1N4743A

1N4743A

  • 厂商:

    TSC

  • 封装:

  • 描述:

    1N4743A - Glass Passivated Junction Silicon Zener Diode - Taiwan Semiconductor Company, Ltd

  • 详情介绍
  • 数据手册
  • 价格&库存
1N4743A 数据手册
1N4741A THRU 1M200Z Glass Passivated Junction Silicon Zener Diode Voltage Range 11 to 200 Volts 1.0 Watts Peak Power Features Low profile package Built-in strain relief Glass passivated junction Low inductance Typical IR less than 5.0μA above 11V High temperature soldering guaranteed: 260OC / 10 seconds at terminals Plastic package has Underwriters Laboratory Flammability Classification 94V-0 DO-41 Mechanical Data Case: Molded plastic DO-41 Epoxy: UL 94V-O rate flame retardant Lead: Axial leads, solderable per MIL-STD-202, Method 2025 Polarity: Color Band denotes cathode end Mounting position : Any Weight: 0.012 ounces, 0.3 gram Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25℃ambient temperature unless otherwise specified. Type Number Symbol Value O 1.0 Peak Power Dissipation at TA=50 C, PD 6.67 Derate above 50 OC (Note 1) Peak Forward Surge Current, 8.3 ms Single Half IFSM 10.0 Sine-wave Superimposed on Rated Load (JEDEC method) (Note 2) TJ, TSTG -55 to + 150 Operating and Storage Temperature Range 2 Notes: 1. Mounted on 5.0mm (0.013mm thick) land areas. 2. Measured on 8.3ms Single Half Sine-wave or Equivalent Square Wave, Duty Cycle=4 Pulses Per Minute Maximum. Units Watts mW/ OC Amps O C - 818 - ELECTRICAL CHARACTERISTICS (TA=25OC Nominal Zener Voltage unless otherwise noted) VF=1.2V max, IF=200mA for all types. Surge Current @ TA = 25OC Ir - mA (Note 5) 414 380 344 304 285 250 225 205 190 170 150 135 125 115 110 95 90 80 70 65 60 55 50 45 - Test Device (Note 1) 1N4741A 1N4742A 1N4743A 1N4744A 1N4745A 1N4746A 1N4747A 1N4748A 1N4749A 1N4750A 1N4751A 1N4752A 1N4753A 1N4754A 1N4755A 1N4756A 1N4757A 1N4758A 1N4759A 1N4760A 1N4761A 1N4762A 1N4763A 1N4764A 1M110Z 1M120Z 1M130Z 1M150Z 1M160Z 1M180Z 1M200Z Vz @ Izt Voltage (Notes 2 & 3) 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 160 180 200 Current IZT mA 23 21 19 17 15.5 14.0 12.5 11.5 10.5 9.5 8.5 7.5 7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.7 3.3 3.0 2.8 2.5 2.3 2.0 1.9 1.7 1.6 1.4 1.2 Maximum Zener Impedance (Note 4) Leakage Current ZZT @ IZT Ohms 8 9 10 14 16 20 22 23 25 35 40 45 50 60 70 80 95 110 125 150 175 200 250 350 450 550 700 1000 1100 1200 1500 ZZK @ IZK Ohms mA 700 700 700 700 700 750 750 750 750 750 1000 1000 1000 1000 1500 1500 1500 2000 2000 2000 2000 3000 3000 3000 4000 4500 5000 6000 6500 7000 8000 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 IR @ VR uA Max Volts 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 8.4 9.1 9.9 11.4 12.2 13.7 15.2 16.7 18.2 20.6 22.8 25.1 27.4 29.7 32.7 35.8 38.8 42.6 47.1 51.7 56.0 62.2 69.2 76.0 83.6 91.2 98.8 114.0 121.6 136.8 152.0 Notes: 1. Tolerance and Type Number Designation. The type numbers listed have a standard tolerance on the nominal zener voltage of ±5%. 2. Specials Available Include: A. Nominal zener voltages between the voltages shown and tighter voltage tolerances. B. Matched sets. 3. Zener Voltage (VZ) Measurement. Guarantees the zener voltage when messured at 90 seconds while maintaining O O the lead temperature (TL) at 30 C± 1 C, from the diode body. 4. Zener Impedance (ZZ) Derivation. The zener impedance is derived from the 1000 cycle ac voltage, which results when an ac current having and rms value equal to 10% of the dc zener current (IZT or IZK) is superimposed on IZT or IZK. 5. Surge Current (Ir) Non-Repetitive. The rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine wave pulse of 1/120 second duration superimposed on the test current, IZT, per JEDEC registration; however, actual device capability is as described in Figure 10. 6. Additionnal measurement of Voltage group 9V1 to 75 at 95% Vzmin
1N4743A
物料型号: - 1N4741A至1M200Z,为玻璃钝化结硅齐纳二极管。

器件简介: - 这些器件是低轮廓封装、内置应力消除、玻璃钝化结、低电感的齐纳二极管,适用于高温焊接,符合UL 94V-0易燃性等级。

引脚分配: - 轴向引脚,符合MIL-STD-202方法2025的可焊性,色带表示阴极端。

参数特性: - 工作和储存温度范围:-55至+150摄氏度。 - 齐纳电压(Vz)在测试电流下的最大值为1.2V,测试电流为200mA。 - 峰值功率耗散在TA=50°C时为1.0瓦特,需在50°C以上时降额使用。 - 峰值正向浪涌电流为10.0安培(JEDEC方法)。

功能详解: - 齐纳二极管用于稳定电压,防止电压过高。 - 齐纳阻抗(ZZ)是从1000周期交流电压中得到的,当交流电流的均方根值等于直流齐纳电流(IZT或IZK)的10%时,叠加在IZT或IZK上。 - 浪涌电流(Ir)是非重复性的,最大峰值非重复性反向浪涌电流为1/2平方波或等效正弦波脉冲,持续时间为1/120秒,叠加在测试电流IZT上。

应用信息: - 这些齐纳二极管可用于电压稳定和过压保护。

封装信息: - 封装类型为塑封DO-41,环氧树脂:UL 94V-0级阻燃,尺寸以英寸和毫米表示。
1N4743A 价格&库存

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