HER507G

HER501G - HER508G 5.0 AMP. Glass Passivated High Efficient Rectifiers DO-201AD Features G lass passivated chip junction. H igh efficiency, Low VF H igh current capability H igh reliability H igh surge current capability F or use in low voltage, high frequency inventor, free wheeling, and polarity protection application. M echanical Data C ases: Molded plastic E poxy: UL 94V0 rate flame retardant L ead: Pure tin plated, lead free, solderable per MIL-STD-202, method 208 guaranteed P olarity: Color band denotes cathode H igh temperature soldering guaranteed: 260 o C/10 seconds/.375”,(9.5mm) lead lengths at 5 lbs., (2.3kg) tension W eight: 1.65grams Dimensions in inches and (millimeters) M aximum Rating and Electrical Characteristics R ating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% T ype Number M aximum Recurrent Peak Reverse Voltage M aximum RMS Voltage M aximum DC Blocking Voltage M aximum Average Forward Rectified Current .375 (9.5mm) lead length @T A = 5 5 o C P eak Forward Surge Current, 8.3 ms single half sine-wave superimposed on rated load (JEDEC method ) M aximum Instantaneous Forward Voltage @5.0A M aximum DC Reverse Current @Ta=25 o C at Rated DC Blocking Voltage @ Ta=125 o C Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance Typical Thermal Resistance O perating Temperature Range S torage Temperature Range ( Note 2 ) S ymbol V RRM V RMD V DC H ER HER HER HER HER HER HER HER 501G 502G 503G 504G 505G 506G 507G 508G U nits V V V A A 50 35 50 100 70 100 200 140 200 300 210 300 400 280 400 600 420 600 800 1000 560 700 800 1000 I(AV) IFSM VF IR T rr Cj R θJA 50 1 00 1 .0 5 .0 2 00 1.3 10 200 75 65 40 - 65 to +150 - 65 to +150 1.7 V uA uA nS pF o C/W o C o C TJ T STG N otes: 1. Reverse Recovery Test Conditions: I F =0.5A, IR =1.0A, IRR =0.25A 2. Measured at 1 MHz and applied reverse voltage of 4.0 V D.C. 3. Mount on Cu-Pad Size 16mm x 16mm on P.C.B. Version: A06 RATINGS AND CHARACTERISTIC CURVES (HER501G THRU HER508G) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 6.0 1000 FIG.2- TYPICAL REVERSE CHARACTERISTICS AVERAGE FORWARD CURRENT. (A) 5.0 INSTANTANEOUS REVERSE CURRENT. ( A) 4.0 100 Tj=125 0C 3.0 Single Phase Half Wave 60Hz Resistive or Inductive Load 0.375" (9.5mm) Lead Length Tj=75 0C 2.0 10 Tj=25 0C 1.0 0 0 25 50 75 100 125 O 150 175 AMBIENT TEMPERATURE. ( C) 1 FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT. (A) 200 8.3ms Single Half Sine Wave JEDEC Method 150 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) 100 FIG.5- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 50 100 0 NUMBER OF CYCLES AT 60Hz INSTANTANEOUS FORWARD CURRENT. (A) 1 10 50 100 1000 10 HER501G-HER504G HE R5 05 FIG.4- TYPICAL JUNCTION CAPACITANCE 175 150 125 100 75 50 25 0 0.1 HE G JUNCTION CAPACITANCE.(pF) HE R5 1 R5 01G ~H ER 06G 505 G G ~H ER 508 0.1 HER506G-HER508G 0.01 0.5 1 2 5 10 20 50 100 200 500 REVERSE VOLTAGE. (V) 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE. (V) FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 NONINDUCTIVE 10 NONINDUCTIVE +0.5A DUT (-) PULSE GENERATOR (NOTE 2) OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A trr (+) 50Vdc (approx) (-) NON INDUCTIVE NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm Version: A06