHz offset, 30 KHz, Meas BW, PAR = 9.7 dB @ 0.01% Prob. 2. ACLR test set-up: 3GPP WCDMA, TM1±64 DPCH, ±5MHz offset no clipping, PAR = 10.34 dB @ 0.01% Probability. 3. OIP3 is measured at 21 dBm / tone output power with 1 MHz spacing. 4. Vpd is used as device power down voltage (low = RF off). 5. The edge of L2 is placed at 380 mils from the edge of AH322 RFout pin (19 º @ 940 MHz) 6. The edge of C2 is placed at 190 mils from the edge of AH322 RFout pin (9.5 º @ 940 MHz). 7. Do not exceed +5.5V supply or TVS diode D3 will be damaged. 8. 0 jumpers may be replaced with copper traces in the target application layout. 9. DNP implies Do Not Place. Small Signal Performance 25 C C8 L2 C5 ACLR vs. Channel Power 3GPP WCDMA, TM1±64DPCH, ±5MHz Offset, 940 MHz ACLR vs. Channel Power 3GPP WCDMA, TM1±64DPCH, ±5MHz Offset, 25C 20 19 G ain (d B ) 18 S21 S11 S22 0 -5 R etu rn L o ss (dB ) -10 -15 -20 -25 960 -30 -35 ACLR (dB m ) -40 -45 -50 -55 -60 17 18 19 20 21 22 23 24 25 Output Channel Power (dBm) 26 27 +25C -40C +85C -30 -35 ACLR (dBc) -40 -45 -50 -55 -60 17 18 19 20 21 22 23 24 25 Output Channel Power (dBm) 26 27 920 MHz 940 MHz 960 MHz 17 16 15 920 930 940 Frequency (MHz) 950 ACPR vs. Channel Power IS-95CDMA, 9 Ch. Fwd, ±885 KHz Offset, 30 KHz Meas BW, 940 MHz ACPR vs. Channel Power IS-95CDMA, 9 Ch. Fwd, ±885 KHz Offset, 30 KHz Meas BW, 25C Gain vs. Pout vs. Temp Freq. = 940 MHz -40 -45 -50 ACPR (dBc) -55 -60 -65 -70 -75 -80 17 18 19 20 21 22 23 24 25 26 27 Output Channel Power (dBm) +25C -40C +85C -40 -45 -50 ACPR (dBc) -55 -60 -65 -70 -75 -80 17 18 19 20 21 22 23 24 25 26 27 Output Channel Power (dBm) 920 MHz 940 MHz 960 MHz 21 20 G a in (d B ) 19 18 17 25C -40C +85C 16 15 27 28 29 30 31 Pout (dBm) 32 33 34 . TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: info-sales@tqs.com • W eb site: www.TriQuint.com April 2009 AH322 2W High Linearity InGaP HBT Amplifier Performance Plots for AH322-S8PCB900 contd. OIP3 vs. Channel Power Freq. = 940, 941 MHz, 1MHz spacing OIP3 vs. Channel Power 1 MHz spacing, 25 C Noise Figure vs. Frequency 25C 55 55 10 8 6 4 2 OIP3 (dbm ) OIP3 (dB m ) 50 50 N F (d B) 920 MHz 940 MHz 960 MHz 45 25C -40C 85C 45 40 40 35 16 17 18 19 20 21 Output Power / Tone (dBm) 22 23 35 16 17 18 19 20 21 22 Output Power / Tone (dBm) 23 0 920 930 940 Frequency (MHz) 950 960 . TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: info-sales@tqs.com • W eb site: www.TriQuint.com April 2009 AH322 2W High Linearity InGaP HBT Amplifier 1930 - 1990 MHz Application Circuit (AH322-S8PCB1960) Typical RF Performance at 25 °C Frequency (MHz) Gain Input Return Loss Output Return Loss Output P1dB Channel Power (1) (@ -50 dBc WCDMA ACLR) units dB dB dB dBm dBm dBm dB mA V V 1930 13.8 11.8 9 +33.2 +23.9 +47.2 1960 14.1 11.3 11.8 +33.3 +24.4 +50.2 4.5 500 +5 +5 1990 14.2 10.8 15.4 +33.1 +23.7 +46.7 Output IP3 (2) (24 dBm / tone, 1MHz spacing) Noise Figure Quiescent Current, Icq Vpd (4) Vcc Notes: 1. ACLR test set-up: 3GPP WCDMA, TM1±64 DPCH, ±5MHz offset no clipping, PAR = 10.34 dB @ 0.01% Probability. 2. OIP3 is measured at 24 dBm / tone output power with 1 MHz spacing. 3. The multilayer inductor L3 (82nH) is critical for linearity performance. 4. Vpd is used as device power down voltage (low = RF off). 5. The edge of C5 is placed at 247 mils from the edge of AH322 RFout pin (11 º @ 1960 MHz). 6. Do not exceed +5.5V supply or TVS diode D3 will be damaged. 7. 0 jumpers may be replaced with copper traces in the target application layout. 8. DNP implies Do Not Place. C8 C5 Small Signal Performance 25 C ACLR vs. Channel Power 3GPP WCDMA, TM1±64DPCH, ±5MHz Offset, 1960 MHz ACLR vs. Output Power 3GPP WCDMA, TM1±64DPCH, ±5MHz Offset, 25C 15 14 G a in (d B ) 13 12 S21 S11 S22 0 -5 R e tu rn L o s s (d B ) -10 -15 -20 -25 1990 -35 -40 A C LR (dB c) -45 -50 -55 -60 -65 20 21 22 23 24 25 26 Output Channel Power (dBm) 27 +25C -40C +85C -35 1930 MHz 1960 MHz 1990 MHz -40 ACLR (dBc) -45 -50 -55 -60 -65 20 21 22 23 24 25 26 Output Channel Power (dBm) 27 11 10 1930 1940 1950 1960 1970 Frequency (MHz) 1980 Gain vs. Pout vs. Temp Frequency = 1960 MHz OIP3 vs. Output Power 1 MHz spacing, 1960 MHz OIP3 vs Channel Power 1 MHz spacing, 25C 16 15 55 55 50 OIP3 (dBm ) O IP 3 (dBm ) 50 G ain (dB) 14 13 12 +25C -40C +85C 45 +25C -40C +85C 45 40 40 1930 MHz 1960 MHz 1990 MHz 11 10 27 28 29 30 31 Pout (dBm) 32 33 34 35 20 21 22 23 24 25 26 Output Power / Tone (dBm) 27 35 20 21 22 23 24 25 Output Power / Tone (dBm) 26 27 . TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: info-sales@tqs.com • W eb site: www.TriQuint.com April 2009 AH322 2W High Linearity InGaP HBT Amplifier 2110 - 2170 MHz Application Circuit (AH322-S8PCB2140) Typical RF Performance at 25 °C Frequency (MHz) Gain Input Return Loss Output Return Loss Output P1dB Channel Power (1) (@ -50 dBc WCDMA ACLR) units dB dB dB dBm dBm dBm dB mA V V 2110 13.1 15 6.3 +24.1 +50.1 4.7 2140 13.4 14.7 7.8 +33 +24.1 +50 4.8 500 +5 +5 2170 13.6 14.2 10 +23.8 +48.4 4.7 Output IP3 (2) (24 dBm / tone, 1MHz spacing) Noise Figure Quiescent Current, Icq Vpd (4) Vcc Notes: 1. ACLR test set-up: 3GPP WCDMA, TM1±64 DPCH, ±5MHz offset no clipping, PAR = 10.34 dB @ 0.01% Probability. 2. OIP3 is measured at 24 dBm / tone output power with 1 MHz spacing. 3. The multilayer inductor L3 (82 nH) is critical for linearity performance.. 4. Vpd is used as device power down voltage (low = RF off). 5. The edge of C5 is placed at 195 mils from the edge of AH322 RFout pin (22 º @ 2140 MHz). 6. The edge of C8 is placed at 0.5 mils from the edge of AH322 RFout pin (0 º @ 2140 MHz). 7. Zero ohm jumpers may be replaced with copper traces in the target application layout. 8. DNP means Do Not Place. Small Signal Performance 25C C8 C5 ACLR vs. Channel Power 0 -5 -10 -15 3GPP WCDMA, TM1±64DPCH, ±5MHz Offset, 2140 MHz ACLR vs. Channel Power -35 -40 3GPP WCDMA, TM1±64DPCH, ±5MHz Offset, 25C 14 13 S 2 1 (d B ) 12 11 10 9 2110 S21 S11 S22 -35 2110 MHz 2140 MHz 2170 MHz R e tu rn L o s s (d B ) AC LR (dB c) -40 -45 -50 -55 -60 -65 20 21 +25C -40C +85C ACLR (dBc) -45 -50 -55 -60 -65 -20 -25 2170 2120 2130 2140 2150 Frequency (MHz) Frequency = 2140 MHz 2160 22 23 24 25 26 Output Channel Power (dBm) 27 20 21 22 23 24 25 26 Output Channel Power (dBm) 27 Gain vs. Pout vs. Temp 15 14 50 OIP3 (dBm) 55 OIP3 vs. Output Power 1 MHz spacing, 25C OIP3 vs Channel Power 1 MHz spacing, 25C 55 50 OIP3 (dBm ) G ain (dB ) 13 12 11 +25C -40C +85C 45 2110 MHz 2140 MHz 2170 MHz 45 +25C -40C +85C 40 40 10 9 27 28 29 30 31 Pout (dBm) 32 33 34 35 19 20 21 22 23 24 25 Output Power / Tone (dBm) 26 27 35 19 20 21 22 23 24 25 Output Power / Tone (dBm) 26 27 . TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: info-sales@tqs.com • W eb site: www.TriQuint.com April 2009 AH322 2W High Linearity InGaP HBT Amplifier Mechanical Information This package is lead-free/green/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum 260 °C reflow temperature) and lead (maximum 245 °C reflow temperature) soldering processes. Outline Drawing Product Marking The component will be marked with an “AH322G” designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the “Application Notes” section. ESD / MSL Information ESD Rating: Value: Test: Standard: ESD Rating: Value: Test: Standard: Class 1A Passes ≥ 250V to < 500V Human Body Model (HBM) JEDEC Standard JESD22-A114 Class III Passes ≥ 1000V min. Charged Device Model (CDM) JEDEC Standard JESD22-C101 MSL Rating: Level 3 at +260 °C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Configuration / Land Pattern Functional Diagram 1 8 2 3 7 6 4 5 Mounting Config. Notes 1. A heatsink underneath the area of the PCB for the mounted device is strictly required for proper thermal operation. Damage to the device can occur without the use of one. 2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated thru diameter of .25 mm (.010”). 3. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 4. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contact the heatsink. 5. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 6. RF trace width depends upon the PC board material and construction. 7. Use 1 oz. Copper minimum. 8. All dimensions are in millimeters (inches). Angles are in degrees. Function Iref Input Output / Vcc Vbias GND GND Pin No. 8 3 6, 7 1 Backside Paddle 2, 4, 5 . TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: info-sales@tqs.com • W eb site: www.TriQuint.com April 2009