ES3G

ES3A - ES3J 3.0 AMPS. Surface Mount Super Fast Rectifiers SMC/DO-214AB .126(3.20) .114(2.90) .245(6.22) .220(5.59) Features G lass passivated junction chip For surface mounted applications Low profile package Built-in strain relief Ideal for automated placement Easy pick and place Super fast recovery time for high efficiency G lass passivated chip junction H igh temperature soldering: 260oC/10 seconds at terminals Plastic material used carries Underwriters Laboratory Classification 94V-0 .280(7.11) .260(6.60) .012(.31) .006(.15) .103(2.62) .079(2.00) .061(1.56) .050(1.26) .008(.20) .004(.10) .063(1.6) .039(1.0) M echanical Data C ases: Molded plastic Terminals: Pure tin plated, lead free. Polarity: Indicated by cathode band Packaging: 16mm tape per EIA STD RS-481 W eight: 0.21 gram .320(8.13) .305(7.75) Dimensions in inches and (millimeters) M aximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol ES ES ES ES Type Number 3A Maximum Recurrent Peak Reverse Voltage M aximum RMS Voltage Maximum DC Blocking Voltage M aximum Average Forward Rectified Current See Fig. 1 Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) @TL = 100 oC Maximum Instantaneous Forward Voltage @ 3.0A Maximum DC Reverse Current @ TA =25 oC at Rated DC Blocking Voltage @ TA=100 oC Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Typical Thermal Resistance (Note 3) Operating Temperature Range Storage Temperature Range Notes: 3B 3C 3D ES 3F ES 3G ES 3H ES 3J Units V V V A A VRRM VRMS VDC I(AV) IFSM VF IR Trr Cj RθJA RθJL TJ 50 35 50 100 150 200 300 400 500 600 70 105 140 210 280 350 420 100 150 200 300 400 500 600 3.0 100 0.95 10 500 35 45 47 12 -55 to +150 -55 to +150 30 o 1.3 1.7 V uA uA nS pF C /W o o TSTG 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and Applied VR=4.0 Volts 3. Units Mounted on P.C.B. with 0.6” x 0.6”(16mm x 16mm) Copper Pad Areas C C - 184 - Version: B07 RATINGS AND CHARACTERISTIC CURVES (ES3A THRU ES3J) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 3 RESISTIVE OR INDUCTIVE LOAD 2 150 PEAK FORWARD SURGE CURRENT. (A) 125 100 75 50 25 0 80 90 100 110 120 130 o LEAD TEMPERATURE. ( C) 140 150 1 10 NUMBER OF CYCLES AT 60Hz 100 8.3ms Single Half Sine Wave o (JEDEC Method) at TL=120 C AVERAGE FORWARD CURRENT. (A) FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 1 P.C.B. MOUNTED ON 0.6X0.6"(16X16mm) COPPER PADS 0 100 FIG.3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG.4- TYPICAL REVERSE CHARACTERISTICS 1000 INSTANTANEOUS REVERSE CURRENT. ( A) INSTANTANEOUS FORWARD CURRENT. (A) 10 Tj=25 C PULSE WIDTH-300 S 1% DUTY CYCLE 0 100 Tj=100 0C ES 3A -D -G E S 3F 10 Tj=75 0C 1 E S 3H -J 1 Tj=25 0C 0.1 0.1 0.01 0.4 0.6 0.8 1.0 1.2 1.4 FORWARD VOLT AGE. (V) 1.6 1.8 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLT AGE. (%) 100 TRANSIENT THERMAL IMPEDANCE ( OC/W) 105 JUNCTION CAPACITANCE.(pF) 90 75 60 45 30 FIG.5- TYPICAL JUNCTION CAPACIT ANCE Tj=25 0C f=1.0MHz Vsig=50mVp-p FIG.6- TYPICAL TRANSIENT THERMAL IMPEDANCE 10 ES3 ES3 F-J 1 A- D 15 0 1 10 REVERSE VOLTAGE. (V) 100 0.1 0.01 0.1 1 T, HEATING TIME (sec.) 10 100 FIG.7- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A (-) DUT (+) 50Vdc (approx) (-) PULSE GENERATOR (NOTE 2) 1W NON INDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A trr NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm Version: B07