ESH1B

CREAT BY ART ESH1B - ESH1D 1.0AMP Surface Mount Super Fast Rectifiers SMA/DO-214AC Pb RoHS COMPLIANCE Features Glass passivated junction chip For surface mounted application Low profile package Built-in strain rellef Ideal for automated placement Easy pick and place Super fast recovery time for high efficiency Qualified as per AEC-Q101 High temperature soldering: 260 ℃/10 seconds at terminals Plastic material used carries Underwriters Laboratory Classification 94V-0 Green compound with suffix "G" on packing code & prefix "G" on datecode Mechanical Data Case: Molded plastic Terminals: Pure tin plated, lead free Polarity: Indicated by cathode band Packing: 12mm tape per EIA STD RS-481 Weight: 0.064 grams Dimensions in inches and (millimeters) Marking Diagram ESH1X = Specific Device Code G Y M = Green Compound = Year = Work Month Maximum Ratings and Electrical Characteristics Rating at 25 ℃ ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current, 8.3 ms Single Half Sinewave Superimposed on Rated Load Maximum Instantaneous Forward Voltage (Note 1) @ 1.0A Maximum Reverse Current @ Rated VR T A=25 ℃ T A=125 ℃ Symbol VRRM VRMS VDC IF(AV) IFSM VF IR Trr Cj RθjA RθjL TJ TSTG ESH1B 100 70 100 ESH1C 150 105 150 1.0 30 0.95 1 25 15 16 85 35 - 55 to + 175 - 55 to + 175 ESH1D 200 140 200 Unit V V V A A V uA nS pF O Maximum Reverse Recovery Time (Note 2) Typical Junction Capacitance (Note 3) Typical Thermal Resistance Operating Temperature Range Storage Temperature Range Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle C/W O O C C Note 2: Reverse Recovery Test Conditions: I F=0.5A, I R=1.0A, I RR=0.25A Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Version:A11 RATINGS AND CHARACTERISTIC CURVES (ESH1B THRU ESH1D) FIG.1 FORWARD CURRENT DERATING CURVE 1.2 100 FIG. 3 TYPICAL FORWARD CHARACTERISRICS AVERAGE FORWARD CURRENT (A) 1 0.8 0.6 0.4 0.2 0 75 85 95 105 115 125 135 145 155 165 175 INSTANTANEOUS FORWARD CURRENT (A) 10 RESISTER OR INDUCTIVE LOAD 1 LEAD TEMPERATURE (oC) 0.1 TA=25℃ Pulse Width=300us 1% Duty Cycle FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 30 25 20 15 10 5 0 1 10 NUMBER OF CYCLES AT 60 Hz 100 8.3mS Single Half Sine Wave JEDEC Method 0.01 0.4 0.6 0.8 1 1.2 1.4 FORWARD VOLTAGE (V) 1.6 1.8 PEAK FORWARD SURGE A CURRENT (A) FIG. 4 TYPICAL REVERSE CHARACTERISTICS 1000 INSTANTANEOUS REVERSE CURRENT (uA) TA=125℃ 100 FIG. 5 TYPICAL JUNCTION CAPACITANCE 100 TA=75℃ 10 CAPACITANCE (pF) 10 1 TA=25℃ 1 0.1 1 10 100 REVERSE VOLTAGE (V) 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Version:A11