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ESH3B

ESH3B

  • 厂商:

    TSC

  • 封装:

  • 描述:

    ESH3B - 3.0AMPS Surface Mount Super Fast Rectifiers - Taiwan Semiconductor Company, Ltd

  • 数据手册
  • 价格&库存
ESH3B 数据手册
CREAT BY ART ESH3B - ESH3D 3.0AMPS Surface Mount Super Fast Rectifiers SMC/DO-214AB Pb RoHS COMPLIANCE Features Glass passivated junction chip For surface mounted application Low profile package Built-in strain rellef, Ideal for automated place ment Ideal for automated placement Easy pick and place Super fast recovery time for high efficiency Qualifited as per AEC-Q101 High temperature soldering: 260 ℃/10 seconds at terminals Plastic material used carries Underwriters Laboratory Classification 94V-0 Green compound with suffix "G" on packing code & prefix "G" on datecode Mechanical Data Case: Molded plastic Epoxy: UL 94V-0 rate flame retardant Terminals: Pure tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed Polarity: Color band denotes cathode Packing: 16mm tape per EIA STD RS-481 Weight: 0.21 grams Dimensions in inches and (millimeters) Marking Diagram ESH3X = Specific Device Code G Y M = Green Compound = Year = Work Month Maximum Ratings and Electrical Characteristics Rating at 25 ℃ ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current, 8.3 ms Single Half Sinewave Superimposed on Rated Load Maximum Instantaneous Forward Voltage (Note 1) @3A Maximum Reverse Current @ Rated VR T A=25 ℃ T A=125 ℃ Symbol VRRM VRMS VDC IF(AV) IFSM VF IR Trr Cj RθjA RθjL TJ TSTG ESH3B 100 70 100 ESH3C 150 105 150 3 125 0.90 5 150 25 45 47 12 - 55 to + 175 - 55 to + 175 ESH3D 200 140 200 Unit V V V A A V uA nS pF O Maximum Reverse Recovery Time (Note 2) Typical Junction Capacitance (Note 3) Typical Thermal Resistance Operating Temperature Range Storage Temperature Range Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle C/W O O C C Note 2: Reverse Recovery Test Conditions: I F=0.5A, I R=1.0A, I RR=0.25A Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Version:B11 RATINGS AND CHARACTERISTIC CURVES (ESH3B THRU ESH3D) FIG.1 FORWARD CURRENT DERATING CURVE 3.5 125 FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 8.3mS Single Half Sine Wave JEDEC Method PEAK FORWARD SURGE A CURRENT (A) 100 AVERAGE FORWARD CURRENT (A) 3 2.5 2 1.5 1 0.5 0 0 25 50 75 100 125 o 75 50 RESISTER OR INDUCTIVE LOAD 25 0 150 175 1 LEAD TEMPERATURE ( C) 10 NUMBER OF CYCLES AT 60 Hz 100 FIG. 3 TYPICAL FORWARD CHARACTERISRICS 10 FIG. 4 TYPICAL REVERSE CHARACTERISTICS 1000 INSTANTANEOUS REVERSE CURRENT (uA) TA=125℃ INSTANTANEOUS FORWARD CURRENT (A) 100 TA=75℃ 10 1 0.1 TA=25℃ Pulse Width=300us 1% Duty Cycle 0.4 0.6 0.8 FORWARD VOLTAGE (V) 1 1.2 1 TA=25℃ 0.1 0 20 40 60 80 100 120 140 0.01 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG. 5 TYPICAL JUNCTION CAPACITANCE 100 FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE 100 TRANSIENT THERMAL IMPEDANCE A (℃/W) CAPACITANCE (pF) 75 10 50 1 25 0 0.1 1 10 100 REVERSE VOLTAGE (V) 0.1 0.01 0.1 1 T-PULSE DURATION(s) 10 100 Version:B11
ESH3B 价格&库存

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