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BAV19WS

BAV19WS

  • 厂商:

    TSC

  • 封装:

  • 描述:

    BAV19WS - 410mW High Voltage SMD Switching Diode - Taiwan Semiconductor Company, Ltd

  • 详情介绍
  • 数据手册
  • 价格&库存
BAV19WS 数据手册
BAV19WS/BAV20WS/BAV21WS 410mW High Voltage SMD Switching Diode Small Signal Diode SOD-323F B Features Flat Lead SOD-323F small outline plastic package Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code C A D E F Mechanical Data Case : Flat lead SOD-323F small outline plastic package Terminal: Matte tin plated, solderable per MIL-STD-202, Method 208 guaranteed High temperature soldering guaranteed: 260°C/10s Polarity : Indicated by cathode band Weight : 4.85±0.5 mg Marking Code : S5, S6, S7 Dimensions (mm) A B C D E F Unit (mm) Min 1.15 2.30 0.25 1.60 0.80 0.05 Max 1.40 2.80 0.40 1.80 1.10 0.15 Unit (inch) Min Max 0.045 0.055 0.091 0.110 0.010 0.016 0.063 0.071 0.031 0.043 0.002 0.006 Ordering Information Part No. Package Packing Code RR RR RR RRG RRG RRG Packing 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel Marking S5 S6 S7 S5 S6 S7 BAV19WS SOD-323F BAV20WS SOD-323F BAV21WS SOD-323F BAV19WS SOD-323F BAV20WS SOD-323F BAV21WS SOD-323F Pin Configuration Suggested PAD Layout Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Repetitive Peak Reverse Voltage Average Rectified Forward Current Non-Repetitive Peak Forward Surge Current Pulse width= 1μs Pulse width= 1s Junction and Storage Temperature Range IFSM TJ, TSTG 2.5 0.5 -65 to + 150 A °C Symbol PD VRRM IF(AV) Value 200 250 200 Units mW V mA Note1. The suggested land pattern dimensions have been provided for reference only, as actual pad layouts may vary despending on application. Version : D10 BAV19WS/BAV20WS/BAV21WS 410mW High Voltage SMD Switching Diode Small Signal Diode Electrical Characteristics Type Number Breakdown Voltage Forward Voltage BAV19W BAV20W BAV21W (Note 2) Symbol VR VF Min 120 200 250 Max 1.00 1.25 100 5.0 50 Units V V Reverse Leakage Current Junction Capacitance Reverse Recovery Time IF= 100mA IF= 200mA BAV19W BAV20W (Note 3) BAV21W VR=0, f=1.0MHz (Note 4) IR CJ Trr nA pF ns Tape & Reel specification TSC label Top Cover Tape Carieer Tape Any Additional Label (If Required) Item Carrier depth Sprocket hole Reel outside diameter Reel inner diameter Feed hole width Sprocke hole position Punch hole position Sprocke hole pitch Embossment center Overall tape thickness Tape width Reel width Symbol K D A D1 D2 E F P0 P1 T W W1 Dimension(mm) 2.40 Max. 1.5 ± 0.1 178 ± 1 50 Min. 13.0 ± 0.5 1.75 ±0.10 3.50 ±0.05 4.00 ±0.10 2.00 ±0.10 0.6 Max. 8.30 Max. 14.4 Max W1 A D2 D1 User Direction of Feed Note 2: Test Condition : I R=100μA Note 3: Test Condition : BAV19WS @ V R=100V, BAV20WS @ V R=150V, BAV21WS @ V R=200V Note 4: Test Condition : I F=IR=30mA, RL=100Ω, IRR=3mA Note 5: A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be within 0.05 mm min. to 0.5 mm max. The component cannot rote more than 10° within the determined cavity. Note 6: If B1 exceeds 4.2 mm(0.165'') for 8 mm embossed tape, the tape may not feed through all tape feeders. Version : D10 BAV19WS/BAV20WS/BAV21WS 410mW High Voltage SMD Switching Diode Small Signal Diode Rating and Characteristic Curves FIG 1 Admissible Power Dissipation Curve 300 1000 FIG 2 Typical Forward Characterisics Power Dissipation (mW) 200 150 100 50 0 0 25 50 75 100 125 150 Forward Current (mA) 250 100 10 1 0.1 Tj=25°C 0.01 0 1 2 Ambient Temperature (°C) Forward Voltage (V) 100 FIG 3 Leakage Current vs Junction Temperature Leakage Current (uA) 10 1 0.1 0.01 0 100 200 Junction Temperature (℃) Version : D10
BAV19WS
1. 物料型号: - BAV19WS、BAV20WS、BAV21WS:这些是台湾半导体公司生产的小型信号二极管的型号。

2. 器件简介: - 这些是小型信号二极管,具体为410mW高电压表面贴装开关二极管,封装为SOD-323F。

3. 引脚分配: - 文档中提到极性由阴极带指示,具体引脚配置如下: - BAV19WS、BAV20WS、BAV21WS:均为SOD-323F封装,3K/7英寸卷装。

4. 参数特性: - 最大额定值: - 功率耗散(Pp):200mW - 重复峰值反向电压(VRRM):250V - 平均整流正向电流(IF(AV)):200mA - 非重复峰值正向浪涌电流(IFSM):2.5A(脉冲宽度=1us),0.5A(脉冲宽度=1s) - 结温和存储温度范围(TJ,TSTG):-65至+150°C - 电气特性: - 击穿电压(VR):BAV19W为120V,BAV20W为200V,BAV21W为250V - 正向电压(VF):在100mA时为1.00V,在200mA时为1.25V - 反向漏电流(IR):BAV19W小于100nA,BAV20W为100nA,BAV21W小于100nA - 结电容(CJ):小于5.0pF - 反向恢复时间(Tr):小于50ns

5. 功能详解: - 这些二极管主要用于高电压表面贴装开关应用,具有高功率耗散能力和高反向电压耐受性。

6. 应用信息: - 适用于需要高电压、高功率开关二极管的应用场合。

7. 封装信息: - SOD-323F:扁平引脚小型外型塑料封装。 - 包装代码:RR和RRG(RRG为无铅版本)。 - 标记代码:S5、S6、S7。
BAV19WS 价格&库存

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