HERA801G

HERA801G - HERA808G 8.0 AMPS. Glass Passivated High Efficient Rectifiers TO-220AC .185(4.70) .175(4.44) .412(10.5) MAX .113(2.87) .103(2.62) DIA .154(3.91) .148(3.74) .27(6.86) .23(5.84) .594(15.1) .587(14.9) PIN1 .16(4.06) .14(3.56) .56(14.22) .53(13.46) .037(0.94) .027(0.68) 2 .11(2.79) .10(2.54) .055(1.40) .045(1.14) Features G lass passivated chip junction. H igh efficiency, Low VF H igh current capability H igh reliability H igh surge current capability F or use in low voltage, high frequency inventor, free wheeling, and polarity protection application. M echanical Data C ases: TO-220AC Molded plastic E poxy: UL 94V0 rate flame retardant T erminals: Pure tin plated, lead free solderable per MIL-STD-202, Method 208 guaranteed P olarity: As marked H igh temperature soldering guaranteed: 260 oC/10 seconds .16”,(4.06mm) from case. W eight: 2.24 grams .205(5.20) .195(4.95) .025(0.64) .014(0.35) PIN 1 PIN 2 CASE Dimensions in inches and (millimeters) R ating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% M aximum Rating and Electrical Characteristics T ype Number Maximum Recurrent Peak Reverse Voltage M aximum RMS Voltage M aximum DC Blocking Voltage M aximum Average Forward Rectified Current .375”(9.5mm) Lead Length o @T C = 100 C P eak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) M aximum Instantaneous Forward Voltage @8.0A M aximum DC Reverse Current @T A =25 oC at Rated DC Blocking Voltage o @ T A =125 C M aximum Reverse Recovery Time ( Note 1 ) T ypical Junction Capacitance ( Note 2 ) T ypical Thermal Resistance (Note 3) Operating Temperature Range S ymbol V RRM V RMS V DC I(AV) IFSM VF IR T rr H ERA HERA HERA HERA HERA HERA HERA HERA 801G 802G 803G 804G 805G 806G 807G 808G U nits V V V A 50 35 50 100 70 100 200 140 200 300 210 300 400 280 400 600 420 600 800 1000 560 700 800 1000 8 .0 150 1 .0 1.3 10 400 50 65 2.0 -65 to +150 -65 to +150 80 55 o A 1.7 V uA uA nS pF C/W o o Cj R θJC TJ Storage Temperature Range T STG 1. Reverse Recovery Test Conditions: IF =0.5A, IR =1.0A, IRR =0.25A Notes: 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. 3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate. C C Version: A06 RATINGS AND CHARACTERISTIC CURVES (HERA801G THRU HERA808G) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT. (A) 20 FIG.2- TYPICAL REVERSE CHARACTERISTICS 1000 INSTANTANEOUS REVERSE CURRENT. ( A) 16 12 8 4 0 Tj=125 0C 100 Tj=75 0C 10 0 50 100 o 150 CASE TEMPERATURE. ( C) PEAK FORWARD SURGE CURRENT. (A) FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 150 8.3ms Single Half Sine Wave JEDEC Method 1 Tj=25 0C 120 90 60 30 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) FIG.5- TYPICAL FORWARD CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT. (A) 30 10 HE RA 80 1G ~H ER A8 04 G 0 1 2 5 10 20 50 100 NUMBER OF CYCLES AT 60Hz FIG.4- TYPICAL JUNCTION CAPACITANCE 180 150 3 1 R HE A8 05 G HE RA 80 ~ 6G HE RA 80 8G CAPACITANCE.(pF) 120 90 HE RA 0.3 0.1 80 1G ER 60 HER A8 A8 05 06 G G~ HE 30 RA 80 8G 0 1 2 5 10 20 ~H 0.03 0.01 0.4 50 100 200 500 1000 0.6 REVERSE VOLTAGE. (V) 0.8 1.0 1.2 1.4 FORWARD VOLTAGE. (V) 1.6 1.8 FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 NONINDUCTIVE 10 NONINDUCTIVE trr +0.5A DUT (-) PULSE GENERATOR (NOTE 2) NON INDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A (+) 50Vdc (approx) (-) NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm Version: A06