BAS21SRFG

BAS21 / A / C / S 225mW SMD Switching Diode Small Signal Diode SOT-23 A F Features Fast switching speed Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code B E C D G Mechanical Data Case :SOT-23 small outline plastic package Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed High temperature soldering guaranteed: 260°C/10s Weight : 0.008gram (approximately) Marking Code : JS,JS2,JS3,JS4 Dimensions A B C D E F G Unit (mm) Min 2.80 1.20 0.30 1.80 2.25 0.90 Max 3.00 1.40 0.50 2.00 2.55 1.20 Unit (inch) Min 0.110 0.047 0.012 0.071 0.089 0.035 Max 0.118 0.055 0.020 0.079 0.100 0.043 0.550 REF 0.022 REF Pin Configuration BAS21 BAS21A BAS21C BAS21S Ordering Information Package Part No. Packing 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel Marking JS JS2 JS3 JS4 JS JS2 JS3 JS4 SOT-23 BAS21 RF SOT-23 BAS21A RF SOT-23 BAS21C RF SOT-23 BAS21S RF SOT-23 BAS21 RFG SOT-23 BAS21A RFG SOT-23 BAS21C RFG SOT-23 BAS21S RFG Suggested PAD Layout 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Repetitive Peak Reverse Voltage Repetitive Peak Forward Current Mean Forward Current Non-Repetitive Peak Forward Surge Current (Note 1) Thermal Resistance (Junction to Ambient) Junction and Storage Temperature Range (Note 2) Symbol PD VRRM IFRM IO IFSM RθJA TJ, TSTG Value 225 250 625 200 1 500 -55 to + 150 Units mW V mA mA A °C/W °C Notes:1. Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method) Pulse Width=1 μsec Notes:2. Valid provided that electrodes are kept at ambient temperature Version : C10 BAS21 / A / C / S 225mW SMD Switching Diode Small Signal Diode Electrical Characteristics Electrical Characteristics Type Number Reverse Breakdown Voltage Forward Voltage Reverse Leakage Current IR= IF= IF= VR= 100μA 100mA 200mA 200V f=1.0MHz Symbol V(BR) VF IR CJ Trr Min 250 Max 1.00 1.25 0.1 5 50.0 Units V V V μA pF ns VR=1V, Junction Capacitance Reverse Recovery Time IF=IR=10mA, RL=100Ω, IRR=1mA Tape & Reel specification TSC label Top Cover Tape Carieer Tape Any Additional Label (If Required) P0 d T A C B F W P1 E Item Carrier width Carrier length Carrier depth Sprocket hole Reel outside diameter Reel inner diameter Feed hole width Sprocke hole position Punch hole position Sprocke hole pitch Embossment center Overall tape thickness Tape width Reel width Symbol A B C d D D1 D2 E F P0 P1 T W W1 Dimension(mm) 3.15 ±0.10 2.77 ±0.10 1.22 ±0.10 1.50 ± 0.10 178 ± 1 55 Min 13.0 ± 0.20 1.75 ±0.10 3.50 ±0.05 4.00 ±0.10 2.00 ±0.05 0.229 ±0.013 8.10 ±0.20 12.30 ±0.20 W1 D D2 D1 Direction of Feed Version : C10 BAS21 / A / C / S 225mW SMD Switching Diode Small Signal Diode Rating and Sharacteristic Curves FIG 1 Typical Forward Characteristics Instantaneous Forward Current (mA) 1000 o FIG 2 Reverse Current vs Junction Temperature 100 10 Reverse Current (uA) 100 T Ta=25°Ca=25 C VR=200V 10 1 1 0.1 0.1 0.01 0 Instantaneous Forward Voltage (V) 0.3 0.6 0.9 1.2 0.01 1.8 2.1 0 40 80 120 160 200 1.5 Inataneous Forward Voltage (V) TJ,Junction Temperature (°C) FIG 3 Admissible Power Dissipation Curve 250 Power Dissipation (mW) 200 150 100 50 0 0 25 50 75 100 125 150 175 200 Ambient Temperature (°C) Version : C10