BC817-40WRF

BC817-16W/25W/40W 200mW, NPN Small Signal Transistor Small Signal Diode SOT-323 3 Collector A F 1 Base 2 Emitter B E Features Epitaxial planar die construction Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code C D Mechanical Data Case : SOT-323 small outline plastic package Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed High temperature soldering guaranteed: 260°C/10s Weight : 0.005gram (approximately) Dimensions A B C D E F Unit (mm) Min 1.90 1.15 0.25 1.20 2.00 0.80 Max 2.10 1.35 0.35 1.40 2.20 1.00 Unit (inch) Min 0.075 0.045 0.010 0.047 0.079 0.031 Max 0.083 0.053 0.014 0.055 0.087 0.039 Ordering Information Package Part No. Packing 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel Marking 6CR 6CS 6CT 6CR 6CS 6CT SOT-323 BC817-16W RF SOT-323 BC817-25W RF SOT-323 BC817-40W RF SOT-323 BC817-16W RFG SOT-323 BC817-25W RFG SOT-323 BC817-40W RFG Suggested PAD Layout 0.65 0.026 1.6 0.063 0.8 0.031 0.8 0.031 Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Thermal Resistance,Junction to Ambient Junction and Storage Temperature Range 1)Transistor mounted on an FR4 printed-circuit board. Symbol PD VCBO VCEO VEBO IC RөJA TJ, TSTG Value 200 50 45 5 0.5 625 -65 to + 150 Units mW V V V A k/w °C Version : A11 BC817-16W/25W/40W 200mW, NPN Small Signal Transistor Small Signal Diode Electrical Characteristics Type Number Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current at-Ic=10uA at-Ic=10mA at-Ic=10uA at=VCB= 20V at=VCB= 20V,TJ=150℃ at=VEB= 5V at-VCE=1V,-Ic=100mA DC Current Gain at-VCE=1V,-Ic=500mA atIc=500mA IC= 10mA VCE= 5V -16W -25W -40W IB= 50mA f= 100MHz hFE 100 160 250 40 VCE(sat) fT 100 0.7 V MHz 250 400 600 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Min 50 45 5 Max 100 5 100 Units V V V nA uA nA Collector-Emitter saturation voltage Transition frequency Tape & Reel specification TSC label Top Cover Tape Carieer Tape Any Additional Label (If Required) P0 d T A C B P1 Item Carrier width Carrier length Carrier depth Sprocket hole Reel outside diameter Reel inner diameter Feed hole width Sprocke hole position Punch hole position Sprocke hole pitch Embossment center Overall tape thickness Tape width Reel width Symbol A B C d D D1 D2 E F P0 P1 T W W1 Dimension(mm) 3.15 ±0.10 2.77 ±0.10 1.22 ±0.10 1.50 ± 0.10 178 ± 1 55 Min 13.0 ± 0.20 1.75 ±0.10 3.50 ±0.05 4.00 ±0.10 2.00 ±0.05 0.229 ±0.013 8.10 ±0.20 12.30 ±0.20 E F W W1 D D2 D1 Direction of Feed Version : A11 BC817-16W/25W/40W 200mW, NPN Small Signal Transistor Small Signal Diode Rating and Characteristic Curves Version : A11 BC817-16W/25W/40W 200mW, NPN Small Signal Transistor Small Signal Diode Rating and Characteristic Curves Version : A11