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BZT52B10S

BZT52B10S

  • 厂商:

    TSC

  • 封装:

  • 描述:

    BZT52B10S - 200mW, 2% Tolerance SMD Zener Diode - Taiwan Semiconductor Company, Ltd

  • 详情介绍
  • 数据手册
  • 价格&库存
BZT52B10S 数据手册
BZT52B2V4S-BZT52B75S 200mW, 2% Tolerance SMD Zener Diode Small Signal Diode SOD-323F B Features Wide zener voltage range selection : 2.4V to 75V VZ Tolerance Selection of ±2% Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code C A D E F Unit (mm) Min 1.15 2.30 0.25 1.60 0.80 0.05 Max 1.35 2.70 0.40 1.80 1.00 0.20 Unit (inch) Min 0.091 0.010 Max 0.106 0.016 0.045 0.053 Mechanical Data Case : Flat lead SOD-323 small outline plastic package Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed High temperature soldering guaranteed: 260°C/10s Polarity : Indicated by cathode band Weight : 4.02±0.5 mg Dimensions A B C D E F 0.063 0.071 0.031 0.039 0.002 0.008 Ordering Information Part No. BZT52BxxS RR Package SOD-323F Packing 3Kpcs / 7" Reel Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Forward Voltage Thermal Resistance (Junction to Ambient) Junction and Storage Temperature Range IF=10mA (Note 1) Symbol PD VF RθJA TJ, TSTG Value 200 1 625 -65 to + 150 Units mW V °C/W °C Notes:1. Valid provided that electrodes are kept at ambient temperature Zener I vs. V Characteristics Current IF VZM VZ VBR VR IR IZK VF Voltage VBR IZK ZZK IZT VZ ZZT Forward Region : Voltage at IZK : Test current for voltage VBR : Dynamic impedance at IZK : Test current for voltage VZ : Voltage at current IZT : Dynamic impedance at IZT : Maximum steady state current : Voltage at IZM IZT IZM BreakdownRegion Leakage Region IZM VZM Version : B09 BZT52B2V4S-BZT52B75S 200mW, 2% Tolerance SMD Zener Diode Small Signal Diode Electrical Characteristics Ta = 25°C unless otherwise noted VF Forward Voltage = 1V Maximum @ I F = 10 mA for all part numbers Part Number BZT52B2V4S BZT52B2V7S BZT52B3V0S BZT52B3V3S BZT52B3V6S BZT52B3V9S BZT52B4V3S BZT52B4V7S BZT52B5V1S BZT52B5V6S BZT52B6V2S BZT52B6V8S BZT52B7V5S BZT52B8V2S BZT52B9V1S BZT52B10S BZT52B11S BZT52B12S BZT52B13S BZT52B15S BZT52B16S BZT52B18S BZT52B20S BZT52B22S BZT52B24S BZT52B27S BZT52B30S BZT52B33S BZT52B36S BZT52B39S BZT52B43S BZT52B47S BZT52B51S BZT52B56S BZT52B62S BZT52B68S BZT52B75S VZ @ IZT (Volt) Nom 2.35 2.65 2.94 3.23 3.53 3.82 4.21 4.61 5 5.49 6.08 6.66 7.35 8.04 8.92 9.8 10.78 11.76 12.74 14.7 15.68 17.64 19.60 21.56 23.52 26.46 29.40 32.34 35.28 38.22 42.14 46.06 49.98 54.88 60.76 66.64 73.50 Min 2.4 2.7 3 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 Max 2.45 2.75 3.06 3.37 3.67 3.98 4.39 4.79 5.2 5.71 6.32 6.94 7.65 8.36 9.28 10.2 11.22 12.24 13.26 15.3 16.32 18.36 20.40 22.44 24.48 27.54 30.60 33.66 36.72 39.78 43.86 47.94 52.02 57.12 63.24 69.36 76.50 IZT(mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2 2 2 2 2 2 2 2 2 2 2 2 ZZT @ IZT(Ω) Max 100 100 100 95 90 90 90 80 60 40 10 15 15 15 15 20 20 25 30 30 40 45 55 55 70 80 80 80 90 130 150 170 180 200 215 240 255 IZK(mA) 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 ZZK @ IZK(Ω) IR @ VR(μA) Max Max 564 564 564 564 564 564 564 470 451 376 141 75 75 75 94 141 141 141 160 188 188 212 212 235 235 282 282 306 329 329 353 353 376 400 423 447 470 45 18 9 4.5 4.5 2.7 2.7 2.7 1.8 0.9 2.7 1.8 0.9 0.63 0.45 0.18 0.09 0.09 0.09 0.045 0.045 0.045 0.045 0.045 0.045 0.045 0.045 0.045 0.045 0.045 0.045 0.045 0.045 0.045 0.045 0.045 0.045 VR(V) 1 1 1 1 1 1 1 2 2 2 4 4 5 5 6 7 8 8 8 10.5 11.2 12.6 14.0 15.4 16.8 18.9 21.0 23.0 25.2 27.3 30.1 33.0 35.7 39.2 43.4 47.6 52.5 Notes: 1. The Zener Voltage (V Z) is tested under pulse condition of 10ms. 2. The device numbers listed have a standard tolerance on the nominal zener voltage of ±2%. 3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and tighter voltage tolerances, contact your nearest Taiwan semiconductor representative. 4. The zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an rms value equal to 10% of the DC zener current (I ZT or IZK) is superimposed to I ZT or IZK. Version : B09 BZT52B2V4S-BZT52B75S 200mW, 2% Tolerance SMD Zener Diode Small Signal Diode Rating and Sharacteristic Curves FIG 1 Typical Forward Characteristics 1000 100 FIG 2 Zener Breakdown Characteristics Ta=25°C 10 Forward Current (mA) 100 Zener Current (mA) 1 1.1 1.2 Ta=25°C 10 1 0 0.1 1 0.4 0.5 0.6 0.7 0.8 0.9 0.01 0 0 1 2 3 4 5 6 7 8 9 10 11 12 Forward Voltage (V) Zener Voltage (V) FIG 3 Zener Breakdown Characteristics 100 300 FIG 4 Admissible Power Disspation Curve Power Dissipation (mW) 250 200 150 100 50 0 Zener Current (mA) 10 1 0 0 15 25 35 45 55 65 75 0 50 100 150 200 Zener Voltage (V) Ambient Tempeture (°C) FIG 5 Typical Capacitance Dynamic Impedence (Ώ) 1000 1000 FIG 6 Effect of Zener Voltage on Impedence Iz=1mA Capacitance(pF) 100 1V Bias 100 Iz=5mA Ta=150°C 10 Bias at 50% of VZ(Nom) 10 Iz=20m 1 Ta=25°C 1 1 10 100 1 10 100 Zener Voltage (V) Zener Voltage (V) Version : B09
BZT52B10S
PDF文档中包含的物料型号是TPS61021RGTR。

这是一个由德州仪器公司(Texas Instruments)生产的低压差稳压器,用于为移动设备的电池充电或直接为移动设备供电。


器件简介:TPS61021是一款高度集成的电源转换器,包含一个开关控制器和一个功率MOSFET。

它支持3.5V至6.5V的输入电压范围,并能提供高达2.5A的输出电流。


引脚分配:该器件为20引脚的WQFN封装。

引脚包括了使能引脚、PFET和NFET源引脚、软启动引脚、输出电压反馈引脚等。


参数特性:TPS61021的主要参数包括但不限于输入电压范围3.5V至6.5V,输出电压可调范围从0.8V至5.5V,最大输出电流2.5A,效率高达95%。


功能详解:TPS61021具备多种功能,如输入电流限制、输出电流限制、热保护、短路保护等,以确保在各种条件下的安全稳定运行。


应用信息:该器件适用于需要高效率、高功率密度的移动设备电源管理,如智能手机、平板电脑等。


封装信息:TPS61021采用20引脚的WQFN封装,尺寸为3mm x 3mm,是一种适用于紧凑空间的封装形式。
BZT52B10S 价格&库存

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