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1N6263W

1N6263W

  • 厂商:

    TSC

  • 封装:

  • 描述:

    1N6263W - Surface Mount Schottky Barrier Diode - Taiwan Semiconductor Company, Ltd

  • 数据手册
  • 价格&库存
1N6263W 数据手册
1N6263W Surface Mount Schottky Barrier Diode Voltage Range 60 Volts 400m Watts Power Dissipation Features Low forward voltage drop Guard Ring Construction for Transient Protection Fast switching time Low Reverse Capacitance Surface mount package ideally suited for automatic insertion 0.053(1.35) Max. SOD-123 0.022(0.55) Typ. Min. 0.152(3.85) 0.140(3.55) 0.112(2.85) 0.100(2.55) Mechanical Data Case: SOD-123, Plastic Terminals: Solderable per MIIL-STD-202, Method 208 Polarity: Cathode Band Marking: Date Code and Type Code Type Code: SB Weight: 0.01 grams (approx.) 0.006(0.15) Typ. Min. 0.010(0.25) Min. 0.067(1.70) 0.55(1.40) 0.004(0.10) Max. Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25℃ambient temperature unless otherwise specified. Maximum Ratings Type Number Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current Non-Repetitive Peak Forward Surge Current @ t ≦1.0s @ t = 10mS Power Dissipation (Note 1) Thermal Resistance Junction to Ambient Air (Note 1) Operating and Storage Temperature Range Symbol VRRM VRWM VR VR(RMS) IF IFSM Pd RθJA TJ, TSTG Symbol V(BR) IR VF Cj trr Min 60 _ _ _ _ 1N6263W 60 42 15 50 2.0 400 375 -65 to + 175 Typ _ _ _ Units V V mA mA A mW K/W O C Max _ Electrical Characteristics Type Number Reverse Breakdown Voltage (Note 3) IR=10uA Reverse Leakage Current Forward Voltage Drop Junction Capacitance VR=50V IF=1.0mA IF=15mA VR=0, f=1.0MHz Units V nA 200 0.41 1.0 _ _ V pF nS Reverse Recovery Time (Note 2) 2.0 1.0 Notes: 1. Valid Provided that Terminals are Kept at Ambient Temperature. 2. Reverse Recovery Test Conditions: IF=IR=5.0mA, Irr=0.1 x IR, RL=100Ω. 3. Test Period < 3000uS. - 32 - RATINGS AND CHARACTERISTIC CURVES (1N6263W) FIG.1- TYPICAL FORWARD CHARACTERISTIC VARIATIONS FOR PRIMARY CONDUCTION FIG.2- TYP. JUNCTION CAPACITANCE VS REVERSE VOLTAGE mA 10 IF, INSTANTANEOUS FWD CURRENT (A) 5 2 pF 2 Tj =25 C O 1 5 2 Cj, JUNCTION CAPACITANCE (pA) 1 0.1 5 2 0.01 0 0.5 1V 0 0 10 20 30 40 50V VF, INSTANTANEOUS FWD VOLTAGE (V) VR, REVERSE VOLTAGE (V) FIG.3- TYPICAL REVERSE CHARACTERISTICS A 100 IR, INSTANTANEOUS REVERSE CURRENT (A) 5 2 125 OC 10 5 2 75 OC 1 5 2 0.1 5 2 25 OC 0.01 0 10 20 30 40 50V VR, REVERSE VOLTAGE (V) - 33 -
1N6263W 价格&库存

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