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HER101G

HER101G

  • 厂商:

    TSC

  • 封装:

  • 描述:

    HER101G - 1.0 AMP. Glass Passivated High Efficient Rectifiers - Taiwan Semiconductor Company, Ltd

  • 数据手册
  • 价格&库存
HER101G 数据手册
HER101G - HER108G 1.0 AMP. Glass Passivated High Efficient Rectifiers DO-41 Features G lass passivated chip junction. H igh efficiency, Low VF H igh current capability H igh reliability H igh surge current capability F or use in low voltage, high frequency inventor, free wheeling, and polarity protection application. M echanical Data C ase: Molded plastic DO-41 E poxy: UL 94V0 rate flame retardant L ead: Pure tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed P olarity: Color band denotes cathode H igh temperature soldering guaranteed: 260 oC/10 seconds/.375”,(9.5mm) lead lengths at 5 lbs., (2.3kg) tension W eight: 0.34 gram Dimensions in inches and (millimeters) M aximum Ratings and Electrical Characteristics R ating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% T ype Number M aximum Recurrent Peak Reverse Voltage M aximum RMS Voltage M aximum DC Blocking Voltage M aximum Average Forward Rectified Current .375 (9.5mm) Lead Length o @T A = 5 5 C P eak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) M aximum Instantaneous Forward Voltage @ 1.0A M aximum DC Reverse Current o @T A =25 C at Rated DC Blocking Voltage @ T A =125 oC Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance Typical thermal resistance O perating Temperature Range ( Note 2 ) S ymbol HER V RRM V RMS V DC I(AV) IFSM VF IR T rr Cj R θJA R θJC TJ HER HER HER HER HER HER HER 101G 102G 103G 104G 105G 106G 107G 108G Units V V V A A 50 35 50 100 70 100 200 140 200 300 210 300 1 .0 30 400 280 400 600 420 600 800 1000 560 700 800 1000 1 .0 5 .0 150 50 15 1.3 1.7 V uA uA nS pF o 75 10 70 15 -65 to +150 -65 to +150 C/W o o T STG S torage Temperature Range 1. Reverse Recovery Test Conditions: IF =0.5A, IR =1.0A, IRR =0.25A N otes: 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C. 3. Mount on Cu-Pad Size 5mm x 5mm on P.C.B. C C Version: A06 RATINGS AND CHARACTERISTIC CURVES (HER101G THRU HER108G) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 2.0 FIG.2- TYPICAL REVERSE CHARACTERISTICS 1000 AVERAGE FORWARD CURRENT. (A) INSTANTANEOUS REVERSE CURRENT. ( A) 1.0 Single Phase Half Wave 60Hz Resistive or Inductive Load 0.375" (9.5mm) Lead Length 100 Tj=125 0C 10 Tj=75 0C 0 0 25 50 75 100 125 O 150 175 AMBIENT TEMPERATURE. ( C) 1 FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 40 Tj=25 0C 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) PEAK FORWARD SURGE CURRENT. (A) 35 30 25 20 15 8.3ms Single Half Sine Wave JEDEC Method FIG.5- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 100 10 0 1 2 5 10 20 50 100 NUMBER OF CYCLES AT 60Hz Tj=25 0C INSTANTANEOUS FORWARD CURRENT. (A) 10 FIG.4- TYPICAL JUNCTION CAPACITANCE 70 60 HE 1 R1 05 G JUNCTION CAPACITANCE.(pF) 50 40 30 20 HER101G-HER104G 0.1 HER 106 HER G~H 101G Tj=25 0C ~HE R105 G ER1 08G HER106G-HER108G 10 0 0.1 0.5 1 2 5 10 20 50 100 200 500 800 REVERSE VOLTAGE. (V) 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 FORWARD VOLTAGE. (V) FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 NONINDUCTIVE 10 NONINDUCTIVE +0.5A DUT (-) PULSE GENERATOR (NOTE 2) OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A trr (+) 50Vdc (approx) (-) NON INDUCTIVE NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm Version: A06
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