ES2D

ES2A - ES2J 2.0 AMPS. Surface Mount Super Fast Rectifiers SMB/DO-214AA .083(2.10) .077(1.95) .147(3.73) .137(3.48) Features G lass passivated junction chip F or surface mounted application L ow profile package B uilt-in strain relief Ideal for automated placement E asy pick and place S uperfast recovery time for high efficiency G lass passivated chip junction H igh temperature soldering: O 260 C/10 seconds at terminals P lastic material used carries Underwriters Laboratory Classification 94V-0 .187(4.75) .167(4.25) .012(.31) .006(.15) .103(2.61) .078(1.99) .012(.31) .006(.15) .056(1.41) .035(0.90) .209(5.30) .201(5.10) .008(.20) .004(.10) M echanical Data C ases: Molded plastic T erminals: Pure tin plated, lead free. P olarity: Indicated by cathode band P acking: 12mm tape per EIA STD RS-481 W eight: 0.093 gram Dimensions in inches and (millimeters) M aximum Ratings and Electrical Characteristics R ating at 25 O C a mbient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% S ymbol ES ES ES T ype Number 2A 2B 2C Maximum Recurrent Peak Reverse 5 0 100 150 V RRM Voltage M aximum RMS Voltage ES 2D 200 140 200 ES 2F 300 210 300 ES 2G 400 280 400 ES 2H 500 350 500 ES 2J 600 420 600 U nits V V V A A V RMS V DC I(AV) IFSM VF IR T rr Cj R θJA R θJL TJ 35 50 70 100 105 150 M aximum DC Blocking Voltage M aximum Average Forward Rectified Current See Fig. 1 P eak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) M aximum Instantaneous Forward Voltage @ 2.0A M aximum DC Reverse Current o @T A = 25 C at Rated DC Blocking Voltage o @ T A =100 C M aximum Reverse Recovery Time ( Note 1 ) T ypical Junction Capacitance ( Note 2 ) M aximum Thermal Resistance (Note 3) Operating Temperature Range S torage Temperature Range N otes: 2 .0 50 0 .95 10 350 35 25 75 20 - 55 to +150 - 55 to +150 20 o 1.3 1.7 V uA uA nS pF C /W o o T STG 1. Reverse Recovery Test Conditions: IF =0.5A, IR =1.0A, IRR =0.25A 2. Measured at 1 MHz and Applied V R =4.0 Volts 3. Units Mounted on P.C.B. 0.4” x 0.4” (10mm x 10mm) Pad Areas C C Version: A06 RATINGS AND CHARACTERISTIC CURVES (ES2A THRU ES2J) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 3.0 FIG.2- TYPICAL REVERSE CHARACTERISTICS 1000 AVERAGE FORWARD CURRENT. (A) INSTANTANEOUS REVERSE CURRENT. ( A) RESISTIVE OR INDUCTIVE LOAD 0.4X0.4"(10X10mm) COPPER PAD AREAS 2.0 100 Tj=125 0C 10 Tj=85 0C 1.0 1 Tj=25 0C 0 80 90 100 110 120 o 130 140 150 LEAD TEMPERATURE. ( C) FIG.3- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 60 0.1 PEAK FORWARD SURGE CURRENT. (A) 50 8.3ms Single Half Sine Wave o (JEDEC Method) at TL=120 C 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) 40 30 20 10 0 NUMBER OF CYCLES AT 60Hz 60 FIG.5- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS Tj=25 C PULSE WIDTH-300 S 1% DUTY CYCLE 0 INSTANTANEOUS FORWARD CURRENT. (A) 1 10 100 10 ES JUNCTION CAPACITANCE.(pF) 40 30 20 ES 2A -D 0.1 ES 2F -J 10 0 0 1 10 100 REVERSE VOLTAGE. (V) 0.01 0.4 0.6 0.8 1.0 1.2 ES 1.4 50 Tj=25 0C f=1.0MHz Vsig=50mVp-p ES 60 2F 2H 1 -G -J FIG.4- TYPICAL JUNCTION CAPACITANCE 2A -D 1.6 1.8 FORWARD VOLTAGE. (V) FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A (-) DUT (+) 50Vdc (approx) (-) PULSE GENERATOR (NOTE 2) 1W NON INDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A trr NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm Version: A06