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B0530WRH

B0530WRH

  • 厂商:

    TSC

  • 封装:

  • 描述:

    B0530WRH - 410mW, Low VF SMD Schottky Barrier Diode - Taiwan Semiconductor Company, Ltd

  • 数据手册
  • 价格&库存
B0530WRH 数据手册
B0520LW,B0530W,B0540W 410mW, Low VF SMD Schottky Barrier Diode Small Signal Diode SOD-123 B Features Low power loss, high current capability, low VF Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code F C A D E G Dimensions A B C D E F G Unit (mm) Min 1.50 3.55 0.45 2.60 1.05 0.08 Max 1.70 3.85 0.65 2.80 1.25 0.15 Unit (inch) Min 0.059 0.140 0.018 0.102 0.041 0.003 Max 0.067 0.152 0.026 0.11 0.049 0.006 Mechanical Data Case : SOD-123 small outline plastic package Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed High temperature soldering guaranteed: 260°C/10s Polarity : Indicated by cathode band Weight :0.01 gram (approximately) 0.02 REF 0.50 REF Ordering Information Part No. B05xxW RH Package SOD-123 Packing 3 Kpcs / 7" Reel Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Repetitive Peak Reverse Voltage Reverse Voltage Repetitive Peak Forward Current Mean Forward Current Non-Repetitive Peak Forward Surge Current (Note 1) Thermal Resistance (Junction to Ambient) Junction and Storage Temperature Range (Note 2) Symbol PD VRRM VR IFRM IO IFSM RθJA TJ, TSTG 20 14 B0520LW B0530W 410 30 21 500 500 5.5 244 -65 to + 125 40 28 B0540W Units mW V V mA mA A °C/W °C Electrical Characteristics Type Number IR= 250μA Reverse Breakdown Voltage IR= 130μA IR= 20μA IF= 100mA IF= 500mA Forward Voltage IF= 100mA IF= 500mA VR= 10V VR= 15V VR= 20V Reverse Leakage Current VR= 30V VR= 40V VR= 10V VR= 20V VR= 40V Junction Capacitance Tj=25°C Tj=25°C Tj=100°C Tj=100°C Tj=25°C Tj=25°C Tj=25°C Tj=25°C Tj=25°C Tj=100°C Tj=100°C Tj=100°C CJ IR VF V(BR) Symbol B0520LW 20 0.300 0.385 0.220 0.330 75 250 5,0 8.0 B0530W 30 0.375 0.430 20 130 170 B0540W 40 0.510 0.620 0.460 0.610 10 20 5.0 13 pF mA μA V V Units IF= 1000mA Tj=25°C IF= 1000mA Tj=100°C VR=0V, f=1.0MHz Notes:1. Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method) Notes:2. Valid provided that electrodes are kept at ambient temperature Version : C09 B0520LW,B0530W,B0540W 410mW, Low VF SMD Schottky Barrier Diode Small Signal Diode Rating and Sharacteristic Curves FIG 1 Typical Forward Characteristics 10 1 FIG 2 Forward Current Derating Curve Io:Mean Forward Current (A) Instantaneous Forward Current (A) B0520LW B0540W 0.75 1 B0530W 0.5 0.1 Tj=25°C Pluse Width =300us 2% duty cycle 0 0.2 0.25 0.01 0 Instantaneous Forward Volatge (V) 0.4 0.6 0.8 1 1.2 1.4 1.6 0 25 Terminal Temperature (°C) 50 75 100 125 150 FIG 3 Admissible Power Dissipation Curve 500 1000 FIG 4 Typical Junction Capacitance 400 300 200 100 0 0 25 50 75 100 125 150 Junction Capacitance (pF) Power Dissipation (mW) 100 10 1 0 5 Ambient Temperature (°C) Reverse Volatge (V) Reverse Voltage (V) 10 15 20 25 Version : C09
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