BC817-16RF

BC817-16/-25/-40 300mW, NPN Small Signal Transistor Small Signal Diode Collector Base A Emitter SOT-23 F Features Low power loss, high current capability, low VF Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code C D G B E Mechanical Data Case : SOT- 23 small outline plastic package Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed High temperature soldering guaranteed: 260°C/10s Weight : 0.008gram (approximately) Dimensions A B C D E F G Unit (mm) Min 1.50 3.55 0.45 2.60 1.05 0.08 Max 1.70 3.85 0.65 2.80 1.25 0.15 Unit (inch) Min 0.059 0.140 0.018 0.102 0.041 0.003 Max 0.067 0.152 0.026 0.11 0.049 0.006 0.02 REF 0.50 REF Ordering Information Part No. BC817-16/-25/-40 RF Package SOT-23 Packing 3Kpcs/7" Reel Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Thermal Resistance (Junction to Ambient) Junction and Storage Temperature Range (Note 1) Symbol PD VCBO VCEO VEBO IC RθJA TJ, TSTG BC817-16 BC817-25 300 50 45 5 500 388 -55 to + 150 BC817-40 Units mW V V V mA °C/W °C Electrical Characteristics Type Number Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-offCurrent Base-Emitter saturation voltage Transition frequency Junction Capacitance IC= 10μA IC= 10mA IE= 1μA VCB= 45V VEB= 4V IC= 500mA IE= 0 IB= 0 IC= 0 IE= 0 IC= 0 IB= 50mA IB= 50mA Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) fT CJ hFE hFE 100 >40 BC817-16 BC817-25 50 45 5 0.1 0.1 0.7 1.2 100 10 >40 600 >40 BC817-40 Units V V V μA μA V V MHz pF Collector-Emitter saturation voltage IC= 500mA VCE= 5V IC= 10mA f= 100MHz VR=0V, f=1.0MHz VCE= 1V VCE= 1V IC= 100mA IC= 100mA DC current gain DC current gain 100-250 160-400 250-600 Notes:1. Valid provided that electrodes are kept at ambient temperature Version : C09 BC817-16/-25/-40 300mW, NPN Small Signal Transistor Small Signal Diode Rating and Sharacteristic Curves FIG 1 Typical Pulsed Current Gain vs Collector Current 10 10 FIG 2 Collector-Emitter Saturation Voltage vs Collector Current Ic, Collector Current (A) 1 25 C o Ic, Collector Current (mA) 1 0.1 25 C 0.1 o 0.01 VCE=5 0.001 0 100 200 300 400 500 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 hFE VCE(sat), Collector-Emitter Voltage (V) FIG 3 Base-Emitter Saturation Voltage vs Collector Current 1000 1 FIG 4 Base-Emitter on Voltage vs Collector Current Ic, Collector Current (mA) 25oC 100 Ic, Collector Current (A) 0.1 25o 10 0.01 1 0 0.2 Ambient Temperature (°C) 0.4 0.6 0.8 0.001 1.2 1.4 0 0.2 0.4 1 Reverse Voltage (V) 0.6 0.8 1 1.2 1.4 VBE(sat),Base-Emitter Voltage (V) FIG 5 Collector-Base Capacitance vs Collector-Base Voltage VBE(sat),Base-Emitter on Voltage (V) Collector-Base Capactiance (pF) 40 30 20 10 0 0 4 8 12 16 20 24 28 VCB,Collector-Base Voltage (V) Version : C09