BC817-16_10

BC817-16/-25/40 300mW, NPN Small Signal Transistor Small Signal Diode 3. 3 2 1 1. A F SOT-23 2. B E Features Low power loss, high current capability, low VF Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code Unit (mm) Dimensions A Min 2.80 1.20 0.30 1.80 2.25 0.90 0.08 Max 3.00 1.40 0.50 2.00 2.55 1.20 0.19 C D H Unit (inch) Min 0.110 0.047 0.012 0.071 0.089 0.035 0.003 Max 0.118 0.055 0.020 0.079 0.100 0.047 0.007 G Mechanical Data Case : SOT- 23 small outline plastic package Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed High temperature soldering guaranteed: 260°C/10s Weight : 0.008gram (approximately) B C D E F G H 0.550 REF 0.022 REF Ordering Information Packing Package Packing Code BC817-16/-25/-40 RF SOT-23 3K / 7" Reel Part No. BC817-16/-25/-40 RFG SOT-23 3K / 7" Reel Suggested PAD Layout 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Thermal Reistance (Junction to Ambient) Junction Temperature Storage Temperature Range Symbol PD VCBO VCEO VEBO IC RθJA TJ TSTG Value 300 50 45 5 500 388 150 -55 to + 150 Units mW V V V mA °C °C °C Electrical Characteristics Type Number Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current Collector-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency Junction Capacitance DC current gain DC current gain VCE= 5V IC= 10μA IC= 10mA IE= 1μA ICB= 45V VEB= 4V IC= 500mA IC= 500mA IC= 10mA VR= 0V VCE= 1V VCE= 1V IE=0 IB=0 IC=0 IE=0 IC=0 IB=50mA IB=50mA f=100MHz f=1.0MHz IC= 100mA IC= 100mA Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) fT CJ hFE hFE 100 >40 100-250 BC817-16 BC817-25 50 45 5 0.1 0.1 0.7 1.2 100 10 >40 160-400 600 >40 250-600 BC817-40 Units V V V μA μA V V MHz pF Notes: 1.The suggested land pattern dimensions have been provided for reference only, as actual pad layouts may vary despending on application. Version : F10 BC817-16/-25/-40 300mW, NPN Small Signal Transistor Small Signal Diode Rating and Characteristic Curves FIG 1 Typical Pulsed Current Gain vs Collector Current 10 10 FIG 2 Collector-Emitter Saturation Voltage vs Collector Current Ic, Collector Current (A) 1 25 C o Ic, Collector Current (mA) 1 0.1 25 C 0.1 o 0.01 VCE=5 0.001 0 100 200 300 400 500 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 hFE VCE(sat), Collector-Emitter Voltage (V) FIG 3 Base-Emitter Saturation Voltage vs Collector Current 1000 1 FIG 4 Base-Emitter on Voltage vs Collector Current Ic, Collector Current (mA) 25oC 100 Ic, Collector Current (A) 0.1 25o 10 0.01 1 0 0.2 Ambient Temperature (°C) 0.4 0.6 0.8 0.001 1.2 1.4 0 0.2 0.4 1 Reverse Voltage (V) 0.6 0.8 1 1.2 1.4 VBE(sat),Base-Emitter Voltage (V) FIG 5 Collector-Base Capacitance vs Collector-Base Voltage VBE(sat),Base-Emitter on Voltage (V) Collector-Base Capactiance (pF) 40 30 20 10 0 0 4 8 12 16 20 24 28 VCB,Collector-Base Voltage (V) Version : F10