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ES1C

ES1C

  • 厂商:

    TSC

  • 封装:

  • 描述:

    ES1C - 1.0 AMP. Super Fast Surface Mount Rectifiers - Taiwan Semiconductor Company, Ltd

  • 数据手册
  • 价格&库存
ES1C 数据手册
ES1A THRU ES1J 1.0 AMP. Super Fast Surface Mount Rectifiers Voltage Range 50 to 600 Volts Current 1.0 Ampere Features Glass passivated junction chip For surface mounted application Low profile package Built-in strain relief, Ideal for automated placement Easy pick and place Superfast recovery time for high efficiency Glass passivated chip junction High temperature soldering: 260OC/10 seconds at terminals Plastic material used carries Underwriters Laboratory Classification 94V-O .062(1.58) .050(1.27) SMA/DO-214AC .111(2.83) .090(2.29) .187(4.75) .160(4.06) .103(2.61) .078(1.99) Mechanical Data Cases: Molded plastic Terminals: Solder plated Polarity: Indicated by cathode band Packing: 12mm tape per E1A STD RS-481 Weight: 0.064 gram .056(1.41) .035(0.90) .008(.20) .004(.10) .210(5.33) .195(4.95) .012(.31) .006(.15) Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25℃ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol ES ES ES ES ES ES ES ES Units Type Number 1A 1B 1C 1D 1F 1G 1H 1J Maximum Recurrent Peak Reverse Voltage V VRRM 50 100 150 200 300 400 500 600 Maximum RMS Voltage V VRMS 35 70 105 140 210 280 350 420 Maximum DC Blocking Voltage 50 100 150 200 300 400 500 600 V VDC Maximum Average Forward Rectified Current See Fig. 1 Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @ 1.0A Maximum DC Reverse Current @ TA =25℃ at Rated DC Blocking Voltage @ TA=100℃ Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Maximum Thermal Resistance (Note 3) Operating Temperature Range Storage Temperature Range I(AV) IFSM VF IR 0.95 1.0 30 1.3 5.0 100 35 10 85 35 -55 to +150 -55 to + 150 8 1.7 A A V uA uA nS pF ℃/W ℃ ℃ Trr Cj RθJA RθJL TJ TSTG Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and Applied VR=4.0 Volts 3. P.C.B. Mounted on 0.2 x 0.2”(5 x 5mm) Copper Pad Area. - 166 - RATINGS AND CHARACTERISTIC CURVES (ES1A THRU ES1J) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE PEAK FORWARD SURGE CURRENT. (A) 1.2 30 8.3ms Single Half Sine Wave o (JEDEC Method) at TL=120 C FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT AVERAGE FORWARD CURRENT. (A) 1.0 RESISTIVE OR INDUCTIVE LOAD 0.2X0.2"(5.0X5.0mm) COPPER PAD AREAS 25 0.8 20 0.6 15 0.4 10 0.2 0 80 90 100 110 120 o 5.0 130 140 150 1 10 NUMBER OF CYCLES AT 60Hz 100 LEAD TEMPERATURE. ( C) FIG.3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 50 Tj=25 C PULSE WIDTH-300 S 1% DUTY CYCLE 0 FIG.4- TYPICAL REVERSE CHARACTERISTICS 1000 INSTANTANEOUS FORWARD CURRENT. (A) INSTANTANEOUS REVERSE CURRENT. ( A) 10 100 Tj=125 0C 1A -D ES 1F -1 G 10 Tj=85 0C 1 ES -1 J 0.1 ES 1H 1 Tj=25 0C 0.1 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE. (V) 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) FIG.5- TYPICAL JUNCTION CAPACITANCE 14 12 10 8.0 6.0 4.0 2.0 0 0 1 Tj=25 0C f=1.0MHz Vsig=50mVp-p JUNCTION CAPACITANCE.(pF) ES1 A- D ES 1F -J 10 100 REVERSE VOLTAGE. (V) - 167 -

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