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BZT52C10K

BZT52C10K

  • 厂商:

    TSC

  • 封装:

  • 描述:

    BZT52C10K - 200mW,Surface Mount Zener Diode - Taiwan Semiconductor Company, Ltd

  • 详情介绍
  • 数据手册
  • 价格&库存
BZT52C10K 数据手册
BZT52C2V4K~BZT52C75K 200mW,Surface Mount Zener Diode Small Signal Diode SOD-523F B Features Wide zener voltage range selection : 2.4V to 75V Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version,RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code C A D E F Unit (mm) Min 0.70 1.50 0.25 1.10 0.60 0.10 Max 0.90 1.70 0.40 1.30 0.70 0.14 Unit (inch) Min Max 0.028 0.035 0.059 0.067 0.010 0.016 0.043 0.051 0.024 0.028 0.004 0.006 Mechanical Data Case :SOD-523F small outline plastic package Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed High temperature soldering guaranteed:260°C/10s Polarity : Indicated by cathode band Weight :1.68±0.5 mg Dimensions A B C D E F Ordering Information Part No. Package code Package Packing BZT52C2V4K~75K RK SOD-523F 3K / 7" Reel BZT52C2V4K~75K RKG SOD-523F 3K / 7" Reel Pin Configutation Suggested PAD Layout Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Forward Voltage Thermal Resistance (Junction to Ambient) Junction and Storage Temperature Range I F=10mA (Note 1) Symbol PD VF RθJA TJ, TSTG Value 200 1 625 -55 to + 150 Units mW V °C/W °C Notes:1. Valid provided that electrodes are kept at ambient temperature Zener I vs. V Characteristics Current IF VZM VZ VBR VR IR IZK VF Voltage VBR IZK ZZK IZT VZ ZZT Forward Region : Voltage at IZK : Test current for voltage VBR : Dynamic impedance at IZK : Test current for voltage VZ : Voltage at current I ZT : Dynamic impedance at IZT : Maximum steady state current : Voltage at IZM IZT IZM BreakdownRegion Leakage Region IZM VZM Version : A11 BZT52C2V4K~BZT52C75K 200mW,Surface Mount Zener Diode Small Signal Diode Electrical Characteristics Ta = 25°C unless otherwise noted VF Forward Voltage = 1V Maximum @ IF = 10 mA for all part numbers Part Number BZT52C2V4K BZT52C2V7K BZT52C3V0K BZT52C3V3K BZT52C3V6K BZT52C3V9K BZT52C4V3K BZT52C4V7K BZT52C5V1K BZT52C5V6K BZT52C6V2K BZT52C6V8K BZT52C7V5K BZT52C8V2K BZT52C9V1K BZT52C10K BZT52C11K BZT52C12K BZT52C13K BZT52C15K BZT52C16K BZT52C18K BZT52C20K BZT52C22K BZT52C24K BZT52C27K BZT52C30K BZT52C33K BZT52C36K BZT52C39K BZT52C43K BZT52C47K BZT52C51K BZT52C56K BZT52C62K BZT52C68K BZT52C75K Notes: 1. The Zener Voltage ( VZ) is tested under pulse condition of 10ms 2. The device numbers listed have a standard tolerance on the nominal zener voltage of ±2%. 3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and tighter voltage tolerances, 4. The zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an rms value equal to 10% of the DC zener current Device Marking 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5D 5E 5F 5G 5H 5J 5K 5L 5M 5N 5P 5R 5S 5T 5U 5V 5X 5Y 5Z 5− 5= 5≡ 5> 5< VZ @ IZT (Volt) Nom 2.2 2.5 2.8 3.1 3.4 3.7 4 4.4 4.8 5.2 5.8 6.4 7 7.7 8.5 9.4 10.4 11.4 12.4 14.3 15.3 16.8 18.8 20.8 22.8 25.1 28 31 34 37 40 44 48 52 58 64 70 Min 2.4 2.7 3 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 Max 2.6 2.9 3.2 3.5 3.8 4.1 4.6 5 5.4 6 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.8 17.1 19.1 21.2 23.3 25.6 28.9 32 35 38 41 46 50 54 60 66 72 79 IZT(mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2 2 2 2 2 2 2 2 2 2 2 2 ZZT @ IZT(Ω) Max 100 100 100 95 90 90 90 80 60 40 10 15 15 15 15 20 20 25 30 30 40 45 55 55 70 80 80 80 90 130 150 170 180 200 215 240 255 IZK(mA) 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 ZZK @ IZK(Ω) IR @ VR(μA) Max Max 1000 1000 1000 1000 1000 1000 1000 800 500 200 100 160 160 160 160 160 160 80 80 80 80 80 100 100 120 300 300 300 500 500 500 500 500 500 500 500 500 50 20 10 5 5 3 3 3 2 1 3 2 1 0.7 0.2 0.1 0.1 0.1 0.1 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 VR(V) 1 1 1 1 1 1 1 2 2 2 4 4 5 5 7 8 8 8 8 10.5 11.2 12.6 14 15.4 16.8 18.9 21 23.2 25.2 27.3 30.1 32.9 35.7 39.2 43.4 47.6 52.5 Version : A11 BZT52C2V4K~BZT52C75K 200mW,Surface Mount Zener Diode Small Signal Diode Rating and Sharacteristic Curves Version : A11
BZT52C10K
### 物料型号 - 型号:BZT52C2V4K~BZT52C75K - 描述:200mW表面贴装Zener二极管

### 器件简介 - 类型:小信号二极管 - 封装:SOD-523F(小外型塑料封装)

### 引脚分配 - 极性:由阴极带指示 - 引脚配置: - BZT52C2V4K-75K:RK(SOD-523F封装,3K/7"卷轴包装) - BZT52C2V4K-75K:RKG(SOD-523F封装,3K/7"卷轴包装,绿色化合物,无卤素)

### 参数特性 - 最大额定值: - 功率耗散:200mW - 正向电压:1V(在10mA时) - 热阻(结到环境):根据注1 - 结和存储温度范围:-55到+150°C

- 电气特性(Ta = 25°C除非另有说明): - 正向电压(VF)= 1V最大值@ IF = 10 mA(所有型号) - Zener电压(VZ)和对应的测试电流(IZT)、动态阻抗(ZZK)、最大稳态电流(IZM)和Zener电压(VZM)等参数随不同型号变化。

### 功能详解 - 特性: - 宽Zener电压范围选择:2.4V至75V - 表面安装设备类型 - 湿度敏感性等级1 - 铅完成Matte Tin(Sn),镍底板Nickel(Ni)下层 - Pb免费版本,RoHS合规 - 绿色化合物(无卤素),包装代码后缀"G"和日期代码前缀"G"

### 应用信息 - 建议的PAD布局:文档中提供了建议的PAD布局图。

### 封装信息 - 封装:SOD-523F小外型塑料封装 - 终端:无铅,按MIL-STD-202,方法208保证可焊性 - 高温焊接保证:260°C/10s
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