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FRA802G

FRA802G

  • 厂商:

    TSC

  • 封装:

  • 描述:

    FRA802G - 8.0 AMPS. Glass Passivated Fast Recovery Rectifiers - Taiwan Semiconductor Company, Ltd

  • 数据手册
  • 价格&库存
FRA802G 数据手册
FRA801G - FRA807G 8.0 AMPS. Glass Passivated Fast Recovery Rectifiers TO-220AC .185(4.70) .175(4.44) .412(10.5) MAX DIA .154(3.91) .148(3.74) .27(6.86) .23(5.84) .594(15.1) .587(14.9) PIN1 .16(4.06) .14(3.56) .56(14.22) .53(13.46) .037(0.94) .027(0.68) 2 .11(2.79) .10(2.54) .055(1.40) .045(1.14) Features Glass passivated chip junction. High efficiency, Low VF High current capability High reliability High surge current capability Low power loss .113(2.87) .103(2.62) Mechanical Data Cases: TO-220AC Molded plastic Epoxy: UL 94V-0 rate flame retardant Terminals: Pure tin plated, Lead free. Leads solderable per MIL-STD-202, Method 208 guaranteed Polarity: As marked High temperature soldering guaranteed: o 260 C /10 seconds .16”,(4.06mm) from case. Mounting position: Any W eight: 2.24 grams .205(5.20) .195(4.95) .025(0.64) .014(0.35) PIN 1 PIN 2 CASE Dimensions in inches and (millimeters) Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Maximum Ratings and Electrical Characteristics Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current @TC = 55 oC Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @ 8.0A Maximum DC Reverse Current @ TC=25 oC at Rated DC Blocking Voltage @ TC=125 oC Maximum Reverse Recovery Time ( Note 2 ) Typical Junction Capacitance ( Note 1 ) T J=25℃ Typical Thermal Resistance (Note 3) Operating and Storage Temperature Range Symbol FRA VRRM VRMS VDC I(AV) IFSM VF IR Trr Cj RθJA TJ ,TSTG 801G FRA 802G FRA 803G FRA 804G FRA 805G FRA 806G FRA 807G Units V V V A A V uA uA nS pF o C/W o C 50 35 50 100 70 100 200 140 200 400 280 400 8.0 150 1.3 5.0 100 600 420 600 800 560 800 1000 700 1000 150 250 50 3.0 -65 to +150 500 Notes: 1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C. 2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 3. Thermal Resistance from Junction to Case, with Heatsink size 2” x 3” x 0.25” Al-Plate. Version: A06 RATINGS AND CHARACTERISTIC CURVES (FRA801G THRU FRA807G) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE FIG.2- TYPICAL REVERSE CHARACTERISTICS 100 10 AVERAGE FORWARD CURRENT. (A) 8 40 INSTANTANEOUS REVERSE CURRENT. ( A) 6 Tj=125 0C 10 4 2 4 2 1 Tj=75 0C 0 0 50 100 o CASE TEMPERATURE. ( C) 150 FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 150 0.4 0.2 PEAK FORWARD SURGE CURRENT. (A) Tj=25 0C 125 TJ=125 0C 8.3ms Single Half Sine Wave JEDEC Method 0.1 0 20 40 60 80 100 120 140 100 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) 75 50 400 25 200 0 NUMBER OF CYCLES AT 60Hz 100 FIG.5- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT. (A) 1 2 5 10 20 50 100 FIG.4- TYPICAL JUNCTION CAPACITANCE 120 Tj=25 0C f=1.0MHz Vsig=50mVp-p 40 20 10 100 CAPACITANCE.(pF) 80 4 2 1 60 40 0.4 20 0.2 0.1 0.6 Tj=25oC Pulse Width=300 s 1% Duty Cycle 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.1 0.5 1 5 10 50 100 500 1000 REVERSE VOLTAGE. (V) INSTANTANEOUS FORWARD VOLTAGE. (V) FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A (-) DUT (+) 50Vdc (approx) (-) PULSE GENERATOR (NOTE 2) 1W NON INDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A trr NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm Version: A06
FRA802G 价格&库存

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