TR16

TR16 SERIES SILICON TRIACS l l l l l l High Current Triacs 16 A RMS Glass Passivated Wafer 400 V to 800 V Off-State Voltage 125 A Peak Current Max IGT of 50 mA (Quadrants 1 - 3) Pin 2 is in electrical contact with the mounting base. TO-220 PACKAGE (TOP VIEW) MT1 MT2 G 1 2 3 absolute maximum ratings over operating case temperature (unless otherwise noted) RATING TR16-400-125 Repetitive peak off-state voltage (see Note 1) TR16-600-125 TR16-700-125 TR16-800-125 Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note 2) Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3) Peak gate current Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds IT(RMS) ITSM IGM TC Tstg TL VDRM SYMBOL VALUE 400 600 700 800 16 125 ±1 -40 to +110 -40 to +125 230 A A A °C °C °C V UNIT NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at the rate of 400 mA/°C . 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETE R IDRM Repetitive peak off-state current Gate trigger current VD = rated VDRM Vsupply = +12 V† IGT Vsupply = +12 V† Vsupply = -12 V† Vsupply = -12 V† Vsupply = +12 V† VGT Gate trigger voltage On-state voltage Holding current Vsupply = +12 V† Vsupply = -12 V† Vsupply = -12 V† VT IH ITM = ±22.5 A Vsupply = +12 V† Vsupply = -12 V† TEST CONDITIONS IG = 0 RL = 1 0 W RL = 1 0 W RL = 1 0 W RL = 1 0 W RL = 1 0 W RL = 1 0 W RL = 1 0 W RL = 1 0 W IG = 50mA IG = 0 IG = 0 TC = 110°C tp(g) > 20 m s tp(g) > 20 m s tp(g) > 20 m s tp(g) > 20 m s tp(g) > 20 m s tp(g) > 20 m s tp(g) > 20 m s tp(g) > 20 m s (see Note 4) Init’ IT M = 100 mA Init’ IT M = -100 mA 12 -19 -16 34 0.8 -0.8 -0.8 0.9 ±1.4 22 -12 2 -2 -2 2 ±1.7 40 -40 V mA V MIN TYP MAX ±2 50 -50 -50 mA UNIT mA † All voltages are with respect to Main Terminal 1. NOTE 4: This parameter must be measured using pulse techniques, tp = £ 1 ms, duty cycle £ 2 %. Voltage-sensing contacts separate from the current carrying contacts are located within 3.2 mm from the device body. TR16 SERIES SILICON TRIACS electrical characteristics at 25°C case temperature (unless otherwise noted) (continued) PARAMETE R IL dv/dt dv/dt(c) di/dt Latching current Critical rate of rise of off-state voltage Critical rise of commutation voltage Critical rate of rise of on -state current Vsupply = +12 V† Vsupply = -12 V† VD = Rated VD VD = Rated VD di/dt = 0.5 IT(RMS)/ms VD = Rated VD diG/dt = 50 mA/m s IGT = 50 mA TEST CONDITIONS (see Note 5) IG = 0 TC = 110°C TC = 80°C IT = 1.4 IT(RMS) TC = 110°C ±1.2 ±400 ±9 ±100 MIN TYP MAX 80 -80 UNIT mA V/µs V/µs A/µs † All voltages are with respect to Main Terminal 1. NOTE 5: The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics: RG = 100 W , tp(g) = 20 m s, tr = £ 15 ns, f = 1 kHz. thermal characteristics PARAMETER Rq Rq JC JA MIN TYP MAX 1.9 62.5 UNIT °C/ W °C/ W Junction to case thermal resistance Junction to free air thermal resistance TYPICAL CHARACTERISTICS GATE TRIGGER CURRENT vs CASE TEMPERATURE 1000 10 GATE TRIGGER VOLTAGE vs CASE TEMPERATURE IGT - Gate Trigger Current - mA 100 10 VGT - Gate Trigger Voltage - V 1 1 Vsupply IGTM + + + + -40 -20 0 20 40 60 VAA = ± 12 V RL = 10 W t p(g) = 20 µs 80 100 120 Vsupply IGTM + + + + } VAA = ± 12 V RL = 1 0 W t p(g) = 20 µs 0 20 40 60 80 100 120 0·1 -60 0·1 -60 -40 -20 TC - Case Temperature - °C TC - Case Temperature - °C Figure 1. Figure 2. TR16 SERIES SILICON TRIACS TYPICAL CHARACTERISTICS HOLDING CURRENT vs CASE TEMPERATURE 100 1000 LATCHING CURRENT vs CASE TEMPERATURE IH - Holding Current - mA 10 IL - Latching Current - mA 100 1 Vsupply + 0·1 -60 -40 -20 0 20 VAA = ± 12 V IG = 0 Initiating I 40 60 TM 10 Vsupply IGTM + + + + -20 0 20 40 = 100 mA 80 100 120 1 -60 VAA = ± 12 V 60 80 100 120 -40 TC - Case Temperature - °C TC - Case Temperature - °C Figure 3. Figure 4.