AH420-EG

AH420 • 400 – 2700 MHz • +35.7 dBm P1dB 4W High Linearity InGaP HBT Amplifier Product Features Product Description The AH420 is a high dynamic range amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance with -49 dBc ACLR and +35.7 dBm of compressed 1dB power, operating off of a single +5V supply. It is housed in a lead-free/green/RoHScompliant 4x5mm DFN package. All devices are 100% RF and DC tested. Functional Diagram • -49 dBc ACLR @ 26 dBm • 14 dB Gain @ 2140 MHz • 800 mA Quiescent Current • +5 V Single Supply • MTTF > 100 Years The AH420 is targeted for use as a final stage amplifier in wireless infrastructure repeaters or as driver stages for high • Lead-free/green/RoHS-compliant power amplifiers where high performance is required. In addition, the amplifier can be used for a wide variety of 12-pin 4x5mm DFN Package other applications within the 400 to 2700 MHz frequency band. By operating off of a single +5V rail, other higher voltage rails are not necessarily needed thus saving system Applications costs. The amplifier also has the flexibility to operate at • Final stage amplifiers for Repeaters higher voltage levels to achieve higher compression if needed by the system. Function RFIN RFOUT IREF VBIAS NC Pin No. 3,4,5,6 7,8,9,10 12 1 2,11 • High Power Amplifiers • Mobile Infrastructure • LTE / WCDMA / EDGE / CDMA Specifications Parameter Operational Bandwidth Test Frequency Output Channel Power Gain Input Return Loss Output Return Loss ACPR (2) Output P1dB Output IP3 (4) Quiescent Collector Current (3) Iref Vcc, Vbias Typical Performance Units Min MHz MHz dBm dB dB dB dBc dBm dBm mA mA V 400 2140 +26 14 12 7.4 -49 +35.7 +50 800 20 +5 Typ Max 2700 Parameter Frequency Channel Power Gain Input Return Loss Output Return Loss ACPR (2) Output P1dB Noise Figure Output IP3 (4) Quiescent Collector Current (3) Iref Vcc, Vbias Units MHz dBm dB dB dB dBc dBm dB dBm mA mA V 940 +27 16 14 6.4 -46.5 +35.2 6.6 +50 Typical 1960 +27 14.1 19 7 -48 +35.6 5.3 +49 800 20 +5 2140 +26 14 12 7.4 -49 +35.7 5.6 +50 13 16 710 900 1. Test conditions unless otherwise noted: 25ºC, +5V Vsupply, 2140 MHz, in tuned application circuit. 2. W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.2 dB @ 0.01% Probability, 3.84 MHz BW 3. This corresponds to the quiescent current under small-signal conditions into pins 6, 7, and 8 when the current setting resistor, R4 connected to the Iref pin, is at 82 Ω. 4. OIP3 is measured with two tones at out an output power of +27 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 5. The amplifier has been tested for ruggedness to be capable of handling: 10:1 VSWR @ 5Vcc, 2140MHz, +35.2dBm CW Pout, 25 °C 10:1 VSWR @ 5Vcc, 940MHz, +28.5dBm IS-95A Pout, 25 °C 10:1 VSWR @ 5Vcc, 2140MHz, +26.5dBm WCDMA Pout, 25 °C Absolute Maximum Ratings Parameter Storage Temperature Vcc, Vbias RF Input Power, CW, 50 Ω, T=25°C Reference Current, Iref Dissipated Power, Pmax Max Junction Temperature, TJ For 106 hours MTTF -65 to +150 °C +14 V Input P9dB 170 mA 7W 158 °C 10.6 °C / W Rating Ordering Information Part No. AH420-EG AH420-EPCB900 AH420-EPCB1960 AH420-EPCB2140 Description 4W High Linearity InGaP HBT Amplifier 920-960 MHz Evaluation Board 1930-1990 MHz Evaluation Board 2110-2170 MHz Evaluation Board Thermal Resistance, ΘJC Operation of this device above any of these parameters may cause permanent damage. Standard T/R size = 500 pieces on a 7” reel. Specifications and information are subject to change without notice. Page 1 of 8 Aug 2009 TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com AH420 4W High Linearity InGaP HBT Amplifier Application Circuit PC Board Layout GND GND Vpd Vcc Baseplate Configuration Circuit Board Material: 0.014” GETEK, single layer, 1 oz copper, εr = 4.2, Microstrip line details: width = .030”, marker spacing = .050” Notes: 1. Please note that for reliable operation, the evaluation board will have to be mounted to a much larger heat sink during operation and in laboratory environments to dissipate the power consumed by the device. The use of a convection fan is also recommended in laboratory environments. 2. The area around the module underneath the PCB should not contain any soldermask in order to maintain good RF grounding. Specifications and information are subject to change without notice. TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 2 of 8 Aug 2009 AH420 60 4W High Linearity InGaP HBT Amplifier S-Parameters (VCC= +5 V, ICC = 800 mA, 25 °C, unmatched 50 ohm system) 1.0 Typical Device Data 0.8 6 0. 0 6 0. Swp Max 6GHz 2. 1.0 0.8 Gain / Maximum Stable Gain S(1,1) AH420_EG S11 S(2,2) AH420_EG S22 Swp Max 6GHz 2. 0 40 0.2 0 3. 0 4. 5.0 0.2 Gain (dB) 20 10.0 10.0 10.0 0 -10.0 -10.0 -40 0 2 Frequency (GHz) 4 6 -0 .4 -0 .4 0 2. -0 .6 -0 .6 - -0.8 Swp Min 0.01GHz -0.8 - 0 2. Swp Min 0.01GHz -1.0 Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the red line. S-Parameters (VCC = +5 V, ICQ = 800 mA, 25 °C, unmatched 50 ohm system, calibrated to device leads) Freq (MHz) S11 (dB) S11 (deg) S21 (dB) S21 (deg) S12 (dB) S12 (deg) S22 (dB) S22 (deg) 10 50 100 300 500 700 900 1100 1300 1500 1700 1900 2100 2300 2500 2700 2900 3100 3300 3500 3700 3900 4100 4300 -1.22 -0.44 -0.31 -0.28 -0.30 -0.40 -0.43 -0.50 -0.59 -0.74 -0.98 -1.40 -2.04 -2.78 -2.88 -2.04 -1.32 -0.95 -0.78 -0.69 -0.63 -0.61 -0.58 -0.54 -176.79 -177.23 -178.77 179.40 178.17 176.72 175.77 173.96 171.86 169.75 167.20 164.19 161.94 163.47 169.61 171.93 169.73 167.05 164.66 162.98 161.89 161.39 161.33 161.51 29.97 24.42 19.17 10.27 6.16 3.74 2.09 0.99 0.42 0.16 0.25 0.63 1.22 1.53 0.74 -1.59 -4.55 -7.58 -10.52 -13.08 -15.60 -17.79 -19.66 -21.87 155.67 117.15 103.73 90.61 84.91 79.16 74.69 69.01 62.55 55.48 46.05 34.50 18.13 -4.61 -32.66 -58.88 -77.51 -90.68 -100.04 -106.66 -112.19 -116.53 -121.50 -124.38 -52.77 -45.04 -44.01 -43.22 -43.10 -43.48 -41.72 -41.21 -40.35 -39.33 -38.86 -38.13 -36.71 -35.70 -36.03 -37.72 -39.74 -41.31 -42.50 -43.74 -42.73 -43.74 -43.35 -42.62 64.11 32.25 11.29 5.32 -0.42 36.07 5.11 -1.08 -4.63 -10.41 -20.47 -34.84 -51.74 -78.76 -114.19 -145.67 -179.01 163.85 141.73 129.82 112.53 105.15 107.61 97.03 -1.61 -1.05 -1.16 -0.94 -0.93 -1.02 -1.07 -1.11 -1.15 -1.21 -1.24 -1.24 -1.19 -0.95 -0.62 -0.52 -0.55 -0.68 -0.80 -0.87 -0.90 -0.92 -0.92 -0.97 -1.0 -39.70 -122.90 -150.31 -169.59 -174.28 -177.33 -177.23 -178.10 -178.55 -179.14 -179.88 179.85 179.15 178.06 175.59 171.28 168.08 165.55 164.25 162.92 162.24 161.57 161.67 162.11 Device S-parameters are available for download off of the website at: http://www.tqs.com Specifications and information are subject to change without notice TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 3 of 8 Aug 2009 -4 .0 -3 .0 -4 .0 DB(GMax()) AH420_EG DB(|S(2,1)|) AH420_EG .0 -5. 0 -5. 0 -20 2 -0. 2 -0. 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0 0 0. 4 -3 0. 4 0 3. 0 4. 5.0 AH420 Frequency (MHz) Channel Power Power Gain Input Return Loss Output Return Loss ACPR P1dB Output IP3 At 27dBm/tone, 1MHz spacing 4W High Linearity InGaP HBT Amplifier 920-960 MHz Reference Design (AH420-EPCB900) W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.2 dB @ 0.01% Probability, 3.84 MHz BW Typical W-CDMA Performance at 25°C 920 940 960 Units +27 +27 +27 dBm 15.9 16 16.1 dB 17 14 11 dB 5.3 6.4 8.0 dB -47 -46.5 -46.5 dBc +35.2 +35.2 +35.2 dBm +51 6.5 +50 6.6 800 +5 C7 C8 +49 6.7 dBm dB mA V Noise Figure Quiescent Current, Icq Vpd, Vcc D1 FB1 C22 R3 C3 C5 C4 C6 C2 C1 R1 C14 C17 C13 C15 C12 Notes: 1. The primary RF microstrip line is 50 Ω. 2. Do not exceed 5.5V on Vpd and Vcc or damage will occur to D1. 3. Components shown on the silkscreen but not on the schematic are not used. 4. Vpd used for device power down (low=RF off) 5. The edge of C13 is placed at 75mil from AH420 RFout pin. (3.9 o @ 940 MHz) 6. The edge of C15 is placed 145mil from the edge of C13. (7.5 o @ 940 MHz) 7. The edge of C14 is placed at 150mil from AH420 Rfin pin. (7.7 o @ 940 MHz) 8. The edge of C17 is placed against the edge of C14. 9. 0 Ω jumpers can be replaced with copper trace in target application. Return Loss 0 -5 T=25°C Gain vs. Frequency 18 T=25°C R2 R4 L1 OIP3 vs. Output Power/Tone vs. Temperature f=940 MHz 55 17 50 OIP3 (dBm) S11, S22 (dB) Gain (dB) -10 -15 -20 16 45 15 40 S11 S22 +25°C -40°C +85°C 14 0.90 0.92 0.94 0.96 0.98 -25 0.90 35 0.92 0.94 Frequency (GHz) T=25°C 0.96 0.98 20 22 Frequency (GHz) ACPR vs. Output Average Power vs. Frequency T=25°C 24 26 Output Power (dBm) 28 30 OIP3 vs. Output Power/Tone vs. Frequency 52 P1dB vs. Frequency vs. Temperature 37 -35 -40 ACPR (dBc) W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2 dB @ 0.01% Probability 3.84 MHz BW OIP3 (dBm) 50 36 48 -50 -55 -60 920 MHz 940 MHz 960 MHz P1dB (dBm) -45 35 46 34 44 920 MHz 42 940 MHz 960 MHz 29 30 +25°C 33 920 930 -40°C 940 Frequency (MHz) T=25°C +85°C 950 960 -65 15 16 17 18 19 20 21 22 Output Power (dBm) T=25°C 23 24 25 24 25 26 27 28 Output Power (dBm) Current vs Output Average Power vs. Frequency 1100 Collector Current (mA) 8 Noise Figure vs. Frequency T=25°C Efficiency vs Output Average Power vs. Frequency 20 Collector Efficiency (%) 1050 1000 950 900 920 MHz 850 24 25 26 27 28 Output Power (dBm) 29 30 940 MHz 960 MHz 7 15 NF (dB) 6 10 5 5 920 MHz 940 MHz 960 MHz 29 30 4 0.90 0 0.92 0.94 0.96 0.98 24 25 Frequency (GHz) 26 27 28 Output Power (dBm) Specifications and information are subject to change without notice TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 4 of 8 Aug 2009 AH420 Frequency (MHz) Channel Power Power Gain Input Return Loss Output Return Loss ACLR P1dB Output IP3 At 27dBm/tone, 1MHz spacing 4W High Linearity InGaP HBT Amplifier 1930-1990 MHz Reference Design (AH420-EPCB1960) W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.2 dB @ 0.01% Probability, 3.84 MHz BW Typical W-CDMA Performance at 25°C 1930 1960 1990 +27 +27 +27 13.4 14.1 14.1 13 19 11 4.7 7 12 -49 -48 -47 +35.6 +35.6 +35.6 +49 5.6 +49 5.3 800 +5 C7 C8 Units dBm dB dB dB dBc dBm dBm dB mA V +49 5.3 Noise Figure Quiescent Current, Icq Vpd, Vcc D1 C3 C5 C9 C10 C11 C4 C6 C2 C1 R1 C14 C13 C15 C12 C17 C16 Notes: 1. The primary RF microstrip line is 50 Ω. 2. Do not exceed 5.5V on Vpd and Vcc or damage will occur to D1. 3. Components shown on the silkscreen but not on the schematic are not used. 4. Vpd used for device power down (low=RF off) 5. The edge of C13 is placed at 75mil from AH420 RFout pin. (8.0 o @ 1960 MHz) 6. The edge of C15 is placed 50mil from the edge of C13. (5.3 o @ 1960 MHz) 7. The edge of C16 is placed 345mil from the edge of C15. (37 o @ 1960 MHz) 8. The edge of C14 is placed at 160mil from AH420 Rfin pin. (17.2 o @ 1960 MHz) 9. The edge of C17 is placed 95mil from the edge of C14. (10.2 o @ 1960 MHz) 10. 0 Ω jumpers can be replaced with copper trace in target application. FB1 R3 R2 Gain vs. Frequency 15 14 T=25°C S11, S22 (dB) ACLR (dBc) R4 L1 Return Loss 0 -5 -10 -15 -20 T=25°C ACLR vs. Output Average Power vs. Frequency -35 -40 -45 -50 -55 S11 S22 -60 2.00 T=25°C Gain (dB) 13 12 11 10 1.92 1930 MHz 24 25 1960 MHz 1990 MHz 28 29 1.94 1.96 Frequency (GHz) 1.98 2.00 -25 1.92 1.94 1.96 Frequency (GHz) 1.98 26 27 Output Power (dBm) Current vs Output Average Power vs. Frequency 1050 Collector Current (mA) T=25°C Noise Figure vs. Frequency T=25°C 8 1000 950 900 850 1930 MHz 800 24 25 26 27 Output Power (dBm) 28 29 1960 MHz 1990 MHz 7 NF (dB) 6 5 4 1.90 1.92 1.94 1.96 1.98 2.00 Frequency (GHz) Specifications and information are subject to change without notice TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 5 of 8 Aug 2009 AH420 4W High Linearity InGaP HBT Amplifier 2010-2025 MHz Application Circuit Performance Plots TD-SCDMA 3 Carrier, PAR = 10 dB @ 0.01% Probability, 1.28 MHz BW Typical TD-SCDMA Performance at 25°C Frequency (MHz) 2010 2015 2025 Units Power Gain 14.9 15 14.8 dB Input Return Loss 14 13 12 dB Output Return Loss 11 12 13 dB mA Quiescent Current, Icq 800 V Vpd +5 V Vcc +5 C7 C8 D1 FB1 R3 C3 C5 C9 C10 C11 R2 C4 R4 C6 L1 C2 C1 R1 C14 C13 C15 C12 C17 C16 Notes: 1. The primary RF microstrip line is 50 Ω. 2. Components shown on the silkscreen but not on the schematic are not used. 3. The edge of C13 is placed at 75mil from AH420 RFout pin. (8.3 o @ 2015 MHz) 4. The edge of C15 is placed 50mil from the edge of C13. (5.5 o @ 2015 MHz) 5. The edge of C16 is placed 345mil from the edge of C15. (38 o @ 2015 MHz) 6. The edge of C14 is placed at 160mil from AH420 RFin pin. (17.6 o @ 2015 MHz) 7. The edge of C17 is placed 95mil from the edge of C14. (10.5 o @ 2015 MHz) Gain vs Frequency 16 15 14 13 12 T=25°C Return Loss 0 -5 T=25°C Efficiency vs Output Average Power vs. Frequency 20 Collector Efficiency (%) T=25°C 15 S11, S22 (dB) Gain (dB) -10 -15 -20 10 5 S21 11 2.00 2.01 2.02 Frequency (GHz) 2.03 2.04 -25 2.00 2.01 2.02 Frequency (GHz) S11 2.03 S22 0 2.04 2010 MHz 20 21 22 2015 MHz 2025 MHz 26 27 28 23 24 25 Output Power (dBm) Current vs Output Average Power vs. Frequency 1000 Collector Current (mA) T=25°C ACLR vs. Output Average Power vs. Frequency -40 -42 -44 ACLR (dBc) T=25°C 950 -46 -48 -50 -52 -54 -56 -58 -60 900 850 2010 MHz 800 20 21 22 23 24 25 26 Output Power (dBm) 27 28 2015 MHz 2025 MHz 2010 MHz 2015 MHz 2025 MHz 19 20 21 22 23 Output Power (dBm) 24 25 Specifications and information are subject to change without notice TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 6 of 8 Aug 2009 AH420 Frequency (GHz) Channel Power Power Gain Input Return Loss Output Return Loss ACLR P1dB Output IP3 At 27dBm/tone, 1MHz spacing 4W High Linearity InGaP HBT Amplifier 2110-2170 MHz Reference Design (AH420-EPCB2140) W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.2 dB @ 0.01% Probability, 3.84 MHz BW Typical W-CDMA Performance at 25°C 2110 2140 2170 Units +26 +26 +26 dBm 13.3 14 14 dB 14 12 10 dB 5 7.4 9 dB -50 -49 -50 dBc +35.8 +35.7 +35.2 dBm +49 5.8 +50 5.6 800 +5 C7 C8 +50 5.5 dBm dB mA V Noise Figure Quiescent Current, Icq Vpd, Vcc D1 FB1 R3 C3 C5 C4 C6 C2 C1 R1 C14 C13 C15 C12 C16 C17 Notes: 1. The primary RF microstrip line is 50 Ω. 2. Do not exceed 5.5V on Vpd and Vcc or damage will occur to D1. 3. Components shown on the silkscreen but not on the schematic are not used. 4. Vpd used for device power down (low=RF off) 5. The edge of C13 is placed at 65mil from AH420 RFout pin. (7.6 o @ 2140 MHz) 6. The edge of C15 is placed 60mil from the edge of C13. (7.0 o @ 2140 MHz) 7. The edge of C16 is placed 340mil from the edge of C15. (39.9 o @ 2140 MHz) 8. The edge of C14 is placed at 155mil from AH420 RFin pin. (18.2 o @ 2140 MHz) 9. The edge of C17 is placed 205mil from the edge of C14. (24.0 o @ 2140 MHz) 10. 0 Ω jumpers can be replaced with copper trace in target application. Gain vs. Frequency 15 14 T=25°C S11, S22 (dB) ACLR (dBc) R2 R4 C20 C22 C21 L1 Return Loss 0 -5 -10 -15 -20 T=25°C ACLR vs. Output Average Power vs. Frequency -35 -40 -45 -50 -55 T=25°C Gain (dB) 13 12 11 10 2.10 S11 2.12 2.14 2.16 2.18 2.20 S22 -60 2.20 2110 MHz 24 25 2140 MHz 2170 MHz 28 29 -25 2.10 2.12 Frequency (GHz) ACLR vs. Output Average Power vs. Temperature -40 -45 55 2.14 2.16 Frequency (GHz) 2.18 26 27 Output Power (dBm) f=2140 MHz OIP3 vs. Output Power / tone vs. Frequency OIP3 vs. Output Power/Tone vs. Temperature 55 50 50 OIP3 (dBm) ACLR (dBc) -50 -55 -60 OIP3 (dBm) 45 45 40 40 +25°C -65 23 24 -40°C +85°C 35 2140 MHz 28 20 22 2110 MHz 2170 MHz 35 30 +25°C -40°C +85°C 25 26 Output Power (dBm) 27 24 26 28 Output Power / tone (dBm) T=25°C 20 22 24 26 Output Power (dBm) Noise Figure vs. Frequency T=25°C 28 30 P1dB vs. Frequency vs. Temperature 38 Current vs Output Average Power vs. Frequency 1050 Collector Current (mA) 8 37 P1dB (dBm) 1000 950 900 850 2110 MHz 800 2140 MHz 2170 MHz 28 29 7 NF (dB) 36 6 35 5 +25°C 34 2.10 2.12 -40°C 2.14 2.16 Frequency (GHz) +85°C 2.18 2.20 24 25 26 27 Output Power (dBm) 4 2.10 2.12 2.14 2.16 2.18 2.20 Frequency (GHz) Specifications and information are subject to change without notice TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 7 of 8 Aug 2009 AH420 4W High Linearity InGaP HBT Amplifier Mechanical Information This package is lead-free/green/RoHS-compliant. The plating material on the backside metallization is Matte Tin. It is compatible with both lead-free (maximum 260 °C reflow temperature) and lead (maximum 245 °C reflow temperature) soldering processes. Outline Drawing Product Marking The AH420 will be marked with an “AH420G” designator with a lot code marked below the part designator. The “Y” represents the last digit of the year the part was manufactured, the “XXX” is an auto-generated number, and “Z” refers to a wafer number in a lot batch. AH420G YXXX-Z Tape and reel specifications for this part are located on the website in the “Application Notes” section. ESD / MSL Information Mounting Configuration / Land Pattern ESD Rating: Value: Test: Standard: ESD Rating: Value: Test: Standard: Class 1A Passes 250V to