ES1D

ES1A - ES1J 1.0AMP. Surface Mount Super Fast Rectifiers SMA/DO-214AC Pb RoHS COMPLIANCE Features Glass passivated junction chip For surface mounted application Low profile package Built-in strain rellef Ideal for automated placement Easy pick and place Super fast recovery time for high efficiency Glass passivated chip junction High temperature soldering: 260 ℃/10 seconds at terminals Plastic material used carries Underwriters Laboratory Classification 94V-0 Qualified as per AEC-Q101 Green compound with suffix "G" on packing code & prefix "G" on datecode Mechanical Data Cases: Molded plastic Terminals: Pure tin plated, lead free Polarity: Indicated by cathode band Packing: 12mm tape per EIA STD RS-481 Weight: 0.064 grams Dimensions in inches and (millimeters) Marking Diagram ES1X = Specific Device Code G Y M = Green Compound = Year = Work Month Maximum Ratings and Electrical Characteristics Rating at 25 ℃ ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current, 8.3 ms Single Half Sinewave Superimposed on Rated Load (JEDEC method) Maximum Instantaneous Forward Voltage (Note 1) @1A Maximum DC Reverse Current at Rated @ T A=25 ℃ DC Blocking Voltage @ T A=125 ℃ Maximum Reverse Recovery Time (Note 2) Typical Junction Capacitance (Note 3) Maximum Thermal Resistance Operating Temperature Range Storage Temperature Range Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle Symbol VRRM VRMS VDC IF(AV) IFSM VF IR Trr Cj RθJA RθJL TJ TSTG ES 1A 50 35 50 ES 1B 100 70 100 ES 1C 150 105 150 ES 1D 200 140 200 1 30 ES 1F 300 210 300 ES 1G 400 280 400 ES 1H 500 350 500 ES 1J 600 420 600 Units V V V A A 0.95 5 100 35 16 85 35 1.3 1.7 V uA uA nS 18 O pF C/W O O - 55 to + 150 - 55 to + 150 C C Note 2: Reverse Recovery Test Conditions: I F=0.5A, I R=1.0A, I RR=0.25A Note 3: Measured at 1 MHz and Applied V R=4.0 Volts Version:G11 RATINGS AND CHARACTERISTIC CURVES (ES1A THRU ES1J) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 1.2 AVERAGE FORWARD A CURRENT (A) 1 0.8 0.6 0.4 0.2 0 80 90 100 110 120 130 140 150 o LEAD TEMPERATURE ( C) FIG. 2- TYPICAL INSTANTANEOUS FORWARD CHARACTERISRICS 100 TA=25℃ Pulse Width=300us 1% Duty Cycle INSTANTANEOUS FORWARD A CURRENT (A) 10 ES1A-D ES1F-1G RESISTER OR INDUCTIVE LOAD 1 0.1 ES1H-1J 30 FIG. 3- MAXIMUM NON-REPETITIVE FORWARD PEAK SURGE CURRENT 8.3mS Single Half Sine Wave (JEDEC Method) 0.01 0.4 0.6 0.8 1 1.2 1.4 FORWARD VOLTAGE (V) 1.6 1.8 PEAK FORWARD SURGE A CURRENT (A) 25 20 15 10 5 0 1 FIG. 5- TYPICAL REVERSE CHARACTERISTICS 1000 100 INSTANTANEOUS REVERSE A CURRENT (uA) 10 NUMBER OF CYCLES AT 60 Hz 100 TA=125℃ 10 TA=75℃ FIG. 4- TYPICAL JUNCTION CAPACITANCE 100 JUNCTION CAPACITANCE (pF) 1 TA=25℃ 0.1 ES1F-J 10 ES1A-D 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 1 0.1 1 10 100 REVERSE VOLTAGE (V) Version:G11