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1N4448W

1N4448W

  • 厂商:

    TSC

  • 封装:

  • 描述:

    1N4448W - Fast Switching Surface Mount Diode - Taiwan Semiconductor Company, Ltd

  • 数据手册
  • 价格&库存
1N4448W 数据手册
1N4448W Fast Switching Surface Mount Diode Voltage Range 75 Volts 350m Watts Power Dissipation Features Fast switching speed Surface mount package ideally suited for automatic insertion For general purpose switching applications High conductance 0.053(1.35) Max. SOD-123 0.022(0.55) Typ. Min. Mechanical Data Case: SOD-123, Molded plastic Terminals: Solderable per MIIL-STD-202, Method 208 Polarity: Cathode Band Marking: Date Code and Type Code or Date Code only Type Code: T5 Weight: 0.01 gram (approx.) 0.006(0.15) Typ. Min. 0.152(3.85) 0.140(3.55) 0.112(2.85) 0.100(2.55) 0.010(0.25) Min. 0.067(1.70) 0.55(1.40) 0.004(0.10) Max. Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25℃ambient temperature unless otherwise specified. Maximum Ratings Type Number Symbol Value Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current (Note 1) Average Rectifier Output Current (Note 1) Non-Repetitive Peak Forward Surge Current @ t=1.0uS @ t=1.0S Power Dissipation (Note 1) Thermal Resistance Junction to Ambient Air (Note 1) Operating and Storage Temperature Range VRM VRRM VRWM VR VR(RMS) IFM Io IFSM Pd RθJA TJ, TSTG 100 75 53 500 250 4.0 2.0 350 357 -65 to + 150 Units V V V mA mA A mW K/W O C Electrical Characteristics Type Number Forward Voltage IF=5.0mA IF= 10mA IF =100mA IF=150mA Symbol VF Min 0.62 Max 0.72 0.855 1.0 1.25 2.5 50 30 25 4.0 4.0 Units V Peak Reverse Current VR=75V VR=75V, Tj=150℃ _ IR VR=25V, TJ=150℃ VR=20V _ Junction Capacitance VR=0, f=1.0MHz Cj _ Reverse Recovery Time (Note 2) trr Notes: 1. Valid Provided that Terminals are Kept at Ambient Temperature. 2. Reverse Recovery Test Conditions: IF=IR=10mA, Irr=0.1 x IR, RL=100Ω. uA nA pF nS - 830 - RATINGS AND CHARACTERISTIC CURVES (1N4448W) FIG.1- FORWARD CHAPACTERISTICS FIG.2- LEAKAGE CURRENT VS JUNCTION TEMPERATURE 1000 IF, INSTANTANEOUS FORWARD CURRENT (mA) 10000 IR, LEAKAGE CURRENT (nA) 100 1000 10 100 1 10 0.1 VR =20V 0.01 0 1 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 1 2 0 100 Tj, JUNCTION TEMPERATURE ( C) 200 FIG.3- ADMISSIBLE POWER DISSIPATION VS AMBIENT TEMPERATURE mW 500 400 300 Pd 200 100 50 0 0 100 Tamb 200 OC - 831 -
1N4448W 价格&库存

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1N4448W
  •  国内价格
  • 1+0.063
  • 100+0.0588
  • 300+0.0546
  • 500+0.0504
  • 2000+0.0483
  • 5000+0.04704

库存:1470

1N4448W
  •  国内价格
  • 1+0.07934
  • 30+0.07647
  • 100+0.07072
  • 500+0.06497
  • 1000+0.06209

库存:1075

1N4448W
    •  国内价格
    • 1+0.099
    • 100+0.0924
    • 300+0.0858
    • 500+0.0792
    • 2000+0.0759
    • 5000+0.07392

    库存:6624