HER808G

HER808G

  • 厂商:

    TSC

  • 封装:

  • 描述:

    HER808G - 8.0 AMPS. Glass Passivated High Efficient Rectifiers - Taiwan Semiconductor Company, Ltd

  • 详情介绍
  • 数据手册
  • 价格&库存
HER808G 数据手册
HER801G - HER808G 8.0 AMPS. Glass Passivated High Efficient Rectifiers R-6 Features Glass passivated chip junction. H igh efficiency, Low VF H igh current capability H igh reliability H igh surge current capability For use in low voltage, high frequency inventor, free wheeling, and polarity protection application. M echanical Data C ase: Molded plastic Epoxy: UL 94V0 rate flame retardant Lead: Pure tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed Polarity: Color band denotes cathode H igh temperature soldering guaranteed: o 260 C/10 seconds/.375”,(9.5mm) lead lengths at 5 lbs., (2.3kg) tension M ounting position: Any W eight: 1.65 grams Dimensions in inches and (millimeters) M aximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current .375 (9.5mm) Lead Length o @TA = 55 C Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @ 8.0A M aximum DC Reverse Current @TA=25 oC at Rated DC Blocking Voltage @ TA=125 oC Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance Operating Temperature Range ( Note 2 ) Symbol HER HER HER HER HER HER HER HER VRRM VRMS VDC I(AV) IFSM VF IR 1.0 50 35 50 801G 802G 803G 804G 805G 806G 807G 808G Units V V V A 100 200 300 400 600 800 1000 70 140 210 280 420 560 700 100 200 300 400 600 800 1000 8.0 150 1.3 10 400 50 100 -65 to +150 -65 to +150 80 65 1.7 A V uA uA nS pF o C o C Trr Cj TJ Storage Temperature Range TSTG 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Notes: 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C. Version: A06 RATINGS AND CHARACTERISTIC CURVES (HER801G THRU HER808G) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 9.0 FIG.2- TYPICAL REVERSE CHARACTERISTICS 1000 AVERAGE FORWARD CURRENT. (A) 7.5 6.0 4.5 INSTANTANEOUS REVERSE CURRENT. ( A) Single Phase Half Wave 60Hz Resistive or Inductive Load 0.375" (9.5mm) Lead Length 100 Tj=125 0C 10 Tj=75 0C 3.0 1.5 1 Tj=25 0C 0 0 25 50 75 100 O 125 150 175 CASE TEMPERATURE. ( C) FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 225 0.1 PEAK FORWARD SURGE CURRENT. (A) 200 175 150 125 100 75 50 8.3ms Single Half Sine Wave JEDEC Method 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) FIG.5- TYPICAL FORWARD CHARACTERISTICS 100 25 0 1 10 50 100 1000 NUMBER OF CYCLES AT 60Hz INSTANTANEOUS FORWARD CURRENT. (A) 10 HE FIG.4- TYPICAL JUNCTION CAPACITANCE 175 150 R8 05 G JUNCTION CAPACITANCE.(pF) 125 100 1 HER801G-HER804G HE HE R8 01 G~ HE 75 50 25 R8 R8 05 06G G ~H ER 808 G 0.1 HER806G-HER808G 0 0.1 0.5 1 2 5 10 20 50 100 200 500 800 REVERSE VOLTAGE. (V) 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 FORWARD VOLTAGE. (V) FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 NONINDUCTIVE 10 NONINDUCTIVE +0.5A DUT (-) PULSE GENERATOR (NOTE 2) NON INDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A trr (+) 50Vdc (approx) (-) NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm Version: A06
HER808G
1. 物料型号:型号为STM32F103C8T6,是一款基于ARM Cortex-M3内核的32位微控制器。

2. 器件简介:该器件是意法半导体生产的高性能微控制器,具有多种通信接口和外设,适用于多种嵌入式应用。

3. 引脚分配:该芯片共有48个引脚,包括电源引脚、地引脚、I/O引脚等,具体分配需参考芯片手册。

4. 参数特性:主频72MHz,内置64KB Flash和20KB RAM,工作电压2.0V至3.6V,工作温度范围-40至+85摄氏度。

5. 功能详解:包括GPIO、ADC、定时器、通信接口(UART、SPI、I2C)等模块的详细功能描述。

6. 应用信息:适用于工业控制、医疗设备、消费电子等多种应用场景。

7. 封装信息:采用LQFP48封装,尺寸7x7mm。
HER808G 价格&库存

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