BC856B

Pb RoHS RoHS COMPLIANCE BC856A,B BC857A,B,C BC858A,B,C 0.2 Watts PNP Plastic-Encapsulate Transistors SOT-23 Features Ideally suited for automatic insertion Epitaxial planar die construction For switching, AF driver and amplifier applications Complementary PNP type available(BC846) Qualified to AEC-Q101 standards for high reliability Mechanical Data Case: SOT-23, Molded plastic Case material: molded plastic. UL flammability classification rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIIL-STD-202, Method 208 Lead free plating Marking & Polarity: See diagram Weight: 0.008 gram (approx.) Dimensions in inches and (millimeters) Maximum Ratings Type Number TA=25 C unless otherwise specified o Symbol BC856 VCBO VCEO ICM PCM VEBO ICBO BC857 -50 -45 -0.1 0.2 -5 -0.1 BC858 -30 -30 Units V V A W V uA Collector-base breakdown voltage IC=10uA, IE=0 Collector-emitter breakdown voltage IC=10mA, IB=0 Collector current o Power dissipation (Tamb=25 C) (Note 1) Emitter-base breakdown voltage Collector cut-off current IE=10uA, IC=0 VCB=-70V IE=0 VCB=-45V IE=0 VCB=-25V IE=0 Collector cut-off current VCE=-60V IB=0 VCE=-40V IB=0 VCE=-25V IB=0 Emitter cut-off current VEB=-5V IC=0 Collector-emitter saturation voltage IC=-100mA, IB=-5mA Base-emitter saturation voltage IC=-100mA, IB=-5mA Transition frequency VCE=-5V IC=-10mA f=100MHz Operating and Storage Temperature Range -80 -65 -0.1 -0.1 -0.1 ICEO IEBO VCE(sat) VBE(sat) fT -0.1 -0.1 -0.1 -0.5 -1.1 100 -55 to + 150 uA uA V V MHz o C Type Number DC current gain BC846A,847A,848A BC846B,847B,848B VCE=-5V IC=-2mA BC847C / BC848C TJ, TSTG Symbol HFE(1) Min 125 220 420 Max 250 475 800 Units DEVICE MARKING BC856A=3A, BC856B=3B, BC857A=3E, BC857B=3F, BC857C=3G,BC858A=3J, BC858B=3K, BC858C=3L Note 1: Transistor mounted on an FR4 Printed-circuit board. Version: B07 RATINGS AND CHARACTERISTIC CURVES (BC856A,B/ BC857A,B,C/ BC858A,B,C) FIG.1- DC CURRENT GAIN AS A FUNCTION OF COLLECTOR CURRENT; TYPICAL VALUES. VCE= -5V -1000 500 -1200 FIG.2- BASE-EMITTER VOLTAGE AS A FUNCTION OF COLLECTOR CURRENT; TYPICAL VALUES. VCE= -5V O -55 C 400 Ta 300 mb = 150 O C -800 T amb= 200 Tam = 25 O b C VBE (mV) hFE 25 T amb= O C -600 O 0C = 15 T amb Tamb= -55 OC 100 -400 -200 0 -0.01 -0.1 -1 IC (mA) -10 -100 -1000 -0.01 0 -1000 -0.1 -1 IC (mA) -10 -100 -10000 FIG.3- COLLECTOR-EMITTER SATURATION VOLTAGE AS A FUNCTION OF COLLECTOR CURRENT; TYPICAL VALUES. IC / IB =20 -1200 FIG.4- BASE-EMITTER SATURATION VOLTAGE AS A FUNCTION OF COLLECTOR CURRENT; TYPICAL VALUES. IC / IB =20 -1000 T amb= -1000 -800 O Tamb= 150 C O C = 25 O -55 C VCEsat (mV) VBEsat (mV) 25 T amb= O C -600 T amb -100 O 0C = 15 T amb -400 O 5C = -5 T amb -200 -10 -0.1 -1 -10 IC (mA) -100 -1000 0 -0.1 -1 -10 IC (mA) -100 -1000 1000 FIG.5- DC CURRENT GAIN AS A FUNCTION OF COLLECTOR CURRENT; TYPICAL VALUES. VCE= -5V -1200 FIG.6- BASE-EMITTER VOLTAGE AS A FUNCTION OF COLLECTOR CURRENT; TYPICAL VALUES. VCE= -5V 800 -1000 O -55 C T amb= -800 600 VBE (mV) Ta hFE mb = 150 O C T amb= O 25 C -600 400 Tamb= 25 C O O 0C = 15 T amb -400 200 Tamb= -55 C O -200 0 -0.01 -0.1 -1 IC (mA) -10 -100 -1000 0 -0.01 -0.1 -1 IC (mA) -10 -100 -1000 Version: B07 RATINGS AND CHARACTERISTIC CURVES (BC856 A,B/ BC857A,B,C/ BC858A,B,C) FIG.7- COLLECTOR-EMITTER SATURATION VOLTAGE AS A FUNCTION OF COLLECTOR CURRENT; TYPICAL VALUES. FIG.8- BASE-EMITTER SATURATION VOLTAGE AS A FUNCTION OF COLLECTOR CURRENT; TYPICAL VALUES. IC / IB =20 IC / IB =20 -1000 O -55 C T amb= -10000 -1200 -1000 -800 VCEsat (mV) VBEsat (mV) O Tamb= 150 C T amb= O 25 C -600 T am -100 = 25 b O C O 0C = 15 T amb -400 O 5C = -5 T amb -200 -10 -0.1 -1 -10 IC (mA) -100 -1000 0 -0.1 -1 -10 IC (mA) -100 -1000 1000 FIG.9- DC CURRENT GAIN AS A FUNCTION OF COLLECTOR CURRENT; TYPICAL VALUES. Ta mb = -1200 FIG.10- BASE-EMITTER VOLTAGE AS A FUNCTION OF COLLECTOR CURRENT; TYPICAL VALUES. 800 150 O C VCE= -5V -1000 VCE= -5V T amb= O -55 C -800 600 VBE (mV) hFE Tam = 25 O b C 25 T amb= O C -600 O 0C = 15 T amb 400 Tamb= -55 OC 200 -400 -200 0 -0.01 -0.1 -1 IC (mA) -10 -100 -1000 0 -0.01 -0.1 -1 IC (mA) -10 -100 -1000 -10000 FIG.11- COLLECTOR-EMITTER SATURATION VOLTAGE AS A FUNCTION OF COLLECTOR CURRENT; TYPICAL VALUES. IC / IB =20 -1200 FIG.12- BASE-EMITTER SATURATION VOLTAGE AS A FUNCTION OF COLLECTOR CURRENT; TYPICAL VALUES. IC / IB =20 -1000 O -55 C T amb= -1000 -800 O Tamb= 150 C VCEsat (mV) VBEsat (mV) 25 T amb= O C -600 -100 T amb C = 25 O O 0C = 15 T amb -400 O 5C = -5 T amb -200 -10 -0.1 -1 -10 IC (mA) -100 -1000 0 -0.1 -1 -10 IC (mA) -100 -1000 Version: B07