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BAV70RF

BAV70RF

  • 厂商:

    TSC

  • 封装:

  • 描述:

    BAV70RF - 225mW SMD Switching Diode - Taiwan Semiconductor Company, Ltd

  • 数据手册
  • 价格&库存
BAV70RF 数据手册
BAW56, BAV70, BAV99 225mW SMD Switching Diode Small Signal Diode SOT-23 A F Features Fast switching speed Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code B E C D H G Dimensions A B C D E F G H Unit (mm) Min 2.80 1.20 0.30 1.80 2.25 0.90 0.08 Max 3.00 1.40 0.50 2.00 2.55 1.20 0.19 Unit (inch) Min 0.110 0.047 0.012 0.071 0.089 0.035 0.003 Max 0.118 0.055 0.020 0.079 0.100 0.047 0.010 Mechanical Data Case :SOT-23 small outline plastic package Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed High temperature soldering guaranteed: 260°C/10s Weight : 0.008gram (approximately) Marking Code : A1,A4,A7 0.550 REF 0.022 REF Pin Configuration BAW56 BAV70 BAV99 Ordering Information Package Part No. Packing 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel Marking A1 A4 A7 A1 A4 A7 SOT-23 BAW56 RF SOT-23 BAV70 RF SOT-23 BAV99 RF SOT-23 BAW56 RFG SOT-23 BAV70 RFG SOT-23 BAV99 RFG Suggested PAD Layout 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Repetitive Peak Reverse Voltage Repetitive Peak Forward Current Mean Forward Current Non-Repetitive Peak Forward Surge Current Pulse Width=1 sec Pulse Width=1 μsec Symbol PD VRRM IFRM IO IFSM RθJA TJ, TSTG Value 225 70 450 200 0.5 2 357 -55 to + 150 Units mW V mA mA A °C/W °C Thermal Resistance (Junction to Ambient) Junction and Storage Temperature Range Version : F10 BAW56, BAV70, BAV99 225mW SMD Switching Diode Small Signal Diode Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Type Number Reverse Breakdown Voltage Forward Voltage Reverse Leakage Current Junction Capacitance Reverse Recovery Time IR= IF= IF= VR= 100μA 50mA 150mA 70V Symbol V(BR) VF IR CJ Trr Min 70 Max 1.00 1.25 2.50 1.5 6.0 Units V V V μA pF ns VR= 0V, f=1.0MHz IF=IR=10mA, RL=100Ω, IRR=1mA Tape & Reel specification TSC label Top Cover Tape Carieer Tape Any Additional Label (If Required) P0 d T A C B F W P1 E Item Carrier width Carrier length Carrier depth Sprocket hole Reel outside diameter Reel inner diameter Feed hole width Sprocke hole position Punch hole position Sprocke hole pitch Embossment center Overall tape thickness Tape width Reel width Symbol A B C d D D1 D2 E F P0 P1 T W W1 Dimension(mm) 3.15 ±0.10 2.77 ±0.10 1.22 ±0.10 1.50 ± 0.10 178 ± 1 55 Min 13.0 ± 0.20 1.75 ±0.10 3.50 ±0.05 4.00 ±0.10 2.00 ±0.05 0.229 ±0.013 8.10 ±0.20 12.30 ±0.20 W1 D D2 D1 Direction of Feed Version : F10 BAW56, BAV70, BAV99 225mW SMD Switching Diode Small Signal Diode Rating and Characteristic Curves FIG 1 Typical Forward Characteristics Instantaneous Forward Current (mA) 1000 10000 100 FIG 2 Leakage Current vs Junction Temperature. VR=20V Typical Ta=25°C 10 Reverse Current (nA) 2 1000 1 100 0.1 10 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 1 0 20 40 60 80 100 120 140 160 180 200 Instantaneous Forward Voltage (V) Junction Temperature (oC) FIG 3 Power Dissipation Derating Curve 250 Power Dissipation (mW) 200 150 100 50 0 0 25 50 75 100 125 150 175 Ambient Temperature (°C) Version : F10
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