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FRA1001G_1

FRA1001G_1

  • 厂商:

    TSC

  • 封装:

  • 描述:

    FRA1001G_1 - 10 AMPS. Glass Passivated Fast Recovery Rectifiers - Taiwan Semiconductor Company, Ltd

  • 数据手册
  • 价格&库存
FRA1001G_1 数据手册
FRA1001G - FRA1007G 10 AMPS. Glass Passivated Fast Recovery Rectifiers TO-220AC .185(4.70) .175(4.44) .412(10.5) MAX .113(2.87) .103(2.62) DIA .154(3.91) .148(3.74) .27(6.86) .23(5.84) .594(15.1) .587(14.9) PIN1 .16(4.06) .14(3.56) .56(14.22) .53(13.46) .037(0.94) .027(0.68) 2 .11(2.79) .10(2.54) .055(1.40) .045(1.14) Features Glass passivated chip junction. High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Mechanical Data Cases: ITO-220AC molded plastic Epoxy: UL 94V-0 rate flame retardant Terminals: Pure tin plated, Lead free. Leads solderable per MIL-STD-202, Method 208 guaranteed Polarity: As marked High temperature soldering guaranteed: 260 oC /10 seconds .16”,(4.06mm) from case. Mounting position: Any Weight: 2.24 grams .205(5.20) .195(4.95) .025(0.64) .014(0.35) PIN 1 PIN 2 CASE Dimensions in inches and (millimeters) Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Maximum Ratings and Electrical Characteristics Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current @TC = 55 oC Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @ 10A Maximum DC Reverse Current @ TC=25 oC at Rated DC Blocking Voltage @ TC=125 oC Maximum Reverse Recovery Time ( Note 2 ) Typical Junction Capacitance ( Note 1 ) TJ=25 C Typical Thermal Resistance ( Note 3 ) Operating and Storage Temperature Range o Symbol FRA VRRM VRMS VDC I(AV) IFSM VF IR Trr 50 35 50 FRA FRA FRA FRA FRA FRA 1001G 1002G 1003G 1004G 1005G 1006G 1007G Units V V V A A V uA uA nS pF o C/W o C 100 70 100 200 140 200 400 280 400 10 150 1.3 5.0 100 600 420 600 800 560 800 1000 700 1000 150 250 60 3.0 -65 to +150 500 Cj RθJC Notes: TJ ,TSTG 1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C. 2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 3. Thermal Resistance from Junction to Case, with Heatsink size 2” x 3” x 0.25” Al-Plate. Version: A06 RATINGS AND CHARACTERISTIC CURVES (FRA1001G THRU FRA1007G) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE FIG.2- TYPICAL REVERSE CHARACTERISTICS 100 10 AVERAGE FORWARD CURRENT. (A) 8 40 6 Tj=125 0C INSTANTANEOUS REVERSE CURRENT. ( A) 4 10 Tj=75 0C 2 4 2 1 0 0 50 100 o 150 CASE TEMPERATURE. ( C) FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 150 0.4 0.2 Tj=25 0C PEAK FORWARD SURGE CURRENT. (A) 125 TJ=125 0C 8.3ms Single Half Sine Wave JEDEC Method 0.1 0 20 40 60 80 100 120 140 100 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) 75 50 400 25 200 0 NUMBER OF CYCLES AT 60Hz 100 FIG.5- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT. (A) 1 2 5 10 20 50 100 FIG.4- TYPICAL JUNCTION CAPACITANCE 300 Tj=25 0C f=1.0MHz Vsig=50mVp-p 40 20 10 250 CAPACITANCE.(pF) 200 4 2 1 150 100 0.4 50 0.2 0.1 0.6 Tj=25oC Pulse Width=300 s 1% Duty Cycle 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.1 0.5 1 5 10 50 100 500 1000 REVERSE VOLTAGE. (V) INSTANTANEOUS FORWARD VOLTAGE. (V) FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A (-) DUT (+) 50Vdc (approx) (-) PULSE GENERATOR (NOTE 2) 1W NON INDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A trr NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm Version: A06
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