FRAF1006G

FRAF1001G - FRAF1007G Isolated 10 AMPS. Glass Passivated Fast Recovery Rectifiers ITO-220AC .185(4.7) .173(4.4) .124(3.16) .118(3.00) .406(10.3) .390(9.90) .134(3.4)DIA .113(3.0)DIA .272(6.9) .248(6.3) .112(2.85) .100(2.55) Features G lass passivated chip junction. H igh efficiency, Low VF H igh current capability H igh reliability H igh surge current capability L ow power loss .606(15.5) .583(14.8) .063(1.6) MAX .161(4.1) .146(3.7) .110(2.8) .098(2.5) .030(0.76) .020(0.50) .055(1.4) .043(1.1) .035(0.9) .020(0.5) .071(1.8) MAX .543(13.8) .512(13.2) M echanical Data C ases: ITO-220AC molded plastic E poxy: UL 94V-0 rate flame retardant T erminals: Pure tin plated, Lead free. Leads solderable per MIL-STD-202, Method 208 guaranteed P olarity: As marked H igh temperature soldering guaranteed: o 260 C /10 seconds 0.25”,(6.35mm) from case. M ounting position: Any W eight: 2.24 grams M ounting torque: 5 in – 1bs. max. 2 .100(2.55) .100(2.55) PIN 1 PIN 2 CASE Case Positive Dimensions in inches and (millimeters) M aximum Ratings and Electrical Characteristics R ating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% T ype Number M aximum Recurrent Peak Reverse Voltage M aximum RMS Voltage M aximum DC Blocking Voltage M aximum Average Forward Rectified Current @TC = 55 oC P eak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) M aximum Instantaneous Forward Voltage @ 10A M aximum DC Reverse Current @ TC=25 oC at Rated DC Blocking Voltage @ TC=125 oC M aximum Reverse Recovery Time ( Note 2 ) Typical Junction Capacitance ( Note 1 ) TJ=25 oC Typical Thermal Resistance (Note 3) O perating and Storage Temperature Range S ymbol FRAF FRAF FRAF FRAF FRAF FRAF FRAF U nits 1001G 1002G 1003G 1004G 1005G 1006G 1007G V RRM V RMS V DC I(AV) IFSM VF IR T rr 50 35 50 100 70 100 200 140 200 400 280 400 10 1 50 1 .3 5 .0 100 600 420 600 800 560 800 1000 700 1000 V V V A A V uA uA nS pF o C/W o C 150 Cj R θJC N otes: T J ,T STG 1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C. 2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 3. Thermal Resistance from Junction to Case, with Heatsink size 2” x 3” x 0.25” Al-Plate. 250 60 5 .0 -65 to +150 500 Version: A06 RATINGS AND CHARACTERISTIC CURVES (FRAF1001G THRU FRAF1007G) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE FIG.2- TYPICAL REVERSE CHARACTERISTICS 100 10 AVERAGE FORWARD CURRENT. (A) 8 40 6 Tj=125 0C INSTANTANEOUS REVERSE CURRENT. ( A) 4 10 Tj=75 0C 2 4 2 1 0 0 50 100 o 150 CASE TEMPERATURE. ( C) FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 150 0.4 0.2 Tj=25 0C PEAK FORWARD SURGE CURRENT. (A) 125 TJ=125 0C 8.3ms Single Half Sine Wave JEDEC Method 0.1 0 20 40 60 80 100 120 140 100 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) 75 50 400 25 200 0 NUMBER OF CYCLES AT 60Hz 100 FIG.5- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT. (A) 1 2 5 10 20 50 100 FIG.4- TYPICAL JUNCTION CAPACITANCE 300 Tj=25 C f=1.0MHz Vsig=50mVp-p 0 40 20 10 250 CAPACITANCE.(pF) 200 4 2 1 150 100 0.4 50 0.2 0.1 0.6 Tj=25oC Pulse Width=300 s 1% Duty Cycle 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.1 0.5 1 5 10 50 100 500 1000 REVERSE VOLTAGE. (V) INSTANTANEOUS FORWARD VOLTAGE. (V) FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A (-) DUT (+) 50Vdc (approx) (-) PULSE GENERATOR (NOTE 2) 1W NON INDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A trr NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm Version: A06