BC858ARF

BC856A/B, BC857A/B/C, BC858A/B/C 250mW, PNP Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A F 1 Base 2 Emitter B E C Features Epitaxial planar die construction Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code D Mechanical Data Case : SOT- 23 small outline plastic package Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed High temperature soldering guaranteed: 260°C/10s Weight : 0.008gram (approximately) Dimensions A B C D E F Unit (mm) Min 2.80 1.20 0.30 1.80 2.25 0.90 Max 3.00 1.40 0.50 2.00 2.55 1.20 Unit (inch) Min 0.110 0.047 0.012 0.071 0.089 0.035 Max 0.118 0.055 0.020 0.079 0.100 0.043 Ordering Information Package Part No. Packing 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel Marking 3A 3B 3E 3F 3G 3J 3K 3L 3A 3B 3E 3F 3G 3J 3K 3L SOT-23 BC856A RF SOT-23 BC856B RF SOT-23 BC857A RF SOT-23 BC857B RF SOT-23 BC857C RF SOT-23 BC858A RF SOT-23 BC858B RF SOT-23 BC858C RF SOT-23 BC856A RFG SOT-23 BC856B RFG SOT-23 BC857A RFG SOT-23 BC857B RFG SOT-23 BC857C RFG SOT-23 BC858A RFG SOT-23 BC858B RFG SOT-23 BC858C RFG Suggested PAD Layout 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction and Storage Temperature Range BC856 BC857 BC858 BC856 BC857 BC858 Symbol PD VCBO VCEO VEBO IC TJ, TSTG Value 250 -80 -50 -30 -65 -45 -30 -5 -0.1 -55 to + 150 Units mW V V V A °C Notes:1. Valid provided that electrodes are kept at ambient temperature Version : E11 BC856A/B, BC857A/B/C, BC858A/B/C 250mW, PNP Small Signal Transistor Small Signal Transistor Electrical Characteristics Type Number Collector-Base Breakdown Voltage BC856 BC857 BC858 BC856 BC857 BC858 IC= -10μA IC= -10mA IE= -1μA VCB= -30V VEB= -5V VCE= -5V IE= 0 IB= 0 IC= 0 IE= 0 IC=0 IC= -2mA Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Min -80 -50 -30 -65 -45 -30 -5 125 220 420 100 Max Units V Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC current gain -15 -0.1 250 475 800 -0.65 -1.1 - V V nA μA BC856A, BC857A, BC858A BC856B, BC857B, BC858B BC857C, BC858C Collector-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency VCE= -5V IC= -100mA IB= -5mA IC= -100mA IB= -5mA IC= -10mA f= 100MHz V V MHz Tape & Reel specification TSC label Top Cover Tape Carieer Tape Any Additional Label (If Required) P0 d T A C B P1 Item Carrier width Carrier length Carrier depth Sprocket hole Reel outside diameter Reel inner diameter Feed hole width Sprocke hole position Punch hole position Sprocke hole pitch Embossment center Overall tape thickness Tape width Reel width Symbol A B C d D D1 D2 E F P0 P1 T W W1 Dimension(mm) 3.15 ±0.10 2.77 ±0.10 1.22 ±0.10 1.50 ± 0.10 178 ± 1 55 Min 13.0 ± 0.20 1.75 ±0.10 3.50 ±0.05 4.00 ±0.10 2.00 ±0.05 0.229 ±0.013 8.10 ±0.20 12.30 ±0.20 E F W W1 D D2 D1 Direction of Feed BC856A/B, BC857A/B/C, BC858A/B/C 250mW, PNP Small Signal Transistor Small Signal Transistor Rating and Characteristic Curves Figure 1. Static Characteristic -50 -45 1000 Figure 2. DC Current Gain IC[mA], COLLECTOR CURRENT -40 -35 -30 -25 -20 -15 -10 -5 -0 -0 -2 -4 -6 -8 IB = - 400µ A IB = - 350µA IB = - 250µA IB = - 200µA IB = - 150µA IB = - 100µA IB = - 50µA 10 -0.1 VCE = - 5V hFE, DC CURRENT GAIN IB = - 300µA 100 -10 -12 -14 -16 -18 -20 -1 -10 -100 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -10 -100 Figure 4. Base-Emitter On Voltage IC = 10 IB -1 V BE(sat) IC[mA], COLLECTOR CURRENT VCE = - 5V -10 -0.1 -1 VCE(sat) -0.01 -0.1 -0.1 -1 -10 -100 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 5. Collector Output Capacitance fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT Figure 6. Current Gain Bandwidth Product 1000 f=1MHz IE=0 f=1MHz IE=0 Cob[pF], CAPACITANCE 10 100 1 -1 -10 -100 10 -1 -10 VCB[V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT Version : E11 BC856A/B, BC857A/B/C, BC858A/B/C 250mW, PNP Small Signal Transistor Small Signal Transistor Rating and Characteristic Curves Figure 7. DC current gain as a function of collector current; typical values Figure 8. Base-emitter voltage as a function of collector current; typical values hFE-IC VBE-IC Version : E11