BC847B

Pb RoHS RoHS COMPLIANCE BC846A,B BC847A,B,C BC848A,B,C 0.2 Watts NPN Plastic-Encapsulate Transistors SOT-23 Features Ideally suited for automatic insertion Epitaxial planar die construction For switching, AF driver and amplifier applications Complementary NPN type available(BC856) Qualified to AEC-Q101 standards for high reliability Mechanical Data Case: SOT-23, Molded plastic Case material: molded plastic. UL flammability classification rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIIL-STD-202, Method 208 Lead free plating Marking & Polarity: See diagram Weight: 0.008 gram (approx.) Maximum Ratings Type Number Dimensions in inches and (millimeters) TA=25 C unless otherwise specified o Symbol VCBO VCEO ICM PCM VEBO ICBO BC846 80 65 BC847 50 45 0.1 0.2 6 0.1 BC848 30 30 Units V V A W V uA Collector-base breakdown voltage IC=10uA, IE=0 Collector-emitter breakdown voltage IC=10mA, IB=0 Collector current o Power dissipation (Tamb=25 C) (Note 1) Emitter-base breakdown voltage Collector cut-off current IE=10uA, IC=0 VCB=70V IE=0 VCB=50V IE=0 VCB=30V IE=0 Collector cut-off current VCE=60V IB=0 VCE=45V IB=0 VCE=30V IB=0 Emitter cut-off current VEB=5V IC=0 Collector-emitter saturation voltage IC=100mA, IB=5mA Base-emitter saturation voltage IC=100mA, IB=5mA Base-emitter voltage VCE=5V IC=2mA VCE=5V IC=10mA Transition frequency VCE=5V IC=10mA f=100MHz Operating and Storage Temperature Range 0.1 0.1 0.1 ICEO IEBO VCE(sat) VBE(sat) VBE fT 0.1 0.1 0.1 0.5 1.1 700 770 100 -55 to + 150 uA uA V V mV MHz o C Type Number DC current gain BC846A,847A,848A BC846B,847B,848B VCE=5V IC=2mA BC847C / BC848C TJ, TSTG Symbol HFE(1) Min 110 200 420 Max 220 450 800 Units DEVICE MARKING BC846A=1A, BC846B=1B, BC847A=1E, BC847B=1F, BC847C=1G, BC848A=1J, BC848B=1K, BC848C=1L Note 1: Transistor mounted on an FR4 Printed-circuit board. Version: B07 RATINGS AND CHARACTERISTIC CURVES (BC846A, B ; BC847A, B, C ; BC848A, B, C) FIG.1- NORMALIZED DC CURRENT GAIN 2.0 1.0 FIG.2- "SATURATION" AND "ON" VOLTAGES 1.5 VCE= 10V TA= 25 C O 0.9 0.8 TA= 25 OC V BE(sat) @ IC 10 / IB = V =10 hFE, NORMALIZED DC CURRENT GAIN 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 V, VOLTAGE (VOLTS) 0.7 V BE(on) @ V CE 0.6 0.5 0.4 0.3 0.2 0.1 VCE(sat) @ IC / IB =10 0.2 0 .2 0 .5 1 2 5 10 20 50 100 200 IC, COLLECTOR CURRENT (mAdc) 0 0.1 00 .2 .3 0 .5 1 2 3 5 10 20 30 50 100 IC, COLLECTOR CURRENT (mAdc) FIG.3- COLLECTOR SATURATION REGION 2.0 1.8 0.8 FIG.4- BASE-EMITTER TEMPERATURE COEFFICIENT -55 OC to +125 OC TEMPERATURE COEFFICIENT (mV/ C) O VCE, COLLECTOR-EMITTER VOLTAGE (V) TA= 25 OC IC= 10 mA IC= 20 mA IC= 50 mA IC= 200 mA 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.02 1.2 1.6 IC= 100 mA 2.0 2.4 VB, 2.8 0.1 1.0 IB, BASE CURRENT (mA) 10 20 3.2 0.2 1.0 10 IC, COLLECTOR CURRENT (mA) 100 FIG.5- CAPACITANCES fT, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 10 9.0 8.0 7.0 6.0 400 FIG.6- CURRENT-GAIN - BANDWIDTH PRODUCT TA= 25 C O 300 VCE= 10V TA= 25 OC 200 C, CAPACITANCE (pF) 5.0 4.0 3.0 Cib 100 80 60 50 40 30 Cob 2.0 1.0 0.4 0.6 0.8 1.0 2.0 3.0 4.0 6.0 8.0 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) 20 0 .5 0 7 1.0 . 2.0 3.0 5.0 7.0 10 20 30 50 IC, COLLECTOR CURRENT (mAdc) Version: B07 RATINGS AND CHARACTERISTIC CURVES (BC846A, B ; BC847A, B, C ; BC848A, B, C) FIG.7- DC CURRENT GAIN 2.0 1.5 1.0 FIG.8- "ON" VOLTAGES VCE= 10V TA= 25 C O 0.9 0.8 TA= 25 OC =10 hFE, NORMALIZED DC CURRENT GAIN V, VOLTAGE (VOLTS) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 V BE(sat) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 @ IC / IB V V BE @ CE = 5.0 V VCE(sat) @ IC / IB =10 200 0.1 0 .2 0 .5 1 2 5 10 20 50 100 200 0 IC, COLLECTOR CURRENT (mA) 00 .2 .3 0 .5 1 2 3 5 10 20 30 50 100 IC, COLLECTOR CURRENT (mA) FIG.9- COLLECTOR SATURATION REGION 2.0 1.8 -1.0 FIG.10- BASE-EMITTER TEMPERATURE COEFFICIENT -55 OC to +125 OC TEMPERATURE COEFFICIENT (mV/ C) O TA= 25 OC -1.4 VCE, COLLECTOR-EMITTER VOLTAGE (V) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.02 IC= 10 mA IC= 20 mA IC= 50 mA IC= 100 mA IC= 200 mA -1.8 VB for VBE -2.2 VB, -2.6 0.1 1.0 IB, BASE CURRENT (mA) 10 20 -3.0 0.2 1.0 10 IC, COLLECTOR CURRENT (mA) 100 FIG.11- CAPACITANCES 40 FIG.12- CURRENT-GAIN - BANDWIDTH PRODUCT 1000 TA= 25 OC 20 fT, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) VCE= 5V 500 400 300 200 TA= 25 OC C, CAPACITANCE (pF) Cib 10 8.0 6.0 100 80 60 50 40 30 20 Cob 4.0 2.0 0.1 0.2 0.4 0.6 1.0 2.0 4.0 6.0 10 20 30 40 60 100 VR, REVERSE VOLTAGE (VOLTS) 10 0 01 . 1.0 2.0 5.0 10 20 50 100 1000 IC, COLLECTOR CURRENT (mA) Version: B07