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FR1002G

FR1002G

  • 厂商:

    TSC

  • 封装:

  • 描述:

    FR1002G - Isolated10 Amps Glass Passivated Fast Recovery Rectifiers - Taiwan Semiconductor Company, ...

  • 数据手册
  • 价格&库存
FR1002G 数据手册
FR1001G - FR1007G Isolated10 Amps Glass Passivated Fast Recovery Rectifiers TO-220AB Features G lass passivated chip junction. H igh efficiency, Low VF H igh current capability H igh reliability H igh surge current capability L ow power loss M echanical Data C ases: TO-220AB molded plastic E poxy: UL 94V-0 rate flame retardant T erminals: P ure tin plated, Lead free. L eads solderable per MIL-STD-202, Method 208 guaranteed P olarity: As marked H igh temperature soldering guaranteed: 260 oC/10 seconds .16”,(4.06mm) from case. M ounting position: Any W eight: 2.24 grams Dimensions in inches and (millimeters) M aximum Ratings and Electrical Characteristics R ating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% T ype Number M aximum Recurrent Peak Reverse Voltage M aximum RMS Voltage M aximum DC Blocking Voltage M aximum Average Forward Rectified Current See Fig. 1 P eak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) M aximum Instantaneous Forward Voltage @ 5.0A M aximum DC Reverse Current @ T C =25 C at Rated DC Blocking Voltage @ T C =125 oC M aximum Reverse Recovery Time ( Note 1) T ypical Junction Capacitance (Note 3) T ypical Thermal Resistance R θJC (Note 2) o S ymbol V RRM V RMS V DC I(AV) IFSM VF IR FR FR FR FR FR FR FR 1001G 1002G 1003G 1004G 1005G 1006G 1007G U nits V V V A A V uA uA nS pF o C/W o C 50 35 50 100 70 100 200 140 200 400 280 400 10 125 1 .3 5 .0 100 600 420 600 800 560 800 1000 700 1000 T rr Cj R θJC 1 50 O perating and Storage Temperature Range T J ,T STG 1. Reverse Recovery Test Conditions: IF=0.5A, IR =1.0A, IRR =0.25A N otes: 2. Thermal Resistance from Junction to Case Per Leg Mounted on Heatsink Size 2” x 3” x 0.25” Al-Plate. 3. Measured at 1MHz and Applied Reverse Voltage of 4.0 Volts D.C. 250 40 3 .0 -65 to +150 500 Version: A06 RATINGS AND CHARACTERISTIC CURVES (FR1001G THRU FR1007G) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 1000 FIG.2- TYPICAL REVERSE CHARACTERISTICS PER LEG 12 AVERAGE FORWARD CURRENT. (A) 10 8 INSTANTANEOUS REVERSE CURRENT. ( A) 100 6 4 10 Tj=125 0C 2 0 50 100 o 150 CASE TEMPERATURE. ( C) FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 150 1 PEAK FORWARD SURGE CURRENT. (A) Tj=25 0C 125 TJ=125 0C 8.3ms Single Half Sine Wave JEDEC Method 0.1 0 20 40 60 80 100 120 140 100 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) 75 50 80 25 40 0 NUMBER OF CYCLES AT 60Hz FIG.5- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS PER LEG INSTANTANEOUS FORWARD CURRENT. (A) 1 2 5 10 20 50 100 20 10 FIG.4- TYPICAL JUNCTION CAPACITANCE 150 Tj=25 0C f=1.0MHz Vsig=50mVp-p 4 2 1 CAPACITANCE.(pF) 100 50 0.4 0.2 0.1 0.8 Tj=25oC Pulse Width=300 s 1% Duty Cycle 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 0.1 0.5 1 5 10 50 100 500 1000 REVERSE VOLTAGE. (V) INSTANTANEOUS FORWARD VOLTAGE. (V) FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A (-) DUT (+) 50Vdc (approx) (-) PULSE GENERATOR (NOTE 2) 1W NON INDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A trr NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm Version: A06
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