TQ5135

WIRELESS COMMUNICATIONS DIVISION GND/LNA Gain LNA Mode LNA Out N/C TQ5135 DATA SHEET MXR In logic 1 GND RF In LNA GND 3V Cellular CDMA/AMPS LNA/Mixer Receiver IC Mixer GND LO Vdd LNA Bias active bias LO Buffer IF Amp LO In Features § Single +2.8V Operation § Adjustable Gain/IP3/Current LNA Vdd GND IF Out GIC § Low Current Operation § Few external components § QFN 3x3mm, 16 Pin Leadless Plastic Package § High Input IP3 § Low Noise Figure Product Description The TQ5135 is an LNA-Downconverter optimized for use in the Korean, Japanese, and US CDMA Bands. The integrated LNA has the gain step function required for CDMA, and features very low NF and excellent IP3. An external resistor controls LNA bias, making LNA Idd adjustable. The integrated mixer features very high IP3 and provision for external adjustment of gain, IP3, and Idd. Because of the external LO tuning inductor, IF’ in the range of 85 to 200Mhz s can be used. The excellent RF performance with low current coupled with very small lead-less plastic package is ideally suited for Cellular band mobile phone. Applications § CDMA mobile Applications § Cellular and AMPS mobile applications worldwide § Wireless data applications Electrical Specifications1 Parameter RF Frequency Conversion Gain Noise Figure Input 3rd Order Intercept DC supply Current Min Typ 881.5 25.0 1.9 -5.5 20 Max Units MHz dB dB dBm mA Note 1. Test Conditions: Vdd=+2.8V, TC=+25C, RF=881.5MHz, RF in =-30dBm LO=966.5MHz, LO input=-4dBm, IF=85MHz For additional information and latest specifications, see our website: www.triquint.com 1 TQ5135 Data Sheet Absolute Maximum Ratings Parameter Storage Temperature Case Temperature w/bias Supply Voltage Voltage to any non supply pin Symbol Tstore Tc VDD Minimum -60 -40 0 Nominal 25 25 2.8 Maximum 150 85 4 Units deg. C deg. C V VDD+0.5V Note 1: All voltages are measured with respect to GND (0V), and they are continuous. 2: Absolute maximum ratings as detailed in this table, are ratings beyond which the device’ performance may be impaired and/or permanent damage may occur. s Electrical Characteristics Parameter RF Frequency IF Frequency LO input level Supply voltage High Gain Mode Conversion Gain 1,3,4 Noise Figure1,4 Input 3rd Order Intercept1,3,4 Supply Current Bypass Mode Conversion Gain 1,3,4 Noise Figure1,4 Input 3rd Order Intercept1,3,4 Supply Current Note 1. 2. 3. 4. Conditions Min. 832 85 -7 Typ/Nom Max. 894 200 Units MHz MHz dBm V dB -4 2.8 -1 LNA Mode = 0 V 22.0 -7.5 LNA Mode = Vsup 5.5 10.0 7.5 11.0 12.0 10.0 16.0 12.0 dB dB dBm mA 25.0 1.9 -5.5 20.0 23.5 2.4 dB dBm mA Test Conditions (devices screened for Conversion Gain, Noise Figure, and IIP3 to the above limits): Vdd = +2.8V, RF = 881.5MHz, LO = 966.5MHz, IF = 85.0MHz, LO input = -4dBm, RF input = -30dBm(High Gain Mode), TC = +25°C, unless otherwise specified. Min./Max. limits are at +25°C case temperature unless otherwise specified. Conversion Gain depends on the values of the two resistors used in the GIC circuit. Data includes image reject filter (Fujitsu P/N: F5CE-881M50-K206-W) insertion loss of 1.6dB 2 For additional information and latest specifications, see our website: www.triquint.com TQ5135 Data Sheet Typical Electrical Characteristics – LNA only: Parameter RF Frequency High Gain Mode Conversion Gain Noise Figure1 1,3 Conditions Min. 832 Typ/Nom Max. 894 Units MHz dB dB dBm mA dB dB dBm mA LNA Mode = 0 V 16 1.5 7.0 9.5 LNA Mode = Vsup -2.5 2.5 32 0.7 Input 3rd Order Intercept1,3 Supply Current Bypass Mode Conversion Gain 1,3 Noise Figure1 Input 3rd Order Intercept1,3 Supply Current Note 1. 2. 3. Min./Max. limits are at +25°C case temperature unless otherwise specified. Conversion Gain depends on the values of the two resistors used in the GIC circuit. Test Conditions: Vdd = +2.8V, RF = 881.5MHz, LO = 966.5MHz, I F= 85MHz, LO input = -4dBm, RF input = -35dBm, TC = 25°C, unless otherwise specified. Electrical Characteristics – Mixer only: Parameter RF Frequency IF Frequency Conversion Gain Noise Input Figure1,4 Order Intercept1,3,4 3rd 1,3,4 Conditions Min. 832 85 Typ/Nom Max. 894 200 Units MHz MHz dB dB dBm mA 9.0 8.5 10.0 10.0 Supply Current Note 1: 2. 3. 4. Min./Max. limits are at +25°C case temperature unless otherwise specified. Conversion Gain depends on the values of the two resistors used in the GIC circuit. Data includes image reject filter (Fujitsu P/N: F5CE-881M50-K206-W) insertion loss of 1.6dB Test Conditions: Vdd = +2.8V, RF = 881.5MHz, LO = 966.5MHz, I F= 85MHz, LO input = -4dBm, RF input = -15dBm, TC = 25°C, unless otherwise specified. For additional information and latest specifications, see our website: www.triquint.com 3 TQ5135 Data Sheet Typical Test Circuit for CDMA Cellular: Test Conditions (Unless Otherwise Specified): Vdd=+2.8V, Tc=+25C, RF=881MHz, LO=966MHz, IF=85MHz, PRF=-30dBm, PLO=-4dBm B+ LNA Mode AUXin C11 Vdd C1 R1 Lsource F1 C6 L5 Alternate Network LNA Mode LNA Out GND NC RFin L1 L4 MXR In GND RF In GND C7 C8 Vdd TQ5135 C5 GND VDD IF Bias IF Out LO In LOin L2 R6 R7 GND VDD LNA Bias C10 Vdd R9 C9 R16 R12 L3 C14 C13 C15 IFout Bill of Material for TQ5135 LNA/Downconverter Mixer for GIC tuning plots Component Receiver IC Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Inductor Inductor Inductor Inductor Resistor Resistor Resistor Resistor Resistor RF Saw Filter C1, C11, C13 C5 C6 C7 C8, C9, C10 C14 C15 L1 L2 L3 L4, L5 R1, R16 R6 R7 R9 R12 F1 Reference Designator Part Number TQ5135 0.1uF 2.7pF 4.7pF 22pF 1000pF 56pF 56pF 15nH 18nH 100nH 12nH 3.3O 20O 4.7KO 1.8O 56O Value Size 3x3mm 0402 0402 0402 0402 0402 0402 0402 0402 0402 0603 0402 0402 0402 0402 0402 0402 3x3mm SAWTEK TOKO TOKO TOKO TOKO Manufacturer TriQuint Semiconductor 4 For additional information and latest specifications, see our website: www.triquint.com TQ5135 Data Sheet CDMA Cellular Band Typical Performance – High Gain Mode Test Conditions (Unless Otherwise Specified): Vdd=+2.8V, Tc=+25C, RF = 881.5MHz, LO = 966.5MHz, I F= 85MHz Conversion Gain vs Vdd vs Freq 27 26 Conversion Gain (dB) 25 24 23 22 2_6V 2_7V 2_8V 2_9V Conversion Gain vs Vdd vs Temp 27 26 Conversion Gain (dB) 25 24 23 22 21 2.5 2.6 2.7 Vdd (V) -40C 25C 85C 21 865 870 875 880 885 890 895 900 RF Freq (MHz) 2.8 2.9 3 Conversion Gain vs Temp vs Freq 29 27 Conversion Gain (dB) 25 23 21 19 865 870 875 880 885 890 895 900 -40C 25C 85C Conversion Gain vs LO vs Freq 28 Conversion Gain (dB) 26 24 22 -1dBm -4dBm -7dBm RF Freq (MHz) 20 865 870 875 880 885 890 895 900 RF Freq (MHz) Idd vs Vdd vs Temperature 21 21 Idd vs Temperature vs Frequency 20 Idd (mA) Idd (mA) -40C 25C 85C 20 19 19 18 18 -40C 25C 85C 17 2.5 2.6 2.7 Vdd (V) 2.8 2.9 3 17 865 870 875 880 885 890 895 900 RF Freq (MHz) For additional information and latest specifications, see our website: www.triquint.com 5 TQ5135 Data Sheet Input IP3 vs Vdd vs Temperature -2 0 -2 Input IP3 vs Temp vs Freq -4 IP3 (dBm) IP3 (dBm) -40C 25C 85C -4 -6 -8 -10 -40C 25C 85C -6 -8 -10 2.5 2.6 2.7 Vdd (V) 2.8 2.9 3 -12 865 870 875 880 885 890 895 900 RF Freq (MHz) Input IP3 vs LO Drive vs Frequency -2 -4 IP3 (dBm) -6 -8 -10 -1dBm -4dBm -7dBm Noise Figure vs Temp vs Freq 3.5 3 Noise Figure (dB) 2.5 2 1.5 1 0.5 -40C 25C 85C -12 865 870 875 880 885 890 895 900 RF Freq (MHz) 0 865 870 875 880 885 890 895 900 Frequency (MHz) Noise Figure vs Vdd vs Temp 3.5 3 Noise Figure (dB) 2.5 2 1.5 1 0.5 0 2.5 2.6 2.7 2.8 Vdd (V) 2.9 3 -40C 25C 85C 6 For additional information and latest specifications, see our website: www.triquint.com TQ5135 Data Sheet CDMA Cellular Band Typical Performance – Low Gain Mode Test Conditions (Unless Otherwise Specified): Vdd=+2.8V, Tc=+25C, RF = 881.5MHz, LO = 966.5MHz, I F= 85MHz Conversion Gain vs Vdd vs Freq 9 8 Conversion Gain vs Vdd vs Temp 9 8 Conversion Gain (dB) 7 6 5 4 2.5 2.6 2.7 Vdd (V) 2.8 2.9 3 -40C 25C 85C Conversion Gain (dB) 7 6 5 2.6V 2.7V 2.8V 2.9V 4 865 870 875 880 885 890 895 900 RF Freq (MHz) Conversion Gain vs Temp vs Freq 10 10 Conversion Gain vs LO vs Freq Conversion Gain (dB) Conversion Gain (dB) 8 8 6 6 4 -40C 25C 85C 4 -1dBm -4dBm -7dBm 2 865 870 875 880 885 890 895 900 RF Freq (MHz) 2 865 870 875 880 885 890 895 900 RF Freq (MHz) Idd vs Vdd vs Temperature 13 12 11 Idd (mA) 10 9 8 2.5 2.6 2.7 Vdd (V) 2.8 2.9 3 -40C 25C 85C Idd vs Temperature vs Frequency 13 12 11 10 9 -40C 25C 85C Idd (mA) 8 865 870 875 880 885 890 895 900 RF Freq (MHz) For additional information and latest specifications, see our website: www.triquint.com 7 TQ5135 Data Sheet Input IP3 vs Vdd vs Temperature 15 14 Input IP3 vs Temp vs Freq 18 16 IP3 (dBm) 14 12 10 -40C 25C 85C IP3 (dBm) 13 12 11 10 2.5 2.6 2.7 Vdd (V) 2.8 2.9 3 -40C 25C 85C 8 865 870 875 880 885 890 895 900 RF Freq (MHz) Input IP3 vs LO Drive vs Frequency 16 14 Noise Figure vs Vdd vs Temperature 13 12 Noise Figure (dB) 11 10 9 8 7 2.5 2.6 2.7 Vdd (V) 2.8 2.9 3 -40C 25C 85C IP3 (dBm) 12 10 -1dBm 8 -4dBm -7dBm 6 865 870 875 880 885 890 895 900 RF Freq (MHz) Noise Figure vs Temp vs Frequency 14 Noise Figure (dB) 12 10 8 -40C 25C 85C 6 865 870 875 880 885 890 895 900 RF Freq (MHz) 8 For additional information and latest specifications, see our website: www.triquint.com TQ5135 Data Sheet Pinout Description: The TQ5135 is a complete front-end for a low band CDMA handset receiver. It combines a high IP3 low noise amplifier, a high intercept mixer, and an IF amplifier. The LNA uses an off-chip matching network, which connects to the input at pin 2. The amplifier was designed so that the match for maximum gain also gives very low noise figure. The LNA has two modes, high gain and bypass. Pin 15 is the input to the gain control logic, which drives the switch FETs. In the high gain mode (pin 15=low), the LNA provides around 17dB of gain. In the bypass mode (pin 15=high) it has a loss of about 2dB. The LNA also provides several ways of setting gain and intercept in the design phase. The LNA FET source is brought out to Pin 16, where a small value of inductance to ground can be added. The inductor can be discrete or simply a small length of pc board trace. Several dB of adjustment is possible. A bias resistor on pin 4 is used to set the LNA supply current. A nominal value of 2.7kohm is recommended, but it can be increased for lower LNA Idd. The LNA output signal is at Pin 14. It is a 50 ohm line and can be connected directly to a SAW image filter. The image filter output connects to the mixer input at Pin 12. The mixer receives its LO via a buffer which amplifies the signal from Pin 9. The drain of buffer transistor is connected to Pin 10 where it is connected to an external LO tuning inductor. GND/LNA Gain LNA Mode LNA Out N/C The IF signal from the mixer is fed to an amplifier. The IF amplifier is an open drain type with output at Pin 7. An external matching circuit is required to match the IF output to a filter. The IF amplifier also has a GIC pin (Gain-InterceptCurrent). It is used to set the DC current and gain of the IF stage. Application Information: Half IF Spur Rejection Considerations: The TQ5135 does not contain a balanced mixer so Half-IF spur rejection is completely set by the image filter. Thus we do not recommend using an IF that is less than 2.5 times the image filter. Grounding: With good layout techniques there should not be any stability problems. Poor circuit board design can result in a circuit that oscillates. Good grounding is especially important for the TQ5135 since it uses an outboard LO tuning inductor that provides one more potential ground loop path. One could use the evaluation board as an example of proper layout techniques. It is important to position the LO tuning, GIC, and IF matching components as close to the chip as possible. If the components are far enough away they and their corresponding pc board traces can act as quarter wave logic 1 GND MXR In RF In LNA GND resonators in the 5-10Ghz region. If both the IF and the LO paths to ground resonate at the same frequency, oscillation can result. It is most important that the ground on the GIC bypass cap, the ground on the LO tuning bypass capacitor, and the IF shunt cap ground return back to the chip grounds with minimal inductance (Figure 2). Also, improving the ground at the LO tuning inductor bypass cap will increase circuit Q. Thus mixer drive is improved with a resultant higher IP3. Improved ground here means minimal inductance between the chip ground pins and the other ground return points. Mixer GND LO Vdd LNA Bias active bias LO Buffer IF Amp LO In LNA Vdd GND IF Out GIC Figure 1. TQ5135 Block diagram For additional information and latest specifications, see our website: www.triquint.com 9 TQ5135 Data Sheet LNA Out GND VDD image filter, and mixer. The RF signal is amplified by the LNA, passes through the image filter, and is converted down to the IF where it is amplified by the IF output FET. The quiescent current in the IF amplifier is set by the GIC network. Both the filter and the mixer terminate the RF signal with 50ohms. Vdd GND MXR In GND VDD IF Bias RF In GND TQ5135 GND VDD IF Out LNA Bias LO In However, the situation is much different with the LO signal. At the LO frequency the image filter looks like a short circuit. Some LO energy leaks out of the mixer input, bounces back off of the image filter and returns back into the mixer with some phase or delay. The delayed LO signal mixes with the normal LO to create a DC offset which is fed into the IF amplifier and changes the quiescent current. Depending on the phase of the reflected LO, the IF stage current may be higher or lower. The DC offset also affects the passive mixer FET to some degree as well. It has been found empirically that varying the delay between the filter and mixer can have positive or negative consequences on IP3, CG, and NF. It is for this reason that an LC network is useful between the SAW and mixer input, even though the mixer input can have an adequate match at the RF frequency without any external components. Vdd IFout Minimize These Lengths Figure 2. Critical signal Paths Mixer – Filter Interaction: Before attempting a new TQ5135 application, it is important to understand the nonlinear interaction between the image filter and the mixer. The device IP3 is a strong function of this interaction. For this reason it is helpful to consider the filter and mixer as one nonlinear block. Figure 3 shows a much simplified block diagram of the LNA, 25-100 ohms at RFshort circuit at LO Mixer Portion of TQ5135 IF Output FET RF in 2 LNA Out LNA Portion of TQ5135 LO Leakage 12 Mixer IF Output 7 14 Mixer in Idd + Idd Offset IF + DC Offset band pass LO Leakage ( φ ) LO 9 to GIC 8 (LO Leakage( φ) LO) = DC Offset + at Mixer IF Output Figure 3. Non-linear filter-Mixer Interaction 10 For additional information and latest specifications, see our website: www.triquint.com TQ5135 Data Sheet LNA S-Parameters : S-Parameters for the TQ5135 LNA taken in both the high gain and low gain modes. We have not included noise parameters since for this device Gamma-Opt is very close to the conjugate match. Figure 4: LNA S11 in HG Mode Figure 6: LNA S21 in HG Mode Figure 5: LNA S12 in HG Mode Figure 7: LNA S22 in HG Mode For additional information and latest specifications, see our website: www.triquint.com 11 TQ5135 Data Sheet Figure 8: LNA S11 in LG Mode Figure 10: LNA S21 in LG Mode Figure 9: LNA S12 in LG Mode Figure 11: LNA S22 in LG Mode 12 For additional information and latest specifications, see our website: www.triquint.com TQ5135 Data Sheet SUGGESTED STEPS FOR TQ5135 TUNING: The following order of steps is recommended for applying the TQ5135. They are described in detail in the following sections: Lay out board consistent with the grounding guidelines at the beginning of this note. See section 1 regarding LNA source inductor. 1. Determine the LNA bias resistor value and source inductor value 2. Determine the LNA input matching network component values. Test the LNA by itself. 3. For the mixer, experimentally determine proper LO tuning components. This step needs to be done first since all of the later tuning is affected by it. 4. Determine a tentative GIC network. It will have to be finetuned later, since the image filter interaction will affect device current. 5. Synthesize a tentative IF output match. It may have to be fine-tuned later, as the final GIC configuration affects IF stage current. LO is turned ON. 6. Experimentally determine a tentative mixer RF Input match. LO is turned ON. Test the filter-mixer cascade. Verify that the device has adequate IP3. If not, another RF Input matching topology can be tried. 7. Fine tune GIC components for needed Idd. LO is turned ON. 8. Check IF match to see if it still is adequate. LO is turned ON. 9. Test the device as a whole- LNA, filter, mixer dB 1. Determine LNA Bias Resistor Value and Source Inductor Value For most designs we recommend an LNA bias resistor of 2.7K ohms. All of the datasheet specs assume that value of resistor. However, if LNA Idd