TQM7M4006

TQM7M4006 DATASHEET 3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module Functional Block Diagram DCS / PCS in DCS / PCS Out Features • • • • • • • • • • Very compact size – 5×5×1.1 mm3. Positive supply voltage – 3.0 to 4.5 V. High efficiency – typical GSM850 52%, GSM900 57%, DCS 51%, PCS 51%. CMOS internal closed-loop power control. >55 dB dynamic control range. GPRS class 12 compatible. High-reliability InGaP technology. Ruggedness 10:1. 50 Ω input and output impedances. Few external components Band Select Logic TX_EN VBATT VRAMP Power Control VCC GSM 850 / 900 IN GSM 850 / 900 Out Product Description The TQM7M4006 is an advanced, quad-band, ultra-compact, 3V power amplifier module designed for mobile handset applications. The module sets new standards in performance and size by employing the latest technologies in HBT power amplifier design, laminate design and CuFlip™ assembly technology. Highreliability is assured by InGaP HBT technology. This fully integrated module, in a minimal form factor, provides a simple 50 Ω interface on all input and output ports. It includes internal power control with wide dynamic range, and on-board reference voltage. No external matching or bias components are required. Despite its very compact size, the module has exceptional efficiency in all bands. Incorporates two highly-integrated InGaP power amplifier die, a GaAs high Q passive matching die with a CMOS controller. All die are CuFlip™ mounted to minimize thermal excursions. Each amplifier has three gain stages with interstage matching implemented with a high Q passives technology for optimal performance. The CMOS controller implements a fully integrated power control circuit within the module, eliminating the need for external detection to assure the output power level. The latter is set directly from the Vramp input from the DAC. The module has Tx enable and band select inputs and a highly-stable on-board reference voltage. Excellent performance is achieved across the 824 – 849 MHz, 880 – 915 MHz, 1710 – 1785 MHz, and 1850 – 1910 MHz bands. Module construction is a low-profile overmolded land-grid array on laminate. Applications • • GSM handsets GSM wireless cards and data links Package Style Package Size: LGA 5 x 5 x 1.1 mm3 Top View Vcc2D RF_in_DCS BS Tx_En Vbatt Vramp RF_out_DCS Gnd Vcc3 RF_out_GSM Electrical Specifications Parameter Min GSM Pout Efficiency Pin 34.2 44 1.5 850 Band Typ 35 52 5 8 Max Min 34.2 50 1.5 900 Band Typ 35 57 5 8 Max DCS / PCS Band Min 32.5/32 44/44 1.5 Typ 33/32.5 51/51 5 8 Max dBm % dBm Units RF_in_GSM Vcc2G All specifications subject to change without notice 2 For additional information and latest specifications, see our website: www.triquint.com February 22, 2006 (Rev. E) TQM7M4006 DATASHEET 3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module Absolute Maximum Ratings Symbol VBAT IBAT VRAMP δ VSWR TC TSTG PIN ESD ruggedness All ports Supply Voltage DC Supply Current Power Control Voltage Duty Cycle at Max. Power Output Load Case Temperature, Operating Storage Temperature Input Power HBM per EIA/JESD22-A114 CDM per JESD22-C101 Parameter Absolute Maximum Value -0.5 to 5.5 2.5 -0.5 to VBAT 50 10:1 -20 to +100 -55 to +150 12 2000 2000 °C °C dBm V V Units VDC A V % Note: The part will survive over the full range specified for any individual input, while other parameters are nominal and with no RF input. Operating Parameters Parameter Supply Voltage- VBAT Supply Current- IBAT Band Select VoltageGSM DCS/PCS TX Enable Input Low High Leakage Current - IL Load Impedances- Z0 Case Temperature- TC -20 Vbs- L Vbs- H VTX_EN- L VTX_EN- H VTX_EN- L, VRAMP = 0.23V 0 1.2 0 1.2 1 50 +85 Conditions Min. 3.0 Typ/Nom 3.5 1.8 0.5 3.0 0.5 3.0 10 Max. 4.5 Units V A Vdc Vdc Vdc Vdc µA Ω °C All specifications subject to change without notice 3 For additional information and latest specifications, see our website: www.triquint.com February 22, 2006 (Rev. E) TQM7M4006 DATASHEET 3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module GSM850/GSM900 Mode Characteristics Standard Conditions: VBATT=3.5V, Vramp=1.6V, Pin=5 dBm, TX_EN = H, BS = L, TC = 25°C, Duty Cycle = 25%. Parameter Frequency Range- f GSM850 GSM900 Input Power for Pout max.- Pin Output Power- Pout Output Power Degradation Power Added Efficiency- η Power Control Voltage- VRAMP Power Control Range Input VSWR GSM850 Band GSM900 Band Conditions Min. 824 880 1.5 34.2 34.2 32.5 44 50 0.2 Typ/Nom Max. 849 915 Units MHz MHz dBm dBm dBm dBm % % 5.0 35.5 35.2 52 57 8.0 Vbatt=3.0V, Pin=5dBm, Tmin < TC