BC848ARFG

BC846A/B, BC847A/B/C, BC848A/B/C 250mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A F 1 Base 2 Emitter B E C Features Epitaxial planar die construction Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code D Mechanical Data Case : SOT- 23 small outline plastic package Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed High temperature soldering guaranteed: 260°C/10s Weight : 0.008gram (approximately) Dimensions A B C D E F Unit (mm) Min 2.80 1.20 0.30 1.80 2.25 0.90 Max 3.00 1.40 0.50 2.00 2.55 1.20 Unit (inch) Min 0.110 0.047 0.012 0.071 0.089 0.035 Max 0.118 0.055 0.020 0.079 0.100 0.043 Ordering Information Package Part No. Packing 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel Marking 1A 1B 1E 1F 1G 1J 1K 1L 1A 1B 1E 1F 1G 1J 1K 1L SOT-23 BC846A RF SOT-23 BC846B RF SOT-23 BC847A RF SOT-23 BC847B RF SOT-23 BC847C RF SOT-23 BC848A RF SOT-23 BC848B RF SOT-23 BC848C RF SOT-23 BC846A RFG SOT-23 BC846B RFG SOT-23 BC847A RFG SOT-23 BC847B RFG SOT-23 BC847C RFG SOT-23 BC848A RFG SOT-23 BC848B RFG SOT-23 BC848C RFG Suggested PAD Layout 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction and Storage Temperature Range BC846 BC847 BC848 BC846 BC847 BC848 BC846 BC847 BC848 Symbol PD VCBO VCEO VEBO IC TJ, TSTG Value 250 80 50 30 65 45 30 6 6 5 0.1 -55 to + 150 Units mW V V V A °C Notes:1. Valid provided that electrodes are kept at ambient temperature Version : E11 BC846A/B, BC847A/B/C, BC848A/B/C 250mW, NPN Small Signal Transistor Small Signal Transistor Electrical Characteristics Type Number Collector-Base Breakdown Voltage BC846 BC847 BC848 BC846 BC847 BC848 BC846 BC847 BC848 IC= 10μA IC= 10mA IE= 1μA VCB= 30V VEB= 5V VCE= 5V IE= 0 IB= 0 IC= 0 IE= 0 IC=0 IC= 2mA Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Min 80 50 30 65 45 30 6 6 5 110 200 420 100 Max Units V Collector-Emitter Breakdown Voltage - V Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC current gain 15 0.1 220 450 800 0.5 1.1 - V nA μA BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C Collector-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency VCE= 5V IC= 100mA IB= 5mA IC= 100mA IB= 5mA IC= 10mA f= 100MHz V V MHz Tape & Reel specification TSC label Top Cover Tape Carieer Tape Any Additional Label (If Required) P0 d T A C B P1 Item Carrier width Carrier length Carrier depth Sprocket hole Reel outside diameter Reel inner diameter Feed hole width Sprocke hole position Punch hole position Sprocke hole pitch Embossment center Overall tape thickness Tape width Reel width Symbol A B C d D D1 D2 E F P0 P1 T W W1 Dimension(mm) 3.15 ±0.10 2.77 ±0.10 1.22 ±0.10 1.50 ± 0.10 178 ± 1 55 Min 13.0 ± 0.20 1.75 ±0.10 3.50 ±0.05 4.00 ±0.10 2.00 ±0.05 0.229 ±0.013 8.10 ±0.20 12.30 ±0.20 E F W W1 D D2 D1 Direction of Feed Version : E11 BC846A/B, BC847A/B/C, BC848A/B/C 250mW, NPN Small Signal Transistor Small Signal Transistor Rating and Characteristic Curves Figure1. Static Characteristic 100 Figure 2. DC Current Gain handbook, halfpage 400 MGT723 IC[mA], COLLECTOR CURRENT 80 IB = 400µA IB = 350µA IB = 300µA hFE (1) 300 60 IB = 250µA IB = 200µA (2) 40 IB = 150µA IB = 100µA 200 (3) 20 100 IB = 50µA 0 0 4 8 12 16 20 VCE[V], COLLECTOR-EMITTER VOLTAGE 0 10−1 1 10 102 I C (mA) 103 VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage handbook, halfpage V Figure 4. Base-Emitter On Voltage 100 IC[mA], COLLECTOR CURRENT 1200 BE (mV) 1000 MGT724 VCE = 2V (1) 10 800 (2) 600 (3) 1 400 200 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 10−1 VCE = 5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. 1 10 102 I C (mA) 103 VBE[V], BASE-EMITTER VOLTAGE fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT Figure 5. Collector Output Capacitance 100 Figure 6. Current Gain Bandwidth Product 1000 f=1MHz VCE =5V Cob[pF], CAPACITANCE 10 100 1 10 0.1 1 10 100 1000 1 0.1 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT Version : E11