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HER301G_1

HER301G_1

  • 厂商:

    TSC

  • 封装:

  • 描述:

    HER301G_1 - 3.0 AMPS. Glass Passivated High Efficient Rectifiers - Taiwan Semiconductor Company, Ltd

  • 数据手册
  • 价格&库存
HER301G_1 数据手册
HER301G - HER308G 3.0 AMPS. Glass Passivated High Efficient Rectifiers DO-201AD Features G lass passivated chip junction. H igh efficiency, Low VF H igh current capability H igh reliability H igh surge current capability F or use in low voltage, high frequency inventor, free wheeling, and polarity protection application. M echanical Data C ase: Molded plastic E poxy: UL 94V0 rate flame retardant L ead: Pure tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed P olarity: Color band denotes cathode H igh temperature soldering guaranteed: o 260 C/10 seconds/.375”,(9.5mm) lead lengths at 5 lbs., (2.3kg) tension M ounting position: Any W eight: 1.1 grams Dimensions in inches and (millimeters) R ating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% M aximum Ratings and Electrical Characteristics T ype Number M aximum Recurrent Peak Reverse Voltage M aximum RMS Voltage M aximum DC Blocking Voltage M aximum Average Forward Rectified Current .375 (9.5mm) Lead Length o @T A = 5 5 C P eak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) M aximum Instantaneous Forward Voltage @ 3.0A M aximum DC Reverse Current o @T A =25 C at Rated DC Blocking Voltage o @ T A =125 C M aximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) T ypical Thermal Resistance (Note 3) S ymbol HER HER HER HER HER HER HER HER V RRM V RMS V DC I(AV) IFSM VF IR T rr Cj R θJA R θJL 50 60 35 10 1 .0 50 35 50 100 70 100 200 140 200 300 210 300 400 280 400 600 420 600 301G 302G 303G 304G 305G 306G 307G 308G U nits V V V A 800 1000 560 700 800 1000 3 .0 1 25 1.3 10 200 75 35 o A 1.7 V uA uA nS pF C/W o O perating & Storage Temperature Range T J /T STG -65 to +150 1. Reverse Recovery Test Conditions: IF =0.5A, IR =1.0A, IRR =0.25A N otes: 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C. 3. Mount on Cu-Pad Size 16mm x 16mm on P.C.B C Version: A06 RATINGS AND CHARACTERISTIC CURVES (HER301G THRU HER308G) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 6.0 FIG.2- TYPICAL REVERSE CHARACTERISTICS 1000 AVERAGE FORWARD CURRENT. (A) 5.0 4.0 INSTANTANEOUS REVERSE CURRENT. ( A) Single Phase Half Wave 60Hz Resistive or Inductive Load 0.375" (9.5mm) Lead Length 100 Tj=125 0C 3.0 10 Tj=75 0C 2.0 1.0 1 0 0 25 50 75 100 O 125 150 175 CASE TEMPERATURE. ( C) Tj=25 0C FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 250 0.1 PEAK FORWARD SURGE CURRENT. (A) 200 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) 150 125 100 8.3ms Single Half Sine Wave JEDEC Method FIG.5- TYPICAL FORWARD CHARACTERISTICS 50 100 0 1 10 50 100 1000 NUMBER OF CYCLES AT 60Hz INSTANTANEOUS FORWARD CURRENT. (A) 10 FIG.4- TYPICAL JUNCTION CAPACITANCE 175 150 HE R3 05 G JUNCTION CAPACITANCE.(pF) 125 100 75 50 25 0 0.1 0.5 1 2 5 10 20 50 100 200 500 800 REVERSE VOLTAGE. (V) HE R3 01G 1 HER301G-HER304G ~H ER HE R30 305 0.1 G 6G ~HE HER306G-HER308G R30 8G 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 FORWARD VOLTAGE. (V) FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 NONINDUCTIVE 10 NONINDUCTIVE +0.5A DUT (-) PULSE GENERATOR (NOTE 2) NON INDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A trr (+) 50Vdc (approx) (-) NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm Version: A06
HER301G_1 价格&库存

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