HER1001G_11

HER1001G_11

  • 厂商:

    TSC

  • 封装:

  • 描述:

    HER1001G_11 - 10.0AMPS. Glass Passivated High Efficient Rectifiers - Taiwan Semiconductor Company, L...

  • 数据手册
  • 价格&库存
HER1001G_11 数据手册
CREAT BY ART HER1001G - HER1008G 10.0AMPS. Glass Passivated High Efficient Rectifiers TO-220AB Pb RoHS COMPLIANCE Features Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability For use in low voltage, high frequency inventor, free wheeling, and polarity protection application Green compound with suffix "G" on packing code & prefix "G" on datecode Mechanical Data Case: TO-220AB Molded plastic Epoxy: UL 94V-0 rate flame retardant Terminals: Pure tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed Polarity: As marked High temperature soldering guaranteed: 260 ℃/10s/.16", (4.06mm) from case Weight: 2.24 grams Dimensions in inches and (millimeters) Marking Diagram HER100XG G Y WW = Specific Device Code = Green Compound = Year = Work Week Maximum Ratings and Electrical Characteristics Rating at 25 ℃ ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current, 8.3 ms Single Half Sinewave Superimposed on Rated Load (JEDEC method) Maximum Instantaneous Forward Voltage (Note 1) @5A Maximum DC Reverse Current at Rated DC Blocking Voltage @ T A=25 ℃ @ T A=125 ℃ Symbol VRRM VRMS VDC IF(AV) IFSM VF IR Trr Cj RθJC TJ TSTG HER HER HER HER HER HER HER HER 1001G 1002G 1003G 1004G 1005G 1006G 1007G 1008G 50 100 200 300 400 600 800 1000 35 50 70 100 140 200 210 300 10 125 1.0 10 400 50 60 1.5 - 65 to + 150 - 65 to + 150 80 40 1.3 1.7 280 400 420 600 560 800 700 1000 Units V V V A A V uA uA nS pF O Maximum Reverse Recovery Time (Note 2) Typical Junction Capacitance (Note 3) Typical Thermal Resistance Operating Temperature Range Storage Temperature Range Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle C/W O O C C Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Version:E11 RATINGS AND CHARACTERISTIC CURVES (HER1001G THRU HER1008G) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 12 INSTANTANEOUS REVERSE CURRENT (uA) AVERAGE FORWARD A CURRENT (A) FIG. 2- TYPICAL REVERSE CHARACTERISTICS 1000 10 8 6 4 2 0 0 50 100 o 100 TA=125℃ TA=75℃ 10 150 1 TA=25℃ LEAD TEMPERATURE ( C) 0.1 150 FIG. 3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) PEAK FORWARD SURGE CURRENT (A) 125 100 75 50 25 1 10 NUMBER OF CYCLES AT 60 Hz 100 INSTANTANEOUS FORWARD CURRENT (A) 8.3mS Single Half Sine Wave JEDEC Method FIG. 5- TYPICAL FORWARD CHARACTERISRICS 100 HER1005G 10 HER1001G-HER1004G 1 HER106G-HER108G FIG. 4- TYPICAL JUNCTION CAPACITANCE 240 200 CAPACITANCE (pF) 160 120 80 40 0 1 10 100 1000 REVERSE VOLTAGE (V) 0.1 TA=25℃ PULSE SE WIDTH-300us 1% DUTY CYCLE HER1001G-HER1005G 0.01 HER1006G-HER1008G 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 FORWARD VOLTAGE (V) Version:E11
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