TQP13-N

Production Process 0.13 um D pHEMT Foundry Service Features 0.13 um pHEMT (TQP13-N) Process Cross-section • • • • • • Low cost Optical Lithography 0.13um Gate High Ft, ~95 GHz TQP13-N Low Noise, < 0.5 dB in Ku-band Interconnects: 2 layers (1 Airbridge & 1 local) High Value MIM Capacitor Resistors • Thin film resistor • Epi resistor 0.13 um pHEMT Device Cross-Section • • • Backside Vias High Volume 150 mm Wafers Same Baseline as Mass Production Today General Description TriQuint's TQP13-N process is a unique, low-cost 150mm wafer, optical lithography 0.13um pHEMT process used for low noise and medium power applications in Ku-band through V-band applications. The process features a highly repeatable 0.13um self-aligned gate pHEMT FET coupled with high density capacitors, epi resistors, thin film resistors (TFR), and 2 layers of gold interconnect. With typical Ft of 95 GHz, the process is used for V-band automotive radar and high frequency point to point radio applications. With typical NF < .5dB in Ku-band, the process is used for low cost LNB amplifier and convert blocks in consumer Direct Broadcast Satellite dish systems. Simple to use, repeatable and highly competitive TQP13-N is ideal for emerging consumer mmWave applications. Applications • • • • • • • DBS LNB and Down Convert Automotive Radar Satellite Communications Low Noise Point to Point/Point to Multipoint Radio LNA High Frequency Medium Power High Frequency Mixer Fiber Optic TIA and Driver, 10Gb/s - 40Gb/s Page 1 of 4; Rev 1.1 01/14/2008 Page 1 of 4; Rev 0.1 2/09/2004 Production Process 0.13 um D pHEMT Foundry Service TQP13-N Process Details Process Details (Typical Specifications) Element D-Mode pHEMT Parameter Vp (1uA/um) Idss Gm (max) Breakdown, Vds Ft @ 250mA/mm Imax (Vgs=0.7 V) NF (12 GHz) Value -0.3 100 750 8 (typical) 5.5 (min) 95 550 < 0.5 dB Units V mA/mm mS/mm V GHz mA/mm TQP13-N Common Process Element Details Gate Length Interconnect MIM Caps Resistors Value NiCr Epi Backside Vias Mask Layers No Backside Vias With BacksideVias 0.13 2 340 50 105 Yes 13 15 µm Metal Layers pF/mm2 Ohms/sq Ohms/sq Maximum Ratings Storage Temperature Range Operating Temperature Range -65 to +150 -55 to +150 Deg C Deg C TriQuint Semiconductor 2300 NE Brookwood Pkwy Hillsboro, Oregon 97124 Semiconductors for Communications www.triquint.com Pageageof4; RevRev 2.0 7/22/03 Page2 of of Rev1.1 01/14/2008 P 2 2 4; 5; 0.1 2/09/2004 Phone: 503-615-9000 Fax: 503-615-8905 Email: info@triquint.com Production Process 0.13 um D pHEMT Foundry Service TQP13-N Gm vs. Vgs TQP13-N TQP13-N Ft vs. Id Gm (mS/mm) TriQuint Semiconductor 2300 NE Brookwood Pkwy Hillsboro, Oregon 97124 Semiconductors for Communications www.triquint.com Pageageof4; RevRev 2.0 7/22/03 Page3 of of Rev1.1 01/14/2008 P 3 3 4; 5; 0.1 2/09/2004 Phone: 503-615-9000 Fax: 503-615-8905 Email: info@triquint.com Production Process 0.13 um D pHEMT Foundry Service TQP13-N Prototyping and Development • • Prototype Development Quickturn (PDQ): • Shared maskset • Standard Cycle Time Prototype Wafer Option (PWO): • Customer-specific Masks, Customer Schedule • 2 wafers delivered • Standard Cycle Time Training • GaAs Design Classes: • Half Day Introduction; Upon Request • Three Days Technical Training; Fall & Spring 0.13 um Lg at TriQuint Oregon facility Manufacturing Services • • • • • • • • • Mask Making Production 150 Wafer Fab Wafer Thinning Wafer Sawing Backside Vias DC Die Sort Testing RF On-Wafer Testing Plastic Packaging RF Packaged Part Testing Please contact your local TriQuint Semiconductor Representative/ Distributor or Foundry Services Division Marketing for Additional information: E-mail: sales@triquint.com; Phone: (503) 615-9000 Fax: (503) 615-8905 TriQuint Semiconductor 2300 NE Brookwood Pkwy Hillsboro, Oregon 97124 Semiconductors for Communications www.triquint.com Pageage 44; RevRev 2.0 7/22/03 P 4 of of 5; 1.1 01/14/2008 Phone: 503-615-9000 Fax: 503-615-8905 Email: info@triquint.com