FRAF801G

FRAF801G - FRAF807G Isolated 8.0 AMPS. Glass Passivated Fast Recovery Rectifiers ITO-220AC .185(4.7) .173(4.4) .124(3.16) .118(3.00) .406(10.3) .390(9.90) .134(3.4)DIA .113(3.0)DIA .272(6.9) .248(6.3) .112(2.85) .100(2.55) Features G lass passivated chip junction. H igh efficiency, Low VF H igh current capability H igh reliability H igh surge current capability Low power loss .606(15.5) .583(14.8) .063(1.6) MAX .161(4.1) .146(3.7) .110(2.8) .098(2.5) .030(0.76) .020(0.50) .055(1.4) .043(1.1) .035(0.9) .020(0.5) .071(1.8) MAX .543(13.8) .512(13.2) M echanical Data C ases: ITO-220AC molded plastic E poxy: UL 94V-0 rate flame retardant Terminals: Pure tin plated, Lead free. Leads solderable per MIL-STD-202, Method 208 guaranteed P olarity: As marked H igh temperature soldering guaranteed: o 260 C /10 seconds 0.25”,(6.35mm) from case. M ounting position: Any W eight: 2.24 grams M ounting torque: 5 in – 1bs. max. 2 .100(2.55) .100(2.55) PIN 1 PIN 2 CASE Case Positive Dimensions in inches and (millimeters) R ating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% M aximum Ratings and Electrical Characteristics Type Number M aximum Recurrent Peak Reverse Voltage M aximum RMS Voltage M aximum DC Blocking Voltage M aximum Average Forward Rectified Current @TC = 55 oC Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) M aximum Instantaneous Forward Voltage @ 8.0A M aximum DC Reverse Current @ T C=25 oC at Rated DC Blocking Voltage @ TC=125 oC M aximum Reverse Recovery Time ( Note 2 ) Typical Junction Capacitance ( Note 1 ) T J=25 oC Typical Thermal Resistance (Note 3) O perating and Storage Temperature Range Symbol FRAF FRAF FRAF FRAF FRAF FRAF FRAF U nits 801G 802G 803G 804G 805G 806G 807G VRRM VRMS VDC I(AV) IFSM VF IR Trr 50 35 50 100 70 100 200 140 200 400 280 400 8.0 150 1.3 5.0 100 600 420 600 800 560 800 1000 700 1000 V V V A A V uA uA nS pF o C/W o C 150 Cj R θJC Notes: TJ ,TSTG 1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C. 2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 3. Thermal Resistance from Junction to Case, with Heatsink size 2” x 3” x 0.25” Al-Plate. 250 50 5.0 -65 to +150 500 Version: A06 RATINGS AND CHARACTERISTIC CURVES (FRAF801G THRU FRAF807G) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE FIG.2- TYPICAL REVERSE CHARACTERISTICS 100 10 AVERAGE FORWARD CURRENT. (A) 8 40 6 Tj=125 0C INSTANTANEOUS REVERSE CURRENT. ( A) 4 10 Tj=75 0C 2 4 2 1 0 0 50 100 o 150 CASE TEMPERATURE. ( C) FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 150 0.4 0.2 Tj=25 0C PEAK FORWARD SURGE CURRENT. (A) 125 TJ=125 0C 8.3ms Single Half Sine Wave JEDEC Method 0.1 0 20 40 60 80 100 120 140 100 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) 75 50 400 25 200 0 NUMBER OF CYCLES AT 60Hz 100 FIG.5- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT. (A) 1 2 5 10 20 50 100 FIG.4- TYPICAL JUNCTION CAPACITANCE 120 Tj=25 0C f=1.0MHz Vsig=50mVp-p 40 20 10 100 CAPACITANCE.(pF) 80 4 2 1 60 40 0.4 20 0.2 0.1 0.6 Tj=25oC Pulse Width=300 s 1% Duty Cycle 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.1 0.5 1 5 10 50 100 500 1000 REVERSE VOLTAGE. (V) INSTANTANEOUS FORWARD VOLTAGE. (V) FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A (-) DUT (+) 50Vdc (approx) (-) PULSE GENERATOR (NOTE 2) 1W NON INDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A trr NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm Version: A06