ES1DL

ES1AL - ES1JL 1.0 AMP. Surface Mount Super Fast Rectifiers Sub SMA Features For surface mounted application Low profile package Low power loss, high efficiency, Ideal for automated placement Glass passivated chip junction High temperature soldering: 260OC/10 seconds at terminals Mechanical Data Cases: Sub SMA plastic case Terminal : Pure tin plated, lead free. Polarity: Color band cathode end Packing: 12mm tape per EIA STD RS-481 W eight: approx. 15mg Marking: As below table Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 OC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol ES ES ES ES ES ES Type Number 1AL 1BL 1CL 1DL 1FL 1GL Maximum Recurrent Peak Reverse Voltage 50 100 150 200 300 400 VRRM Maximum RMS Voltage Maximum DC Blocking Voltage Marking Code Maximum Average Forward Rectified Current See Fig. 1 Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @ 1.0A o Maximum DC Reverse Current @ TA =25 C o at Rated DC Blocking Voltage @ TA=100 C Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Maximum Thermal Resistance (Note 3) Operating Temperature Range Storage Temperature Range Notes: ES 1HL 500 350 500 EHLYM VRMS VDC I(AV) IFSM VF IR 35 50 70 105 140 210 280 400 ES Units 1JL V 600 V 420 600 EJLYM 100 150 200 300 1.0 30 0.95 5.0 100 35 10 85 35 -55 to +150 -55 to +150 1.3 V A A EALYM EBLYM ECLYM EDLYM EFLYM EGLYM 1.7 V uA uA nS pF o C /W o o Trr Cj RθJA RθJL TJ TSTG 8 C C 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and Applied VR=4.0 Volts 3. P.C.B. Mounted on 0.2 x 0.2” (5.0 x 5.0mm) Copper Pad Area. Version: A06 RATINGS AND CHARACTERISTIC CURVES (ES1AL THRU ES1JL) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 1.2 50 Tj=25 C PULSE WIDTH-300 S 1% DUTY CYCLE 0 FIG.2- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS AVERAGE FORWARD CURRENT. (A) 1.0 INSTANTANEOUS FORWARD CURRENT. (A) 10 0.8 ES 1A L 0.6 RESISTIVE OR INDUCTIVE LOAD 0.2X0.2"(5.0X5.0mm) COPPER PAD AREAS -E S1 DL 0.4 1 ES 1F L -E S1 G L 0 80 90 100 110 120 o 130 140 150 0.1 LEAD TEMPERATURE. ( C) FIG.3- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT. (A) 30 0.01 8.3ms Single Half Sine Wave o (JEDEC Method) at TL=120 C 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE. (V) 25 20 15 10 FIG.5- TYPICAL REVERSE CHARACTERISTICS 1000 5.0 INSTANTANEOUS REVERSE CURRENT. ( A) 1 10 NUMBER OF CYCLES AT 60Hz 100 100 Tj=125 0C FIG.4- TYPICAL JUNCTION CAPACITANCE 14 12 10 8.0 6.0 4.0 2.0 0 0 1 Tj=25 0C f=1.0MHz Vsig=50mVp-p 10 Tj=85 0C JUNCTION CAPACITANCE.(pF) ES1 AL - ES 1DL ES 1FL 1 Tj=25 0C 0.1 -E S1J L 10 100 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) REVERSE VOLTAGE. (V) FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A (-) DUT (+) 50Vdc (approx) (-) PULSE GENERATOR (NOTE 2) 1W NON INDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A trr NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm ES Version: A06 1H 0.2 L -E S1 JL