1N4757A

1N4757A

  • 厂商:

    TRSYS

  • 封装:

  • 描述:

    1N4757A - GLASS PASSIVATED JUNCTION SILICON ZENER DIODE - Transys Electronics

  • 详情介绍
  • 数据手册
  • 价格&库存
1N4757A 数据手册
1N4741A THRU 1M200Z GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 1.0 Watt DO-41 FEATURES l l l l l l l Low profile package Built-in strain relief Glass passivated junction Low inductance Typical IR less than 5.0 A above 11V High temperature soldering : 260 /10 seconds at terminals Plastic package has Underwriters Laboratory Flammability Classification 94V-O MECHANICAL DATA Case: Molded plastic, DO-41 Epoxy: UL 94V-O rate flame retardant Lead: Axial leads, solderable per MIL-STD-202, method 208 guaranteed Polarity: Color band denotes cathode end Mounting position: Any Weight: 0.012 ounce, 0.3 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Peak Pulse Power Dissipation on TA=50 (Note A) Derate above 50 Peak forward Surge Current 8.3ms single half sine-wave superimposed on rated load(JEDEC Method) (Note B) Operating Junction and Storage Temperature Range NOTES: A. Mounted on 5.0mm2(.013mm thick) land areas. B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum. SYMBOL PD IFSM TJ,TSTG VALUE 1.0 6.67 10 -55 to +150 UNITS Watts mW/ Amps 1N4741A THRU 1M200Z *ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted) VF=1.2V max, IF=200mA for all types. Type No. Nominal Zener Test current IZT (Note 1.) Voltage Vz @ IZT mA volts (Notes2. And 3.) 23 11 1N4741A 21 12 1N4742A 19 13 1N4743A 17 15 1N4744A 15.5 16 1N4745A 14 18 1N4746A 12.5 20 1N4747A 11.5 22 1N4748A 10.5 24 1N4749A 9.5 27 1N4750A 8.5 30 1N4751A 7.5 33 1N4752A 7.0 36 1N4753A 6.5 39 1N4754A 6.0 43 1N4755A 5.5 47 1N4756A 5.0 51 1N4757A 4.5 56 1N4758A 4.0 62 1N4759A 3.7 68 1N4760A 1N4761A 75 3.3 1N4762A 82 3.0 1N4763A 91 2.8 1N4764A 100 2.5 1M110Z 110 2.3 1M120Z 120 2 1M130Z 130 1.9 1M150Z 150 1.7 1M160Z 160 1.6 1M180Z 180 1.4 1M200Z 200 1.2 Maximum Zener Impedance (Note 4.) ZZT @ IZT Ohms ZZk @ IZK Ohms IZK mA Leakage Current IR A Max VR Volts Surge Current @ TA=25 Ir - mA (Note 5.) 414 380 344 304 285 250 225 205 190 170 150 135 125 115 110 95 90 80 70 65 60 55 50 45 - 8.0 9.0 10 14 16 20 22 23 25 35 40 45 50 60 70 80 95 110 125 150 175 200 250 350 450 550 700 1000 1100 1200 1500 700 700 700 700 700 750 750 750 750 750 1000 1000 1000 1000 1500 1500 1500 2000 2000 2000 2000 3000 3000 3000 4000 4500 5000 6000 6500 7000 8000 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 8.4 9.1 9.9 11.4 12.2 13.7 15.2 16.7 18.2 20.6 22.8 25.1 27.4 29.7 32.7 35.8 38.8 42.6 47.1 51.7 56.0 62.2 69.2 76.0 83.6 91.2 98.8 114.0 121.6 136.8 152.0 NOTE: 1.Tolerance and Type Number Designation. The type numbers listed have a standard tolerance on the nominal zener voltage of ±5%. 2.Specials Available Include: A. Nominal zener voltages between the voltages shown and tighter voltage tolerances. B. Matched sets. 3.Zener Voltage (VZ) Measurement. Guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (TL) at 30 ±1 , from the diode body. 4.Zener Impedance (ZZ) Derivation. The zener impedance is derived from the 60 cycle ac voltage, which results when an ac current having an rms value equal to 10% of the dc zener current (IZT or IZK) is superimposed on IZT or IZK. 5.Surge Current (Ir) Non-Repetitive. The rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine wave pulse of 1/120 second duration superimposed on the test current, IZT, per JEDEC registration; however, actual device capability is as described in Figure 5. RATING AND CHARACTERISTICS CURVES 1N4741A THRU 1M200Z Fig. 1-POWER TEMPERATURE DERATING CUVE Fig. 2-TEMPERATURE COEFFICIENTS (-55 to +150 temperature range; 90% of the units are in the ranges indicated.) Fig. 3-TYPICAL THERMAL RESISTANCE versus LEAD LENGTH Fig. 4-EFFECT OF ZENER CURRENT RATING AND CHARACTERISTICS CURVES 1N4741A THRU 1M200Z Fig. 5-MAXIMUM SURGE POWER Fig. 6-EFFECT OF ZENER CURRENT ON ZENER IMPEDANCE Fig. 7-EFFECT OF ZENER VOLTAGE ON ZENER IMPEDANCE RATING AND CHARACTERISTICS CURVES 1N4741A THRU 1M200Z Fig. 9-TYPICAL CAPACITANCE versus Vz Fig. 8-TYPICAL LEAKAGE CURRENT Fig. 10-TYPICAL FORWARD CHARACTERISTICS
1N4757A
1. 物料型号: - 该文档描述了1N4741A至1M200Z型号的玻璃钝化结硅齐纳二极管。

2. 器件简介: - 这些器件为低轮廓封装,内置应力消除,玻璃钝化结,低电感,典型IR小于5.0A(11V以上)。 - 高温焊接:260摄氏度/10秒在端子处。 - 塑料封装具有UL 94V-0阻燃等级。

3. 引脚分配: - 轴向引脚,可焊性符合MIL-STD-202标准,方法208保证。 - 极性:色带表示阴极端。

4. 参数特性: - 最大额定值和电气特性在25℃环境温度下给出,除非另有说明。 - 峰值脉冲功率耗散(Po)1.0瓦特,超过50℃时需降额。 - 峰值正向浪涌电流(IFSM)10安培。

5. 功能详解: - 电气特性中提到,所有类型的二极管正向电压(VF)最大为1.2V,正向电流(IF)为200毫安。

6. 应用信息: - 这些齐纳二极管适用于需要稳定电压的应用。

7. 封装信息: - 封装为模塑塑料,DO-41封装。 - 尺寸以英寸和毫米给出,环氧树脂为UL 94V-0等级阻燃。 - 重量为0.012盎司或0.3克。
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