BC807-40

Pb RoHS RoHS COMPLIANCE BC807-16 BC807-25 BC807-40 0.3 Watts PNP Plastic-Encapsulate Transistors SOT-23 Features Ideally suited for automatic insertion Epitaxial planar die construction For switching, AF driver and amplifier applications Complementary NPN type available(BC817) Qualified to AEC-Q101 standards for high reliability Mechanical Data Case: SOT-23, Molded plastic Case material: molded plastic. UL flammability classification rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIIL-STD-202, Method 208 Lead free plating Marking: -16:5A, -25: 5B, -40: 5C Weight: 0.008 grams(approximate) Dimensions in inches and (millimeters) Maximum Ratings Type Number TA=25 C unless otherwise specified o Symbol VCBO VCEO IC PC VEBO ICBO ICEO IEBO VCE(sat) VBE(sat) fT BC807 -16 Collector-base breakdown voltage IC=-10uA, IE=0 Collector-emitter breakdown voltage IC=-10mA, IB=0 Collector current - continuous Power dissipation Emitter-base breakdown voltage IE=-1uA, IC=0 Collector cut-off current VCB=-45V IE=0 Collector cut-off current VCE=-40V IB=0 Emitter cut-off current VEB=-4V IC=0 Collector-emitter saturation voltage IC=-500mA, IB=-50mA Base-emitter saturation voltage IC=-500mA, IB=-50mA Transition frequency VCE=-5V IC=-10mA f=100MHz Operating and Storage Temperature Range Type Number DC current gain 807-16 807-25 807-40 VCE=-1V IC=-100mA TJ, TSTG Symbol HFE(1) BC807 BC807 -25 -40 -50 -45 -0.5 0.3 -5 -0.1 -0.2 -0.1 -0.7 -1.2 100 -55 to + 150 Units V V A W V uA uA uA V V MHz o C Min 100 160 250 Max 250 400 600 Units Version: B07 RATINGS AND CHARACTERISTIC CURVES(BC807-16, BC807-25, BC807-40) FIG.1- POWER DERATING CURVE 400 SEE NOTE1 1000 FIG.2- GAIN BANDWIDTH PRODUCT VS COLLECTOR CURRENT fT, GAIN BANDWIDTH PRODUCT (MHz) TA= 25 OC f = 20MHz PD, POWER DISSIPATION (mW) 300 -VCE= 5.0V 100 200 1V 100 0 0 50 100 150 200 10 1 10 100 1000 TSB, SUBSTRATE TEMPERATURE ( C) - IC, COLLECTOR CURRENT (mA) 1000 FIG.3-COLLECTOR SAT VOLTAGE VS COLLECTOR CURRENT FIG.4- DC CURRENT GAIN VS COLLECTOR CURRENT 1000 - VCE= 1V 150 0C hFE, DC CURRENT GAIN - IC, COLLECTOR CURRENT (mA) 100 -50 C 25 C O O 25 0C -50 0C 100 10 TYPICAL LIMITS O at TA = 25 C -IC / -IB = 10 150 C 1 O 0.1 0 0.1 0.2 0.3 0.4 - VCESAT, COLLECTOR SATURATION VOLTAGE (V) 0.5 10 0.1 1 10 100 - IC, COLLECTOR CURRENT (mA) 1000 500 FIG.5- TYPICAL EMITTER-COLLECTOR CHARACTERISTICS 3.2 2.8 2.4 100 FIG.6- TYPICAL EMITTER-COLLECTOR CHARACTERISTICS 0.4 0.35 80 400 2.0 1.8 1.6 - IC, COLLECTOR CURRENT (mA) - IC, COLLECTOR CURRENT (mA) 0.3 300 1.4 1.2 60 0.25 0.2 40 0.15 200 1.0 0.8 0.6 100 0.4 -I B = 0.2 mA 20 0.1 -I B = 0 .05 mA 0 0 0 1 - VCE, COLLECTOR-EMITTER VOLTAGE (V) 2 0 10 - VCE, COLLECTOR-EMITTER VOLTAGE (V) 20 Version:B07