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FRA1003G

FRA1003G

  • 厂商:

    TSC

  • 封装:

  • 描述:

    FRA1003G - 10 AMPS. Glass Passivated Fast Recovery Rectifiers - Taiwan Semiconductor Company, Ltd

  • 数据手册
  • 价格&库存
FRA1003G 数据手册
FRA1001G THRU FRA1007G 10 AMPS. Glass Passivated Fast Recovery Rectifiers Voltage Range 50 to 1000 Volts Current 10 Amperes Features Low forward voltage drop High current capability High reliability High surge current capability TO-220A .185(4.70) .175(4.44) .412(10.5) MAX DIA .154(3.91) .148(3.74) .27(6.86) .23(5.84) .594(15.1) .587(14.9) PIN1 .16(4.06) .14(3.56) .56(14.22) .53(13.46) .037(0.94) .027(0.68) 2 .11(2.79) .10(2.54) .055(1.40) .045(1.14) .113(2.87) .103(2.62) Mechanical Data Cases: ITO-220AC molded plastic Epoxy: UL 94V-0 rate flame retardant Terminals: Leads solderable per MIL-STD-202, Method 208 guaranteed Polarity: As marked High temperature soldering guaranteed: 260℃/10 seconds .16”,(4.06mm) from case. Mounting position: Any Weight: 2.24 grams .205(5.20) .195(4.95) .025(0.64) .014(0.35) PIN 1 PIN 2 CASE Case Positive Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25℃ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol FRA FRA FRA Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current @TC = 55℃ Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @ 10A Maximum DC Reverse Current @ TC=25℃ at Rated DC Blocking Voltage @ TC=125℃ Maximum Reverse Recovery Time ( Note 2 ) Typical Junction Capacitance ( Note 1 ) TJ=25℃ Typical Thermal Resistance (Note 3) Operating and Storage Temperature Range FRA FRA FRA FRA 1001G 1002G 1003G 1004G 1005G 1006G 1007G Units V V V A A V uA uA nS pF ℃/W ℃ VRRM VRMS VDC I(AV) IFSM VF IR Trr 50 35 50 100 70 100 200 140 200 400 280 400 10 150 1.3 5.0 100 600 420 600 800 560 800 1000 700 1000 150 Cj RθJC TJ ,TSTG 250 100 3.0 -65 to +150 500 Notes: 1. Measured at 1 MHz and Applied Reverse Voltage of 4..0 Volts D.C. 2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 3. Thermal Resistance from Junction to Case, with Heatsink size 2” x 3” x 0.25” Al-Plate - 456 - RATINGS AND CHARACTERISTIC CURVES (FRA1001G THRU FRA1007G) FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A (-) DUT (+) 50Vdc (approx) (-) PULSE GENERATOR (NOTE 2) 1W NON INDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A trr NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm FIG.2- MAXIMUM FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT. (A) 10 8 6 4 2 0 400 200 FIG.5- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT. (A) 100 40 20 10 Tj=25oC Pulse Width=300 s 1% Duty Cycle 4 2 1 0 50 CASE TEMPERATURE. ( C) o 100 150 PEAK FORWARD SURGE CURRENT. (A) 150 125 FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 0.4 0.2 TJ=125 C 0 100 8.3ms Single Half Sine Wave JEDEC Method 0.1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 INSTANTANEOUS FORWARD VOLTAGE. (V) 75 FIG.6- TYPICAL REVERSE CHARACTERISTICS 50 100 25 0 40 INSTANTANEOUS REVERSE CURRENT. ( A) 1 2 5 10 20 50 100 NUMBER OF CYCLES AT 60Hz Tj=125 0C FIG.4- TYPICAL JUNCTION CAPACITANCE 300 10 4 2 1 Tj=75 0C CAPACITANCE.(pF) 250 200 150 100 50 0 0.1 Tj=25 0C f=1.0MHz Vsig=50mVp-p 0.5 1 5 10 50 100 500 1000 0.4 0.2 0.1 Tj=25 0C 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) REVERSE VOLTAGE. (V) - 457 -
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