BZX55-C51

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封装：
描述：
BZX55-C51 - 500mW Zener Diode - Taiwan Semiconductor Company, Ltd

数据手册：

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数据手册
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BZX55-C51 数据手册

BZX55C SERIES Pb RoHS RoHS COMPLIANCE 500mW Zener Diode DO-35 Features Fast switching speed General purpose rectification Silicon epitaxial planar construction Mechanical Data Case: DO-35 Leads:Solderableper MIL-STD-202, Method 208 Polarity: Cathode band Marking: Type number Weight: 0.13 grams (approx.) Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 OC ambient temperature unless otherwise specified. Maximum Ratings Type Number Forward Voltage Power Dissipation (Note 1) Thermal Resistance Junction to Ambient Air (Note 2) Operating and Storage Temperature Range @ IF = 100mA Symbol VF Pd RθJA TJ, TSTG Value 1.0 500 0.3 -65 to + 175 Units V mW K /mW O C Notes: 1. Valid Provided that Lead are kept at ambient temperature at a distance of 8mm from case. 2. Valid provided that leads at a distance of 10mm from case are kept at ambient temperature. Version: A07 RATINGS AND CHARACTERISTIC CURVES (BZX55C SERIES) CHANGES IN THE POWER DISSIPATION DUE TO THE AMBIENT TEMPERATURE LEAD TEMPERATURE. (0C) AMBIENT TEMPERATURE Version: A07 ELECTRICAL CHARACTERISTICS (TA=25OC Device Type BZX55-C2V2 BZX55-C2V4 BZX55-C2V7 BZX55-C3V0 BZX55-C3V3 BZX55-C3V6 BZX55-C3V9 BZX55-C4V3 BZX55-C4V7 BZX55-C5V1 BXZ55-C5V6 BZX55-C6V2 BZX55-C6V8 BZX55-C7V5 BZX55-C8V2 BZX55-C9V1 BZX55-C10 BZX55-C11 BZX55-C12 BZX55-C13 BZX55-C15 BZX55-C16 BZX55-C18 BZX55-C20 BZX55-C22 BZX55-C24 BZX55-C27 BZX55-C30 BZX55-C33 BZX55-C36 BZX55-C39 BZX55-C43 BZX55-C47 BZX55-C51 unless otherwise noted) Maximum Typical Nominal Zener Voltage Maximum Reverse Regulator Temp. Maximum Zener IZT Vz at Izt Current Impedance Current Coefficient ZZK @ IZK ZZT @ IZT IR VR(suffix B) IzM % / OC Min (V) Max (V) mA Ohms Ohms mA uA V mA 2.09 2.28 2.5 2.8 3.1 3.4 3.7 4.0 4.4 4.8 5.2 5.8 6.4 7.0 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1 28 31 34 37 40 44 48 2.31 2.56 2.9 3.2 3.5 3.8 4.1 4.6 5.0 5.4 6.0 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 28.9 32 35 38 41 46 50 54 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 2.5 2.5 2.5 2.5 85 85 85 85 85 85 85 75 60 35 25 10 8 7 7 10 15 20 20 26 30 40 50 55 55 80 80 80 80 80 90 90 110 125 600 600 600 600 600 600 600 600 600 550 450 200 150 50 50 50 70 70 90 110 110 170 170 220 220 220 220 220 220 220 500 600 700 700 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 50 50 10 4.0 2.0 2.0 2.0 1.0 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 3.0 5.0 6.0 7.0 7.5 8.5 9.0 10 11 12 14 15 17 18 20 22 24 27 30 33 36 39 165.0 150.0 135.0 125.0 115.0 105.0 95.0 90.0 85.0 80.0 70.0 64.0 58.0 53.0 47.0 43.0 40.0 36.0 32.0 29.0 27.0 24.0 21.0 20.0 18.0 16.0 14.0 13.0 12.0 11.0 10.0 9.2 8.5 7.5 -0.070 -0.070 -0.070 -0.070 -0.065 -0.060 -0.050 -0.025 -0.010 +0.015 +0.025 +0.035 +0.045 +0.050 +0.050 +0.060 +0.070 +0.070 +0.070 +0.070 +0.070 +0.070 +0.070 +0.070 +0.070 +0.080 +0.080 +0.080 +0.080 +0.080 +0.080 +0.080 +0.080 +0.080 Notes: 1. Valid provided that device terminals are kept at ambient temperature. 2. Tested with pulses, 300us pulse width, period = 5ms. 3. f = 1KHz. Version: A07

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BZX55-C51

1. 物料型号： - 型号：BZX55C系列 - 封装：DO-35 - 功率：500mW Zener Diode

2. 器件简介： - 该器件采用硅外延平面结构，主要用于一般用途的整流和快速开关。

3. 引脚分配： - 引脚：可焊性引脚，符合MIL-STD-202标准方法208。 - 极性：带有阴极带。

4. 参数特性： - 最大额定值： - 正向电压（@IF=100mA）：1.0V - 功率耗散（注1）：500mW - 热阻（结到环境空气）（注2）：0.3K/mW - 工作和存储温度范围：-65至+175摄氏度 - 电气特性（TA=25°C，除非另有说明）： - 包括名义Zener电压、最大Zener电压、最大反向电流、最大调节器电流等参数。

5. 功能详解： - 该器件主要用于电压稳定和过压保护，具有快速开关速度和一般用途的整流功能。

6. 应用信息： - 适用于需要快速开关和电压稳定的应用场合。

7. 封装信息： - 封装类型：DO-35 - 重量：约0.13克 - 尺寸：以英寸和毫米为单位提供。

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