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BZT52C4V3S

BZT52C4V3S

  • 厂商:

    TSC

  • 封装:

  • 描述:

    BZT52C4V3S - 200mW, 5% Tolerance SMD Zener Diode - Taiwan Semiconductor Company, Ltd

  • 详情介绍
  • 数据手册
  • 价格&库存
BZT52C4V3S 数据手册
BZT52C2V4S-BZT52C75S 200mW, 5% Tolerance SMD Zener Diode Small Signal Diode SOD-323F B Features Wide zener voltage range selection : 2.4V to 75V VZ Tolerance Selection of ±5% Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code C A D E F Unit (mm) Min 1.15 2.30 0.25 1.60 0.80 0.05 Max 1.35 2.70 0.40 1.80 1.00 0.20 Unit (inch) Min 0.091 0.010 Max 0.106 0.016 0.045 0.053 Mechanical Data Case : Flat lead SOD-323 small outline plastic package Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed High temperature soldering guaranteed: 260 °C/10s Polarity : Indicated by cathode band Weight : 4.02±0.5 mg Dimensions A B C D E F 0.063 0.071 0.031 0.039 0.002 0.008 Ordering Information Part No. BZT52CxxS RR Package SOD-323F Packing 3Kpcs/7" Reel Maximum Ratings and Electrical Characteristics Rating at 25 °C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Forward Voltage Thermal Resistance (Junction to Ambient) Junction and Storage Temperature Range IF=10mA (Note 1) Symbol PD VF RθJA TJ, TSTG Value 200 1 625 -65 to + 150 Units mW V °C/W °C Notes:1. Valid provided that electrodes are kept at ambient temperature Zener I vs. V Characteristics Current IF VZM VZ VBR VR IR IZK VF Voltage VBR IZK ZZK IZT VZ ZZT Forward Region : Voltage at I ZK : Test current for voltage V BR : Dynamic impedance at I ZK : Test current for voltage V Z : Voltage at current I ZT : Dynamic impedance at I ZT : Maximum steady state current : Voltage at I ZM IZT IZM BreakdownRegion Leakage Region IZM VZM Version : C09 BZT52C2V4S-BZT52C75S 200mW, 5% Tolerance SMD Zener Diode Small Signal Diode Electrical Characteristics Ta = 25°C unless otherwise noted VF Forward Voltage = 1V Maximum @ IF = 10 mA for all part numbers Part Number BZT52C2V4S BZT52C2V7S BZT52C3V0S BZT52C3V3S BZT52C3V6S BZT52C3V9S BZT52C4V3S BZT52C4V7S BZT52C5V1S BZT52C5V6S BZT52C6V2S BZT52C6V8S BZT52C7V5S BZT52C8V2S BZT52C9V1S BZT52C10S BZT52C11S BZT52C12S BZT52C13S BZT52C15S BZT52C16S BZT52C18S BZT52C20S BZT52C22S BZT52C24S BZT52C27S BZT52C30S BZT52C33S BZT52C36S BZT52C39S BZT52C43S BZT52C47S BZT52C51S BZT52C56S BZT52C62S BZT52C68S BZT52C75S VZ @ IZT (Volt) Nom 2.28 2.57 2.85 3.14 3.42 3.71 4.09 4.47 4.85 5.32 5.89 6.46 7.11 7.79 8.65 9.50 10.45 11.40 12.35 14.25 15.20 17.10 19.00 20.90 22.80 25.65 28.50 31.35 34.20 37.05 40.85 44.65 48.45 53.20 58.90 64.60 71.25 Min 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 Max 2.52 2.84 3.15 3.47 3.78 4.10 4.52 4.94 5.36 5.88 6.51 7.14 7.86 8.61 9.56 10.50 11.55 12.60 13.65 15.75 16.80 18.90 21.00 23.10 25.20 28.35 31.50 34.65 37.80 40.95 45.15 49.35 53.55 58.80 65.10 71.40 78.75 IZT(mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2 2 2 2 2 2 2 2 2 2 2 2 ZZT @ IZT(Ω) Max 100 100 100 95 90 90 90 80 60 40 10 15 15 15 15 20 20 25 30 30 40 45 55 55 70 80 80 80 90 130 150 170 180 200 215 240 255 IZK(mA) 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 ZZK @ IR @ VR(μ IZK(Ω) Max A) Max 564 564 564 564 564 564 564 470 451 376 141 75 75 75 94 141 141 141 160 188 188 212 212 235 235 282 282 306 329 329 353 353 376 400 423 447 470 45 18 9 4.5 4.5 2.7 2.7 2.7 1.8 0.9 2.7 1.8 0.9 0.63 0.45 0.18 0.09 0.09 0.09 0.045 0.045 0.045 0.045 0.045 0.045 0.045 0.045 0.045 0.045 0.045 0.045 0.045 0.045 0.045 0.045 0.045 0.045 VR(V) 1 1 1 1 1 1 1 2 2 2 4 4 5 5 6 7 8 8 8 10.5 11.2 12.6 14.0 15.4 16.8 18.9 21.0 23.0 25.2 27.3 30.1 33.0 35.7 39.2 43.4 47.6 52.5 Notes: 1. The Zener Voltage (V Z) is tested under pulse condition of 10ms. 2. The device numbers listed have a standard tolerance on the nominal zener voltage of ±5%. 3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and tighter voltage tolerances, contact your nearest Taiwan semiconductor representative. 4. The zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an rms value equal to 10% of the DC zener current (I ZT or IZK) is superimposed to I ZT or IZK. Version : C09 BZT52C2V4S-BZT52C75S 200mW, 5% Tolerance SMD Zener Diode Small Signal Diode Rating and Sharacteristic Curves FIG 1 Typical Forward Characteristics 1000 100 FIG 2 Zener Breakdown Characteristics Ta=25°C 10 Forward Current (mA) 100 Zener Current (mA) 1 1.1 1.2 Ta=25°C 10 1 0 0.1 1 0.4 0.5 0.6 0.7 0.8 0.9 0 0.01 0 1 2 3 4 5 6 7 8 9 10 11 12 Forward Voltage (V) Zener Voltage (V) FIG 3 Zener Breakdown Characteristics 100 300 FIG 4 Admissible Power Disspation Curve Power Dissipation (mW) 250 200 150 100 50 0 Zener Current (mA) 10 1 0 0 15 25 35 45 55 65 75 0 50 100 150 200 Zener Voltage (V) Ambient Tempeture (°C) FIG 5 Typical Capacitance Dynamic Impedence (Ώ) 1000 1000 FIG 6 Effect of Zener Voltage on Impedence Iz=1mA Capacitance(pF) 100 1V Bias 100 Ta=150°C Iz=5mA 10 Bias at 50% of VZ(Nom) 10 Iz=20m 1 Ta=25°C 1 1 10 100 1 10 100 Zener Voltage (V) Zener Voltage (V) Version : C09
BZT52C4V3S
1. 物料型号: - 型号:BZT52CxxS RR - 封装:SOD-323F - 包装:3Kpcs/7" Reel

2. 器件简介: - 该器件为小信号二极管,具体为SMD封装的Zener二极管,具有200mW功率和±5%的公差。

3. 引脚分配: - 极性由阴极带指示,引脚为无铅的亚锡镀层,符合MIL-STD-202标准,可焊性保证。

4. 参数特性: - 工作温度:除非另有规定,否则为25°C环境温度。 - 最大额定值和电气特性: - 功率耗散:200mW - 正向电压:在10mA时为1V最大 - 热阻(结到环境):625°C/W - 结和储存温度范围:-65至+150°C

5. 功能详解应用信息: - 该器件具有宽范围的齐纳电压选择(2.4V至75V),并且符合无铅和RoHS标准。 - 齐纳二极管用于稳定电压,保护电路免受过电压损害。

6. 封装信息: - 封装类型:扁平引脚SOD-323小型外型塑料封装。 - 高温焊接保证:260°C/10s。 - 重量:4.02±0.5 mg。
BZT52C4V3S 价格&库存

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